Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy
pp. 1-6(6)
Authors: Yamauchi S.; Goto Y.; Hariu T.

Temperature influence on the growth of gallium nitride by HVPE in a mixed H₂/N₂ carrier gas
pp. 7-12(6)
Authors: Trassoudaine A.; Cadoret R.; Gil-Lafon E.

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
pp. 13-17(5)
Authors: Huang J.S.; Chen Z.; Luo X.D.; Xu Z.Y.; Ge W.K.

Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
pp. 18-22(5)
Authors: Borgstrom M.; Deppert K.; Samuelson L.; Seifert W.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
pp. 23-27(5)
Authors: Jiang L.; Lin T.; Wei X.; Wang G.H.; Zhang G.Z.; Zhang H.B.; Ma X.Y.

Three-dimensional oscillatory flow in a thin annular pool of silicon melt
pp. 28-42(15)
Authors: Li Y.-R.; Imaishi N.; Azami T.; Hibiya T.

On the chloride vapor-phase epitaxy growth of GaN and its characterization
pp. 43-49(7)
Authors: Varadarajan E.; Puviarasu P.; Kumar J.; Dhanasekaran R.

Ga_1-xMn_xSb grown on GaSb substrate by liquid phase epitaxy
pp. 50-53(4)
Authors: Chen C.; Chen N.; Liu L.; Li Y.; Wu J.

Resistivity control in unintentionally doped GaN films grown by MOCVD
pp. 54-62(9)
Authors: Wickenden A.E.; Koleske D.D.; Henry R.L.; Twigg M.E.; Fatemi M.

Surfactant-free route to hexagonal CdS nanotubes under ultrasonic irradiation in aqueous solution at room temperature
pp. 63-66(4)
Authors: Shao M.; Wu Z.; Gao F.; Ye Y.; Wei X.

Crystal growth of GaN by ammonothermal method
pp. 67-72(6)
Authors: Yoshikawa A.; Ohshima E.; Fukuda T.; Tsuji H.; Oshima K.

Behaviors of Al_xGa_1-xN (0.5=<x=<1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
pp. 73-78(6)
Authors: Gong J.R.; Huang C.W.; Tseng S.F.; Lin T.Y.; Lin K.M.; Liao W.T.; Tsai Y.L.; Shi B.H.; Wang C.L.

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N₂ and H₂ carrier gas
pp. 79-84(6)
Authors: Liu H.-P.; Tsay J.-D.; Liu W.-Y.; Guo Y.-D.; Hsu J.T.; Chen I.-G.

Room-temperature ferromagnetism of (Ga,Mn)N films: effects of Ga flux and growth temperature
pp. 85-90(6)
Authors: Huh K.-S.; Ham M.-H.; Jeong M.-C.; Myoung J.-M.

Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films
pp. 91-101(11)
Authors: Chen H.; Gullanar M.H.; Shen W.Z.

Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser
pp. 102-108(7)
Authors: Zhang F.; Liu X.; Ni G.; Du Y.

The grain size effect of the Pb(Zr_0.45Ti_0.55)O₃ thin films deposited on LaNiO₃-coated silicon by modified sol-gel process
pp. 109-114(6)
Authors: Hu S.H.; Hu G.J.; Meng X.J.; Wang G.S.; Sun J.L.; Guo S.L.; Chu J.H.; Dai N.

Solvo-thermal synthesis of crystalline dinickel phosphide
pp. 115-117(3)
Authors: Lu B.; Bai Y.-J.; Feng X.; Zhao Y.-R.; Yang J.; Chi J.-R.

The improvement of optical reactivity for TiO₂ thin films by N₂-H₂ plasma surface-treatment
pp. 118-124(7)
Authors: Miao L.; Tanemura S.; Watanabe H.; Mori Y.; Kaneko K.; Toh S.

Epitaxial growth and characterization of ZnGeN₂ by metalorganic vapor phase epitaxy
pp. 125-129(5)
Authors: Misaki T.; Wakahara A.; Okada H.; Yoshida A.

