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Volume 411, Number 2, 31 May 2002

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Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition
pp. 177-184(8)
Authors: Tsai D.-S.; Chang T.-C.; Hsin W.-C.; Hamamura H.; Shimogaki Y.

Titanium(IV) oxide thin films obtained by a two-step soft-solution method
pp. 185-191(7)
Authors: Peiro A.M.; Vigil E.; Peral J.; Domingo C.; Domenech X.; Ayllon J.A.

Sol-gel deposition and characterization of In6WO12 thin films
pp. 192-197(6)
Authors: Dabney W.S.; Antolino N.E.; Luisi B.S.; Richard A.P.; Edwards D.D.

Characteristics of transparent and conductive undoped ZnO thin films obtained by chemical spray using zinc pentanedionate
pp. 198-202(5)
Authors: Olvera M.d.l.L.; Maldonado A.; Asomoza R.; Tirado-Guerra S.

Influence of oxygen plasma treatment on the microstructure of SnOx thin films
pp. 203-210(8)
Authors: Jiang J.C.; Lian K.; Meletis E.I.

Patterning of nanometer-scale silicide structures on silicon by 'direct writing focus ion-beam implantation'
pp. 219-224(6)
Authors: Mitan M.M.; Pivin D.P.; Alford T.L.; Mayer J.W.

Microstructural characterization of Fe-N thin films
pp. 225-228(4)
Authors: Zhan Q.; Yu R.; He L.L.; Li D.X.

Thermal evolution of alpha- and beta-phases in the thin GaN on (001) GaAs
pp. 229-233(5)
Authors: Park Y.J.; Koh E.K.; Park C.S.; Park I.-W.; Kim E.K.

X-ray diffraction investigations of structural changes in Co/Cu multilayers at elevated temperatures
pp. 234-239(6)
Authors: Hecker M.; Pitschke W.; Tietjen D.; Schneider C.M.

SIMS characterization of GaAs MIS devices at the interface
pp. 240-246(7)
Authors: Chakraborty B.R.; Dilawar N.; Pal S.; Bose D.N.

Evaluation of interfacial toughness and bond strength of sandwiched silicon structures
pp. 247-255(9)
Authors: Latella B.A.; Nicholls T.W.; Cassidy D.J.; Barbe C.J.; Triani G.

Ion irradiation effects on hardness and elastic modulus in AZ 1350J&unknown; photoresist film
pp. 256-261(6)
Authors: Foerster C.E.; Garcia I.T.S.; Zawislak F.C.; Serbena F.C.; Lepienski C.M.; Schreiner W.H.; Abbate M.

Optical constants of indium tin oxide films as determined by a surface plasmon phase method
pp. 262-267(6)
Authors: Vaicikauskas V.; Bremer J.; Hunderi O.; Antanavicius R.; Januskevicius R.

RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(001) thin films with improved capacitance-voltage characteristics
pp. 268-273(6)
Authors: Wakiya N.; Yoshida M.; Kiguchi T.; Shinozaki K.; Mizutani N.

Sensitivity of SrBi2Ta2O9 capacitors to materials and annealing processes in upper electrode formation
pp. 274-279(6)
Authors: Ohfuji S.-i.; Itsumi M.; Ogawa S.; Shinojima H.

Nano structure analysis of sputtered thin films consisting of cobalt oxide and soda-lime glass composite
pp. 289-297(9)
Authors: Yamamoto H.; Naito T.; Terao M.; Shintani T.

Crystallization process of amorphous silicon-carbon alloys
pp. 298-302(5)
Authors: Calcagno L.; Musumeci P.; Roccaforte F.; Bongiorno C.; Foti G.

Author Index
pp. 303-303(1)

Subject Index
pp. 304-306(3)

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