Vacuum

Properties of PdCu(110) single crystal alloy surfaces: Temperature-induced processes in the surface microstructure
pp. 1405-1411(7)
Author: Loboda-Cackovic J.

Laser beam effects on Cu and Ti in vacuum and in the air
pp. 1413-1417(5)
Authors: Milosavljevic A.; Ljubisavljevic B.; Sreckovic M.; Bojanic S.; Dinulovic M.

Fabrication of Sn_xGe_1-x thin films with non-equilibrium composition
pp. 1419-1422(4)
Authors: Bennett J.C.; Egerton R.F.

Quartz resonator with SnO₂ thin film as acoustic gas-sensor for NH₃
pp. 1423-1425(3)
Authors: Lazarova V.; Spassov L.; Gueorguiev V.; Andreev S.; Manolov E.; Popova L.

Study of hydrogen in hydrogenated Pd/semiconductor device by ERDA
pp. 1427-1429(3)
Authors: Srivastava P.C.; Singh U.P.; Pandey S.P.; Avasthi D.K.

An interpretation of outgassing characteristics of metals
pp. 1431-1436(6)
Authors: Moraw M.; Prasol H.

Defects developed in Ni-coatings deposited by the impulse plasma on metal substrates
pp. 1437-1441(5)
Author: Zdunek K.

Mechanisms of sputtered atoms energy spectra formation during ejection: Computer simulation study for two-component targets
pp. 1443-1451(9)
Authors: Samoilov V.N.; Korsakova O.S.; Tatur A.E.

Composite metal/C:H films prepared by unbalanced magnetron sputtering: Ni/C:H
pp. 1453-1463(11)
Authors: Biederman H.; Hlidek P.; Pesicka J.; Stundzia V.; Slavinska D.; Zemek J.; Kingdon R.J.; Howson R.P.

Modelling of the angular distribution of sputtered particles from roughened elemental and alloy targets
pp. 1465-1472(8)
Authors: Zhenxia W.; Wenmin W.; Wenyun L.; Chuanshan W.

Simulation of silicon dry etching through: A mask in low pressure fluorine-based plasma
pp. 1473-1477(5)
Authors: Knizikevicius R.; Galdikas A.; Grigonis A.; Rutkuniene Z.; Pranevicius L.; Rutknien Z.

Fine structure of scanning field emission microscope (SFEM) image
pp. 1479-1482(4)
Authors: Barwinski B.; Sendecki S.

Low-temperature treatment of Si/SiO₂ structures in an RF hydrogen plasma
pp. 1483-1486(4)
Authors: Szekeres A.; Alexandrova S.

Microstructure and related properties of vapour deposited amorphous Sb₂Se₃ thin films
pp. 1487-1490(4)
Authors: Starbova K.; Dikova J.; Mankov V.; Starbov N.

Tungsten-aluminum brazed material application on to the internal target or radiation absorber in electron storage rings
pp. 1491-1494(4)
Authors: Momose T.; Nishida K.; Hirayama H.; Ishimaru H.; Toga T.

AES analysis of silicon nitride formation by 10 keV N⁺ and N₂⁺ ion implantation
pp. 1495-1499(5)
Authors: Pan J.S.; Wee A.T.S.; Huan C.H.A.; Tan H.S.; Tan K.L.