Preparation of large-scale cupric oxide nanowires by thermal evaporation method
pp. 130-135(6)
Authors: Huang L.S.; Yang S.G.; Li T.; Gu B.X.; Du Y.W.; Lu Y.N.; Shi S.Z.

Anomalous temperature dependence of photoluminescence from stoichiometric GD₂O_3-x film
pp. 136-142(7)
Authors: Zhou J.-P.; Chai C.-L.; Yang S.-Y.; Liu Z.-K.; Song S.-L.; Chen N.-F.

Lithium in-diffusion treatment of thick LiNbO₃ crystals by the vapor transport equilibration method
pp. 143-147(5)
Authors: Liang X.A.; Xuewu X.; Tow-Chong C.; Shaoning Y.; Fengliang Y.; Soon T.Y.

Improvement in crystalline quality of Cd_1-xZn_xTe(x=4%) crystals grown in graphite crucible
pp. 148-158(11)
Authors: Garg A.K.; Srivastava M.; Narula R.C.; Bagai R.K.; Kumar V.

Crystal growth and properties of (Lu,Y)₃Al₅O₁₂
pp. 159-165(7)
Authors: Kuwano Y.; Suda K.; Ishizawa N.; Yamada T.

Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method
pp. 166-170(5)
Authors: Ohshima E.; Ogino H.; Niikura I.; Maeda K.; Sato M.; Ito M.; Fukuda T.

Preparation and characterization of Co²⁺-doped Y₃Al₅O₁₂ nano-crystal powders by sol-gel technique
pp. 171-175(5)
Authors: Sun Z.; Yuan D.; Duan X.; Wei X.; Sun H.; Luan C.; Wang Z.; Shi X.; Xu D.; Lv M.

Parameters determining crystallinity in -SiC thin films prepared by catalytic chemical vapor deposition
pp. 176-180(5)
Authors: Zhao Q.; Li J.C.; Zhou H.; Wang H.; Wang B.; Yan H.

Femtosecond laser irradiation on YAG and sapphire crystals
pp. 181-185(5)
Authors: Jiang C.; Zhou G.; Xu J.; Deng P.; Gan F.

Plasma preparation on indium-tin-oxide anode surface for organic light emitting diodes
pp. 186-190(5)
Authors: Lu H.-T.; Yokoyama M.

Microstructure characterisation of ALD-grown epitaxial SnO₂ thin films
pp. 191-200(10)
Authors: Lu J.; Sundqvist J.; Ottosson M.; Tarre A.; Rosental A.; Aarik J.; Harsta A.

Characterization of defects in 3C-silicon carbide crystals
pp. 201-208(8)
Authors: Vetter W.M.; Dudley M.

Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography
pp. 209-216(8)
Authors: Ohno T.; Yamaguchi H.; Kuroda S.; Kojima K.; Suzuki T.; Arai K.

Synthesis of cubic boron nitride from amorphous boron nitride containing oxide impurity using Mg-Al alloy catalyst solvent
pp. 217-222(6)
Authors: Singhal S.K.; Park J.K.

Effect of impurities on crystal growth rate of ammonium pentaborate
pp. 223-231(9)
Authors: Sahin O.; Ozdemir M.; Genli N.

Direct observation of the growth of gibbsite crystals by atomic force microscopy
pp. 232-242(11)
Authors: Freij S.J.; Parkinson G.M.; Reyhani M.M.

Chemical composition of a binary dilute solid solution during growth from its melt: effect of kink kinetics
pp. 243-254(12)
Authors: Kitamura M.; Matsumoto N.

A simple mixed surfactant route for the preparation of noble metal dendrites
pp. 255-262(8)
Authors: Zheng X.; Zhu L.; Wang X.; Yan A.; Xie Y.

Improved radial segregation via the destabilizing vertical Bridgman configuration
pp. 263-276(14)
Authors: Sonda P.; Yeckel A.; Daoutidis P.; Derby J.J.

On astigmatism of multi-beam optical stress sensor mounted at large incident angle
pp. 277-285(9)
Authors: Jiang J.; Hwang H.; Lee H.S.; Kim B.; Bong K.; Yoon E.