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Publisher: Elsevier

Volume 47, Number 2, February 1996

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Secondary ion emission from silicon under 8 keV O2+ and Ar+ ion bombardment
pp. 119-127(9)
Authors: Huan, C.H.A.; Wee, A.T.S.; Low, H.S.M.; Tan, K.L.

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DC conduction through UHV deposited tellurium films
pp. 129-131(3)
Authors: Swan, R.; Travis, J.R.; Evans, K.; Ray, A.K.

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Anger and energy loss spectroscopy analysis of silicon carbide (SiC) surfaces
pp. 141-143(3)
Authors: Ghamnia, M.; Jardin, C.; Kadri, D.; Bouslama, M.

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Investigation of Se molecular beams used for MBE
pp. 157-165(9)
Authors: Minchev, G.M.; Eddrief, M.; Trendafilov, L.M.; Naradikian, H.M.; Trendafilov, K.L.

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Rotational temperature measurements in hydrogen discharges
pp. 183-186(4)
Authors: Laimer, J.; Huber, F.; Misslinger, G.; Stori, H.

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Plasma polymerized hexamethyldisiloxane: Discharge and film studies
pp. 187-192(6)
Authors: Durrant, S.F.; de Moraes, M.A.B.; Mota, R.P.

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