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Publisher: Elsevier

Volume 51, Number 4, 1 December 1998

Fundamentals of plasma and sputtering processes
pp. 475-478(4)
Authors: Kinbara, A.; Kusano, E.; Kondo, I.

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A sputter equipment simulation system for Vlsi device
pp. 479-484(6)
Authors: Ohta, T.; Yamada, H.

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Simulation of particle transport in high pressure sputtering
pp. 485-489(5)
Authors: Nakano, T.; Baba, S.

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A new technique for monitoring the microscopic electronic surface structures of sputtered thin films
pp. 491-496(6)
Authors: Obara, K.; Yiji, P.; Suemoto, Y.; Ogushi, T.; Moller, W.

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Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition
pp. 497-502(6)
Authors: Heinrich, F.; Heinze, D.; Kowalski, T.; Hoffmann, P.; Kopperschmidt, P.

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A role of energetic ions in RF-biased PECVD of TiO2
pp. 503-509(7)
Author: Hoon Lee, Y.

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The application of high density plasma sources for optoelectronic devicefabrication
pp. 511-517(7)
Authors: Humphreys, B.; Govett, M.; Goodyear, A.

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Syntheses and optical properties of low-temperature SiOx and TiOx thin films prepared by plasma enhanced CVD
pp. 525-530(6)
Authors: Song, Y.; Sakurai, T.; Kishimoto, K.; Maruta, K.; Matsumoto, S.; Kikuchi, K.

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Control of Cl2 plasma by electron-beam-excited plasma and poly-Si etching
pp. 531-535(5)
Authors: Mikawa, Y.; Miyano, R.; Inaguma, J.; Shiraki, Y.; Mutsuga, F.; Fujii, M.; Ikezawa, S.

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Magnetic field dependence of AlN film properties in dc planar magnetron sputtering with opposed targets
pp. 549-553(5)
Authors: Tominaga, K.; Ao, T.; Sato, Y.; Mori, I.; Kusaka, K.; Hanabusa, T.

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Shading damage in sputter cleaning using Ar gas plasma
pp. 555-558(4)
Authors: Aoyama, M.; Ito, T.; Inoue, M.; Shioya, Y.

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K-M-S (keep-molecules sputtering) deposition of optical MgF2 thin films
pp. 559-564(6)
Authors: Kawamata, K.; Shouzu, T.; Mitamura, N.

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Compact sputtering apparatus for depositing Co-Cr alloy thin films in magnetic disks
pp. 571-574(4)
Authors: Kitamoto, Y.; Abe, M.; Naoe, M.

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Effects of He on Cu film formation by rf sputtering
pp. 575-582(8)
Authors: Koyanagi, T.; Takao, K.; Fukuma, Y.

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Heteroepitaxial growth of YSZ films on Si(100) substrate by using new metallic mode of reactive sputtering
pp. 583-590(8)
Authors: Hata, T.; Nakano, S.; Masuda, Y.; Sasaki, K.; Haneda, Y.; Wasa, K.

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Crystal growth of epitaxially grown PbTiO3 thin films on miscut SrTiO3 substrate
pp. 591-594(4)
Authors: Wasa, K.; Haneda, Y.; Sato, T.; Adachi, H.; Setsune, K.

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Effects of interface micro structure in crystallization of ZnO thin films prepared by radio frequency sputtering
pp. 601-607(7)
Authors: Yoshino, Y.; Inoue, K.; Takeuchi, M.; Ohwada, K.

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Effect of an interfacial layer on adhesion strength deterioration between a copper thin film and polyimide substrates
pp. 615-618(4)
Authors: Iwamori, S.; Miyashita, T.; Fukuda, S.; Nozaki, S.; Sudoh, K.; Fukuda, N.

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ZnTe epitaxial growth by remote plasma enhanced metal organic chemical vapor deposition
pp. 619-622(4)
Authors: Noda, D.; Aoki, T.; Nakanishi, Y.; Hatanaka, Y.

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Preparation and photocatalysis evaluation of anatase film on Pt-buffered polyimide
pp. 623-627(5)
Authors: Sheng, J.; Shivalingappa, L.; Karasawa, J.; Fukami, T.

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Cathodic arc deposition of titanium nitride coatings on commercial steels
pp. 629-633(5)
Authors: Iqbal, Z.; Rauf, A.; Ali, A.; ul Haq, A.; Khan, A.Q.

