Vacuum

Temperature and light soaking dependence of the dc electrical conductivity of binary amorphous Sb-Se Films
pp. 367-372(6)
Authors: Fadel M.; Hegab N.A.; Abd El-Wahabb E.

Vacuum pressure thermal thin-film sensor
pp. 373-376(4)
Authors: Berlicki T.M.; Osadnik S.J.; Prociow E.L.

The kinetics of thin film island growth at initial stages
pp. 377-380(4)
Authors: Urbonavicius E.; Petnycyte E.; Galdikas A.

Temperature effects on the depth profiling of alloys
pp. 381-388(8)
Authors: Galdikas A.; Pranevicius L.; Katilius D.; Templier C.; Delafond J.; Desoyer J.C.

The Avrami-Johnson-Mehl model and irradiation induced phase changes in silicon
pp. 389-397(9)
Author: Carter G.

Energy exponents in thermal spike models of interface mixing
pp. 399-403(5)
Author: Carter G.

Mechanical, electrical and optical properties of a-C:H:N films deposited by plasma CVD technique
pp. 405-413(9)
Authors: Chakrabarti K.; Basu M.; Chaudhuri S.; Pal A.K.; Hanzawa H.

Spectroscopic studies in glassy semiconducting Ge_xSe_1-x
pp. 415-419(5)
Authors: Fouad S.S.; Faek S.A.; El-Sayed S.M.

The helicoid multi-groove frictional pump as a direct compressor in the atmosphere under re-examination of the coefficient of the internal viscosity
pp. 421-425(5)
Authors: Valamontes S.E.; Panos C.N.; Valamontes E.S.

Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon
pp. 427-433(7)
Authors: Benkherourou O.; Sahnoune S.; Djabi M.; Deville J.-P.

Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3mbar
pp. 435-440(6)
Authors: Pejovic M.M.; Ristic G.S.; Milosavljevic C.S.; Vukovic P.D.; Karamarkovic J.P.

The effects of vapour incidence on the microstructrure and related properties of condensed GeS₂ thin films
pp. 441-445(5)
Authors: Starbova K.; Mankov V.; Dikova J.; Starbov N.

Optical and electrical properties of vacuum evaporated In doped Se amorphous thin films
pp. 447-450(4)
Authors: Fayek S.A.; Maged A.F.; Balboul M.R.

HREM and nanoindentation studies of BN:C films deposited by reactive sputtering from a B₄C target
pp. 451-457(7)
Authors: Johansson M.P.; Sjostrom H.; Hultman L.

A low-energy ion beam system for studying energetic ion deposition on Silicon surfaces
pp. 459-464(6)
Author: Shoji F.

Influence of the inhomogeneity of a focused photon beam on the stability of the ion current in an ion source with an effusion molecular beam
pp. 465-472(8)
Authors: Michalak L.; Markowski A.; Felinska H.

Properties of multicomponent surface layers produced on steels by modified plasma nitriding processes
pp. 473-479(7)
Authors: Wierzchon T.; Ulbin-Pokorska I.; Sikorski K.; Trojanowski J.