Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Editorial note
pp. vi-vi(1)
Author: Kuech T.F.

Growth of a new nonlinear optical crystal-BaAlBO₃F₂
pp. 287-290(4)
Authors: Hu Z.-G.; Yoshimura M.; Mori Y.; Sasaki T.

Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals
pp. 291-297(7)
Authors: Zha M.; Zappettini A.; Bissoli F.; Zanotti L.; Corregidor V.; Dieguez E.

Direct observation of sublimation process on a CdTe(111) surface using an ultrafine particle
pp. 298-303(6)
Authors: Tanigaki T.; Kimura Y.; Suzuki H.; Kaito C.

Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition
pp. 304-308(5)
Authors: Lee I.-H.; Lee C.-R.; Shin D.C.; Nam O.; Park Y.

Synthesis of ZnO nanoparticles on Si substrates using a ZnS source
pp. 309-315(7)
Authors: Li Y.J.; Duan R.; Shi P.B.; Qin G.G.

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth
pp. 316-321(6)
Authors: Dong Y.; Okuno Y.L.; Mishra U.K.

Growth of good quality InGaN multiple quantum wells by MOCVD
pp. 322-326(5)
Authors: Viswanath A.K.; Lee J.I.; Kim S.T.; Kim D.

Preparation and characterizations of bulk GaN crystals
pp. 327-330(4)
Authors: Song Y.T.; Chen X.L.; Wang W.J.; Yuan W.X.; Cao Y.G.; Wu X.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate
pp. 331-335(5)
Authors: Wu M.; Zhang B.S.; Chen J.; Liu J.P.; Shen X.M.; Zhao D.G.; Zhang J.C.; Wang J.F.; Li N.; Jin R.Q.; Zhu J.J.; Yang H.

Photocurrent measurements on GaAs_1-xN_x epilayers grown by metalorganic chemical vapor deposition
pp. 336-342(7)
Authors: Kim T.S.; Cuong T.V.; Park C.S.; Park J.Y.; Lee H.J.; Suh E.-K.; Hong C.-H.

Properties of self-assembled InAs quantum dots grown by various growth techniques
pp. 343-347(5)
Authors: Hong S.U.; Kim J.S.; Lee J.H.; Kwack H.S.; Han W.S.; Oh D.K.

Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy
pp. 348-359(12)
Authors: Chandvankar S.S.; Shah A.P.; Bhattacharya A.; Chandrasekaran K.S.; Arora B.M.

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy
pp. 360-365(6)
Authors: Tanaka S.; Honda Y.; Kameshiro N.; Iwasaki R.; Sawaki N.; Tanji T.; Ichihashi M.

Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy
pp. 366-371(6)
Authors: Xie S.Y.; Yoon S.F.; Wang S.Z.; Sun Z.Z.; Chen P.; Chua S.J.

Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations
pp. 372-383(12)
Authors: Nakajima K.; Ujihara T.; Usami N.; Fujiwara K.; Sazaki G.; Shishido T.

Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures
pp. 384-387(4)
Authors: Ito S.; Fujioka H.; Oshima M.

Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
pp. 388-393(6)
Authors: Liu J.P.; Zhang B.S.; Wu M.; Li D.B.; Zhang J.C.; Jin R.Q.; Zhu J.J.; Chen J.; Wang J.F.; Wang Y.T.; Yang H.

Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon
pp. 394-399(6)
Authors: Lee D.Y.; Park J.W.; Leem J.Y.; Kim J.S.; Kang S.K.; Son J.S.; Kang H.B.; Mun Y.H.; Lee D.K.; Kim D.H.; Bae I.H.

Electrical and optical properties of Cd_1-xZn_xS (0=<x=<0.18) grown by chemical bath deposition
pp. 400-409(10)
Authors: Khefacha Z.; Benzarti Z.; Mnari M.; Dachraoui M.

The growth and spectroscopic characteristics of Ca₃Y₂(BO₃)₄:Er³⁺ laser crystal
pp. 410-413(4)
Authors: Tu C.; Wang Y.; You Z.; Li J.; Zhu Z.; Wu B.

Growth of thiourea-doped TGS crystals and their characterisation
pp. 414-421(8)
Authors: Meera K.; Muralidharan R.; Tripathi A.K.; Dhanasekaran R.; Ramasamy P.

Influence of trivalent ions codoping on the Mo:PbWO₄ luminescence properties
pp. 422-426(5)
Authors: Yang C.H.; Li J.L.; Wang B.

Growth of dendritic cobalt nanocrystals at room temperature
pp. 427-434(8)
Authors: Zhu Y.; Zheng H.; Yang Q.; Pan A.; Yang Z.; Qian Y.

Hydrothermal growth of single-crystal CaV₆O₁₆.3H₂O nanoribbons
pp. 435-439(5)
Authors: Kong L.; Shao M.; Xie Q.; Liu J.; Qian Y.

XPS and electroluminescence studies on SrS_1-xSe_x and ZnS_1-xSe_x thin films deposited by atomic layer deposition technique
pp. 440-446(7)
Authors: Ihanus J.; Lambers E.; Holloway P.H.; Ritala M.; Leskela M.

