Experimental and theoretical studies on N 1s levels of silicon oxynitride films

Authors: Takahashi M.; Mizokuro T.; Nishioka Y.; Kobayashi H.1

Source: Surface Science, Volume 518, Number 1, 10 October 2002 , pp. 72-80(9)

Publisher: Elsevier

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Keywords: Density functional calculations; Photoelectron spectroscopy; X-ray photoelectron spectroscopy; Compound formation; Silicon; Silicon nitride; Silicon oxides; Insulating films

Language: English

Document Type: Research article

DOI: 10.1016/S0039-6028(02)02096-4

Affiliations: 1: Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Corporation, 8-1 Mihogaoka, Ibaraki, 567-0047, Osaka, Japan

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