Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition

Authors: Tsai D.-S.1; Chang T.-C.; Hsin W.-C.; Hamamura H.; Shimogaki Y.

Source: Thin Solid Films, Volume 411, Number 2, 31 May 2002 , pp. 177-184(8)

Publisher: Elsevier

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Keywords: Chemical vapor deposition; Silane; Growth mechanism; Reaction kinetics

Language: English

Document Type: Research article

DOI: 10.1016/S0040-6090(02)00237-7

Affiliations: 1: Department of Chemical Engineering, National Taiwan University of Science and Technology, 106, Taipei, Taiwan, ROC

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