Publisher: Elsevier

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Volume 47, Number 10, October 1996

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Computer simulation of the emission process of some field emission alloy ion sources
pp. 1143-1144(2)
Authors: Georgieva, S.; Vichev, R.; Drandarov, N.

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XRD characterization of thin films with low intensity reflection lines
pp. 1145-1147(3)
Authors: Musil, J.; Bell, A.J.; Cepera, M.

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Interfacial effects in poly (p-phenylene-vinylene)-metal systems
pp. 1153-1158(6)
Authors: Nguyen, T.P.; de Vos, S.

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New nanometer manipulators for surface research
pp. 1163-1166(4)
Authors: Anisimov, V.V.; deulin, E.A.; Khramtsov, S.V.; Mikhailov, V.P.

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Laser heating of a slab with temperature dependent absorptance in relation to the cooling conditions
pp. 1167-1173(7)
Authors: El-Adawi, M.K.; Shalaby, S.A.; Abd El-Naby, M.A.

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CO sensing characteristics of reactively sputtered SnO2 thin films prepared under different oxygen partial pressure values
pp. 1175-1177(3)
Authors: Micocci, G.; Tepore, A.; Serra, A.; Siciliano, P.; Ali-Adib, Z.

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The mechanical and structural properties of Ti films prepared by filtered arc deposition
pp. 1179-1188(10)
Authors: Bendavid, A.; Martin, P.J.; Wielunski, L.; Kinder, T.J.; Smith, G.B.

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Preferential sputtering and oxidation of Nb-Ta single crystals studied by low-energy ion scattering
pp. 1193-1196(4)
Authors: Semenov, V.N.; Glebovsky, V.G.; Brongersma, H.H.

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Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors
pp. 1203-1205(3)
Authors: Gueorguiev, V.; Ivanov, T.; Andreev, S.; Popova, L.

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Homogeneous CVD α-Si:H thin film based position sensitive photodetector
pp. 1207-1209(3)
Authors: Toneva, A.; Mihailova, T.; Sueva, D.; Georgiev, S.

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Holographic investigations of photoinduced changes in PECVD Ge-Se thin films
pp. 1211-1213(3)
Authors: Boev, V.; Mitkova, M.; Sleeckx, E.; Nagels, P.; Markovsky, P.; Zlatanova, K.

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The fabrication of thin GaAs cantilever beams for power sensor microsystem using RIE
pp. 1215-1217(3)
Authors: Hasscik, S.; Kuzmik, J.; Porges, M.; Mozolova, Z.; Lalinsky, T.

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Negative ion beams from a plasma type source with additional surface ionization
pp. 1219-1222(4)
Authors: Latuszynski, A.; Kornarzyndki, K.; Drozdziel, A.; Pyszniak, K.; Maczka, D.

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Properties of amorphous silicon carbide films prepared by PECVD
pp. 1223-1225(3)
Authors: Huran, J.; Hrubcin, L.; Kobzev, A.P.; Liday, J.

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Surface and thin film analysis of CdTe layers for solar cells
pp. 1231-1234(4)
Authors: Stoev, M.D.; Katerski, A.P.; Stefanov, R.

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On the mechanism of bombardment-induced oxygen redistribution at ZrO2 surfaces
pp. 1235-1238(4)
Authors: Miteva, V.A.; Stanchev, A.; Marashev, Y.; Kelly, R.; Licciardello, A.

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The effect of Ca, Sr, and Ba substitutions on the morphology and electrical resistivity of La1-xAxCu0.5Mn0.5O3 thin films
pp. 1239-1242(4)
Authors: Stambolova, I.; Kovacheva, D.; Konstantinov, K.; Donchev, T.

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The effect of surface on pressure
pp. 1243-1243(1)
Author: Lewin, G.

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