Publisher: Elsevier

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Volume 47, Number 11, November 1996

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Hydrogen in chemical vapour deposited diamond films
pp. 1259-1264(6)
Authors: Sharda, T.; Misra, D.S.; Avasthi, D.K.

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A study of hydrogen in diamond like carbon films
pp. 1265-1267(3)
Authors: Malhotra, M.; Som, T.; Kulkarni, V.N.; Kumar, S.

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High energy ion beam induced modifications in diamond and diamond like carbon thin films
pp. 1269-1274(6)
Authors: Dilawar, N.; Sah, S.; Mehta, B.R.; vankar, V.D.; Avasthi, D.K.; Mehta, G.K.

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Ion irradiation effects in diamond and diamond like carbon thin films
pp. 1275-1280(6)
Authors: vankar, V.D.; Dilawar, N.

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Low temperature conductivity of irradiated amorphous conducting carbon
pp. 1281-1283(3)
Authors: Sayeed, A.; Meenakshi, V.; Bhattacharya, S.; Subramanyam, S.V.; Kanjilal, D.

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Electronic properties of ion irradiated amorphous carbon films prepared by plasma assisted CVD method
pp. 1285-1288(4)
Authors: Bhattacharyya, S.; Sayeed, A.; Meenakshi, V.; Subramanyam, S.V.; Kanjilal, D.

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Phenomenon of resist debris formation in electron beam lithography and its possible application
pp. 1305-1311(7)
Authors: deshmukh, P.R.; Rangra, K.J.; Singh, M.; Vyas, P.D.; Pal, B.B.

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A systematic method for optimizing the electron beam hardening process
pp. 1317-1324(8)
Authors: Friedel, K.P.; Felba, J.; Wymyslowski, A.; Pobol, I.

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High-temperature-annealing effects on the electrical properties of RF sputtered SnO2 thin films for microelectronic sensors
pp. 1325-1328(4)
Authors: Andreev, S.K.; Popova, L.I.; Gueorguiev, V.K.; Manolov, E.B.

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Influence of vacuum rapid thermal annealing on the properties of Al and Ag films on quartz
pp. 1329-1331(3)
Authors: Lasarova, V.; Beshkov, G.; Spassov, L.

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Dielectric properties of TiO2-films reactively sputtered from Ti in an RF magnetron
pp. 1333-1336(4)
Authors: Alexandrov, P.; Koprinarova, J.; Todorov, D.

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The generation of radioactive ion beams
pp. 1341-1344(4)
Authors: Latuszynski, A.; Maczka, D.; Yushkevich, Y.

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Low-permittivity evaporated polymer-polyimide
pp. 1345-1346(2)
Authors: Spassova, E.; Jivkov, I.; Danev, G.; Dimitrova, T.; Koprinarova, J.; Paskaleva, A.

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A SiCl4 reactive ion etching and laser reflectometry process for AlGaAs/GaAs HBT fabrication
pp. 1347-1351(5)
Authors: Granier, H.; Tasselli, J.; Marty, A.; Hu, H.P.

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Investigation by AES and EELS of ZnO/InP(100) and SnO2/Ag
pp. 1353-1359(7)
Authors: Bouslama, M.; Ghamnia, M.; Jardin, C.; Bouderbala, M.; Gruzza, B.

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Effect of Ga incorporation in polycrystalline CuInSe2 films
pp. 1371-1378(8)
Authors: Chakrabarti, R.; Maity, A.B.; Maiti, B.; Dutta, J.; Chaudhuri, S.; Pal, A.K.

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Effect of vacuum on the mass flow characteristics of a horizontal liquid nitrogen transfer line
pp. 1379-1384(6)
Authors: Chandra, R.; Krishna Murthy, M.V.; Jacob, S.; Kasthurirengan, S.; Karunanithi, R.

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Deposition of composite metal/C:H films - The basic properties of Ag/C:H
pp. 1385-1389(5)
Authors: Biederman, H.; Slavinska, D.; Pesicka, J.; Stundzia, V.; Hlidek, P.

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Distribution of magnetic field in the coaxial accelerator of impulse plasma
pp. 1391-1394(4)
Authors: Zdunek, K.; Karwat, T.

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Unbalanced planar magnetron with continuous control of the operating mode from type I to type II
pp. 1395-1397(3)
Authors: Kourtev, J.; Groudeva-Zotova, S.; Garnev, I.; Orlinov, V.

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