Solvothermal synthesis of K₂V₃O₈ nanorods
pp. 447-450(4)
Authors: Xu H.; He W.; Wang H.; Yan H.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
pp. 451-455(5)
Authors: Song S.-L.; Chen N.-F.; Zhou J.-P.; Li Y.L.; Chai C.-L.; Yang S.-Y.; Liu Z.-K.

Growth and spectral properties of Nd³⁺-doped Sr₃Y(BO₃)₃ crystal
pp. 456-459(4)
Authors: Pan J.; Hu Z.; Lin Z.; Wang G.

Growth and spectral properties of Nd³⁺:LaVO₄ crystal
pp. 460-463(4)
Authors: Zhang L.; Hu Z.; Lin Z.; Wang G.

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
pp. 464-468(5)
Authors: Wang S.; Wang W.; Zhu H.; Zhao L.; Zhang R.; Zhou F.; Shu H.; Wang R.

Microwave-assisted polyol synthesis of nanoscale SnS_x (x=1, 2) flakes
pp. 469-474(6)
Authors: Chen D.; Shen G.; Tang K.; Lei S.; Zheng H.; Qian Y.

Levitation of metallic melt by using the simultaneous imposition of the alternating and the static magnetic fields
pp. 475-485(11)
Authors: Yasuda H.; Ohnaka I.; Ninomiya Y.; Ishii R.; Fujita S.; Kishio K.

The study on properties of Sr²⁺-doped -BBO crystal
pp. 486-489(4)
Authors: Liu J.; He X.; Xu J.; Zhou G.; Zhou S.; Zhao G.; Li S.

Large-scale synthesis of uniform Cu₂O stellar crystals via microwave-assisted route
pp. 490-493(4)
Authors: Wu Z.; Shao M.; Zhang W.; Ni Y.

Fabrication of novel urchin-like architecture and snowflake-like pattern CuS
pp. 494-499(6)
Authors: Zhu L.; Xie Y.; Zheng X.; Liu X.; Zhou G.

Influence of polyethylenimine on the precipitation process of lead sulfate crystals
pp. 500-506(7)
Authors: Katayama A.; Sakuma T.; Hirasawa I.

Combustion synthesis and luminescence properties of Dy³⁺-doped MgO nanocrystals
pp. 507-510(4)
Authors: Gu F.; Wang S.F.; Lu M.K.; Zou W.G.; Zhou G.J.; Xu D.; Yuan D.R.

Crystallization habit of calcium carbonate in the presence of sodium dodecyl sulfate and/or polypyrrolidone
pp. 511-516(6)
Authors: Wei H.; Shen Q.; Zhao Y.; Wang D.; Xu D.

Characterization of tautomeric forms of ranitidine hydrochloride: thermal analysis, solid-state NMR, X-ray
pp. 517-526(10)
Authors: Mirmehrabi M.; Rohani S.; Murthy K.S.K.; Radatus B.

Sonochemical synthesis of taper shaped HgSe nanorods in polyol solvent
pp. 527-531(5)
Authors: Ding T.; Zhang J.-R.; Hong J.-M.; Zhu J.-J.; Chen H.-Y.

Role of pore structure in salt crystallisation in unsaturated porous stone
pp. 532-544(13)
Authors: Benavente D.; del Cura M.A.G.; Garcia-Guinea J.; Sanchez-Moral S.; Ordonez S.

Crystallization habit of calcium carbonate in presence of sodium dodecyl sulfate and/or polypyrrolidone
pp. 545-550(6)
Authors: Wei H.; Shen Q.; Zhao Y.; Wang D.; Xu D.

Preparation of nanoscaled BaTiO₃ powders by DSS method near room temperature under normal pressure
pp. 551-556(6)
Authors: Qi J.; Li L.; Wang Y.; Gui Z.

Microstructure selection map for rapidly solidified Al-rich Al-Ce alloys
pp. 557-565(9)
Authors: Zhang Z.; Wang Y.; Bian X.

AFM investigation of step kinetics and hillock morphology of the {100} face of KDP
pp. 566-579(14)
Authors: Thomas T.N.; Land T.A.; Martin T.; Casey W.H.; DeYoreo J.J.

Development of dendrite array growth during alternately changing solidification condition
pp. 580-589(10)
Author: Ma D.

Detached solidification of InSb on earth
pp. 590-599(10)
Authors: Wang J.; Regel L.L.; Wilcox W.R.

Comments on the article ''Transport properties of Sn-doped InSb thin films and application to Hall element''[J. Crystal Growth 251 (2003) 560]
pp. 600-602(3)
Author: Oszwaldowski M.

Reply to 'Comments on the article ''Transport properties of Sn-doped InSb thin films and application to Hall element [J. Crys Growth 251(2003)560]'' by M. Oszwaldowski [J. Crys Growth 260(2004)600]'
pp. 603-605(3)
Authors: Okamoto A.; Shibasaki I.

Erratum to ''Comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering'' [J. Crystal Growth 253 (2003) 117-128]
pp. 606-606(1)
Authors: Hong R.J.; Jiang X.; Szyszka B.; Sittinger V.; Xu S.H.; Werner W.; Heide G.

Author Index
pp. 607-614(8)

Subject Index
pp. 615-617(3)