Thin Solid Films

Preface
pp. v-v(1)

Theoretical study of penetration reaction of fluorine atoms and ions into hydrogen-terminated Si(111) thin film
pp. 143-149(7)
Authors: Makino O.; Sakata K.; Yamazaki H.; Iguchi K.; Tachibana A.

Atomistic simulation of silicon bombardment by energetic CF₃⁺: product distributions and energies
pp. 150-156(7)
Authors: Abrams C.F.; Graves D.B.

Excited atoms in the vicinity of a surface in a barrier discharge measured by evanescent-wave laser spectroscopy
pp. 157-161(5)
Authors: Sakurai T.; Toda M.

Scanning tunneling microscopy of plasma-solid surface interface
pp. 162-166(5)
Authors: Kawasaki H.; Ara K.; Terashima K.

Ion energy distribution at an r.f.-biased electrode in an inductively coupled plasma affected by collisions in a sheath
pp. 167-174(8)
Authors: Mizutani N.; Hayashi T.

Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging
pp. 175-180(6)
Authors: Giapis K.P.; Hwang G.S.

Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO₂ etching
pp. 181-189(9)
Authors: Noda S.; Ozawa N.; Kinoshita T.; Tsuboi H.; Kawashima K.; Hikosaka Y.; Kinoshita K.; Sekine M.

Transport mechanisms of ions and neutrals in low-pressure, high-density plasma etching of high aspect ratio contact holes
pp. 190-207(18)
Authors: Nishikawa K.; Ootera H.; Tomohisa S.; Oomori T.

Dynamics of plasma-surface interactions and feature profile evolution during pulsed plasma etching
pp. 208-216(9)
Authors: Ono K.; Tuda M.

Plasma processed ultra-thin SiO₂ interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics
pp. 217-227(11)
Authors: Lucovsky G.; Yang H.; Wu Y.; Niimi H.

Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching
pp. 228-234(7)
Authors: Ichimori T.; Ikegami N.; Hirashita N.; Kanamori J.

Effects of low-molecular-weight radicals for reduction of microloading in high-aspect contact-hole etching
pp. 235-242(8)
Authors: Samukawa S.; Mukai T.

Difference between C₄F₈ and C₅F₈ plasmas in surface reaction processes for selective etching of SiO₂ over Si₃N₄
pp. 243-248(6)
Authors: Motomura H.; Imai S.-i.; Tachibana K.

Correlation between CF₂ and C_xF_y densities in C₄F₈ plasmas
pp. 249-255(7)
Authors: Sasaki K.; Takizawa K.; Takada N.; Kadota K.

Plasma enhanced chemical vapor deposition of thermally stable and low-dielectric-constant fluorinated amorphous carbon films using low-global-warming-potential gas C₅F₈
pp. 256-261(6)
Authors: Shirafuji T.; Kamisawa A.; Shimasaki T.; Hayashi Y.; Nishino S.

Detection of deposition rate of plasma-polymerized films by quartz crystal microbalance
pp. 262-267(6)
Authors: Kurosawa S.; Hirokawa T.; Kashima K.; Aizawa H.; Han D.-S.; Yoshimi Y.; Okada Y.; Yase K.; Miyake J.; Yoshimoto M.; Hilborn J.

Effect of bias-enhancement in diamond nucleation and growth on nickel
pp. 268-273(6)
Authors: Hayashi Y.; Shiraokawa N.; Nishino S.

a-Si:H film deposition using same phase modulated scanning plasma method
pp. 274-277(4)
Authors: Maemura Y.; Yamaguchi T.; Yang S.-C.; Fujiyama H.

Effects of cross-magnetic field on thin film preparation by pulsed Nd/YAG laser deposition
pp. 278-281(4)
Authors: Kawasaki H.; Doi K.; Hiraishi S.; Suda Y.

Formation and properties of TiC thin films by pulsed Nd/YAG laser deposition
pp. 282-286(5)
Authors: Suda Y.; Kawasaki H.; Doi K.; Hiraishi S.

Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma
pp. 287-290(4)
Authors: Suda Y.; Nishimura T.; Ono T.; Akazawa M.; Sakai Y.; Homma N.

Absolute total and partial cross-sections for the electron impact ionization of TiCl4
pp. 291-297(7)
Authors: Basner R.; Schmidt M.; Becker K.; Tarnovsky V.; Deutsch H.

In situ spectroscopic ellipsometry for plasma-carburising process
pp. 298-302(5)
Authors: Moritani A.; Yamada T.; Kitamura T.; Katayama H.; Noda Y.; Kanayama N.

Radical kinetics for polymer film deposition in fluorocarbon (C₄F₈, C₃F₆ and C₅F₈) plasmas
pp. 303-310(8)
Authors: Takahashi K.; Itoh A.; Nakamura T.; Tachibana K.

SiO₂ etching in inductively coupled C₂F₆ plasmas: surface chemistry and two-dimensional simulations
pp. 311-325(15)
Authors: Feldsien J.; Kim D.; Economou D.J.