Publisher: Elsevier

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Volume 337, Number 1, 20 August 1995

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Onset characteristics of secondary electron emission from Si(100) coadsorbed by Cs and Cl
pp. 8-16(9)
Authors: Namiki, A.; Ukai, Y.; Hayashi, H.; Nakamura, T.; Geuzebroek, F.H.

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The geometric structure of intrinsic defects at TiO2(110) surfaces: An STM study
pp. 17-30(14)
Authors: Schierbaum K.-D.; Fischer, S.; Munz, A.W.; Gopel, W.

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Reactivity of CO on a TiO2,(110) defective surface studied by electron stimulated desorption
pp. 31-39(9)
Authors: Lin, T.; Shi, F.; Ding, M.; Lin, T.; Shi, F.; Roman, E.; Torquemada, M.C.; de Segovia, J.L.

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Effect of substituents on the phenyl coupling reaction on Cu(111)
pp. 40-50(11)
Authors: Wertheim, G.K.; Riffe, D.M.; Gellman, A.J.; Meyers, J.M.

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The dynamics of hydrogen dissociation on W(100)-c(2x2)Cu
pp. 67-78(12)
Authors: Pioch, H.; von Schutz, J.; Wolf, H.C.; Butler, D.A.; Hayden, B.E.

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A structural study of Pd/Cu(100) surface alloys
pp. 79-91(13)
Authors: Kurmaev, E.Z.; Fedorenko, V.V.; Elokhina, L.V.; Vinogradova, A.S.; Gao, A.S.; Pope, T.D.; Vos, M.; Tang, H.T.; Griffiths, K.; Mitchell, I.V.; Norton, P.R.; Liu, W.; Li, Y.S.; Mitchell, K.A.R.; Tian, Z.; Black, J.E.

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Structure and phase diagram of tetramethylgermanium adsorbed on graphite (0001) planes
pp. 92-102(11)
Authors: Asmussen, B.; Caliebe, W.; Sussenbach, J.; Press, W.

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Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)
pp. 103-108(6)
Authors: Richter, W.; Rumberg, J.; Zettler, J.; Stahrenberg, K.; Ploska, K.; Daweritz, L.; Schutzendube, P.; Wassermeier, M.

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First-principles pseudopotential calculations of alkali overlayer on GaAs(110)
pp. 109-117(9)
Authors: Liang, B.; Shen, B.; Cheng, Z.; Gong, H.; Zhang, J.; Yan, Q.; Zhan, W.; Wang, X.W.; Ow, K.N.

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Oxygen adsorption on a single-grain, quasicrystal surface
pp. 135-146(12)
Authors: Thiel, P.A.; Chang, S.; Zhang, C.; Jenks, C.J.; Chin, W.B.

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Quasidendritic growth of Co induced by localized reconstruction of Pt(111)
pp. 147-152(6)
Authors: Knian, K.; Fischer, J.E.; Girifalco, L.A.; McGhie, A.R.; Strongin, R.M.; Smith, A.B.I.; Grutter, P.; Durig, U.

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Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals
pp. 153-165(13)
Authors: Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R.

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Influence of H on low temperature Si(111) homoepitaxy
pp. 777-782(6)
Authors: Horn-von Hoegen, M.; Golla, A.

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Atomic-hydrogen-induced restructuring of the Si(100)(2x1)-K surface
pp. 783-788(6)
Authors: Nishijima, M.; Minami, N.; Kubo, T.; Atli, A.; Takagi, N.; Aruga, T.

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Mg-induced Si(111)3x1 structure studied by photoelectron spectroscopy
pp. 789-794(6)
Authors: Park, C.Y.; An, K.S.; Park, R.J.; Kim, J.S.; Kim, C.Y.; Chung, J.W.; Abukawa, T.; Kono, S.; Kinoshita, T.; Kakizaki, A.; Ishii, T.

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Low temperature cleavage luminescence of silicon
pp. 795-799(5)
Authors: Haneman, D.; Kaalund, C.J.; McAlpine, N.S.

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Identification of a surface azide from the reaction of HN3 with C(100)
pp. 807-811(5)
Authors: Russell, J.N.J.; Thoms, B.D.; Russell, J.N.J.

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The preparation and characterization of low surface roughness (111) and (100) natural diamonds by hydrogen plasma
pp. 812-818(7)
Authors: Kuttel, O.M.; Diederich, L.; Schaller, E.; Carnal, O.; Schlapbach, L.

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