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Damage to Si substrates during SiO2 etching: Opportunities of subsequent removal by optimized cleaning procedures

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Document Type: Research Article

DOI: http://dx.doi.org/10.1016/0042-207X(95)00258-8

Affiliations: Institut fur Halbleiterphysik, W-Korsing-Str 2, D-15230 Frankfurt (Oder), Germany

Publication date: May 1, 1996

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