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Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films
pp. 635-640(6)
Authors: Lungu, C.P.; Futsuhara, M.; Takai, O.; Braic, M.; Musa, G.

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Manufacture of complex optical multilayer filters using an automated deposition system
pp. 647-654(8)
Authors: Sullivan, B.T.; Dobrowolski, J.A.; Clarke, G.; Akiyama, T.; Osborne, N.; Ranger, M.; Howe, L.; Matsumoto, A.; Song, Y.; Kikuchi, K.

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Mid frequency sputtering with TwinMag(R)-a survey of recent results
pp. 655-659(5)
Authors: Brauer, G.; Ruske, M.; Szczyrbowski, J.; Teschner, G.; Zmelty, A.

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Origin of oxygen in Pb(Zr,Ti)O3 films prepared by metal-oxide combined target
pp. 661-664(4)
Authors: Sasaki, K.; Zhang, W.; Hata, T.

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Proposal of new mixture target for PZT thin films by reactive sputtering
pp. 665-671(7)
Authors: Hata, T.; Kawagoe, S.; Zhang, W.; Sasaki, K.; Yoshioka, Y.

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Physical properties of reactive sputtered tin-nitride thin films
pp. 673-676(4)
Authors: Inoue, Y.; Nomiya, M.; Takai, O.

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Novel facing targets sputtering apparatus with uniform magnetic field and plasma-free substrates
pp. 687-690(4)
Authors: Noda, K.; Hirata, T.; Kawanabe, T.; Naoe, M.

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Structure and properties of CeN thin films deposited in arc discharge
pp. 691-694(4)
Authors: Xiao, S.Q.; Tsuzuki, K.; Lungu, C.P.; Takai

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Development of a locally-electron-heated plasma source for HDP-CVD process
pp. 695-697(3)
Authors: Seki, H.; Ueno, Y.; Ichimura, S.; Takemori, S.; Uchikawa, S.; Murakamia, H.; Okada, S.; Mochizuki, Y.; Setoyama, E.

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The effects of B2 structured underlayers on thin film magnetic recording media
pp. 703-710(8)
Authors: Lee L.-L.; Laughlin, D.E.; Lambeth, D.N.

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Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors
pp. 719-722(4)
Authors: Horio, N.; Hiramatsu, M.; Nawata, M.; Imaeda, K.; Torii, T.

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Sub-quarter micron metallization using ionized metal plasma (IMP) technology
pp. 729-733(5)
Authors: Tanaka, Y.; Xu, Z.; Gopalraja, P.; Forster, J.; Yao, G.; Zhang, H.; Nulman, J.; Chen, F.

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Optimization of sputtering conditions for protective carbon thin films of rigid disks deposited by FTS
pp. 735-740(6)
Authors: Noda, K.; Kawanabe, T.; Hirata, T.; Naoe, M.

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Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane
pp. 747-750(4)
Authors: Aoki, T.; Ogishima, T.; Wrobel, A.M.; Nakanishi, Y.; Hatanaka, Y.

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High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD
pp. 751-755(5)
Authors: Takagi, T.; Takechi, K.; Nakagawa, Y.; Watabe, Y.; Nishida, S.

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Optimization of extrinsic TFT mobility on 550mmx650mm large glass
pp. 757-760(4)
Authors: Takeichi, M.; Takahashi, S.; Kitahara, H.; Wright, S.L.

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Stress reduction of chromium thin films deposited by cluster-type sputtering system for ultra-large-size (550x650mm) substrates
pp. 761-764(4)
Authors: Nakajima; Onisawa; Chahara; Minemura; Kamei, M.; Setoyama, E.

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Two-step-etching process of MoW gate metal on large TFT glass substrates
pp. 765-768(4)
Authors: Okajima, K.; Sato, T.; Dohi, T.; Shibata, M.

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Low temperature polycrystalline silicon thin film transistors
pp. 769-775(7)
Authors: Jang, J.; Ryu, J.I.; Yoon, S.Y.; Lee, K.H.

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Effects of CH4 addition to Ar-O2 discharge gases on resistivity and structure of ITO coatings
pp. 785-789(5)
Authors: Kusano, E.; Kashiwagi, N.; Kobayashi, T.; Nanto, H.; Kondo, I.; Kinbara, A.

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Uniformity improvement in dc magnetron sputtering deposition on a large area substrate
pp. 791-793(3)
Authors: Seino, T.; Kawakubo, Y.; Nakajima, K.; Kamei, M.

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