Publisher: Elsevier

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Volume 261, Number 1, 15 January 2004

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Editorial Board
pp. ii-ii(1)

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Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth
pp. 30-37(8)
Authors: Coltrin, M.E.; Mitchell, C.C.

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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
pp. 38-43(6)
Authors: Kim, J.S.; Oh, D.K.; Yu, P.W.; Leem, J.Y.; Lee, J.I.; Lee, C.

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Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE
pp. 44-49(6)
Authors: Johnson, M.C.; Jorgenson, R.J.; Wu, J.; Shan, W.; Bourret-Courchesne, E.

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Formation of V-shaped pits in GaN thin films grown on high temperature GaN
pp. 50-54(5)
Authors: Son, K.S.; Kim, D.G.; Cho, H.K.; Lee, K.; Kim, S.; Park, K.

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Spiral growth mechanisms of CMTD crystals
pp. 63-69(7)
Authors: Wang, K.; Sun, D.; Zhang, J.; Yu, W.; Liu, H.; Hu, X.; Guo, S.; Geng, Y.

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Preparation and structure characterization of nanocrystalline BaFeO4
pp. 82-86(5)
Authors: Ni, X.; Ji, M.; Yang, Z.; Zheng H.-G.

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A surface physicochemical rationale for calculus formation in the oral cavity
pp. 87-92(6)
Authors: Busscher, H.J.; White, D.J.; Kamminga-Rasker, H.J.; van der Mei, H.C.

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Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock
pp. 99-104(6)
Authors: Kaskel, S.; Khanna, M.; Zibrowius, B.; Schmidt, H.; Ullner, D.

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Phenomena and mechanisms of mixed crystal formation in solutions II. Mechanism of interface processes
pp. 105-117(13)
Authors: Voloshin, A.E.; Kovalev, S.I.; Rudneva, E.B.; Glikin, A.E.

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Extracting contours of crystals
pp. 122-134(13)
Authors: Singer, H.M.; Bilgram, J.H.

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Phase-field modeling of eutectic solidification
pp. 135-158(24)
Authors: Gyoon Kim, S.; Tae Kim, W.; Suzuki, T.; Ode, M.

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