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Publisher: Elsevier

Volume 260, Number 1, 2 January 2004

Editorial Board
pp. ii-ii(1)

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Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas
pp. 7-12(6)
Authors: Trassoudaine, A.; Cadoret, R.; Gil-Lafon, E.

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Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
pp. 13-17(5)
Authors: Huang, J.S.; Chen, Z.; Luo, X.D.; Xu, Z.Y.; Ge, W.K.

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Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
pp. 18-22(5)
Authors: Borgstrom, M.; Deppert, K.; Samuelson, L.; Seifert, W.

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Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
pp. 23-27(5)
Authors: Jiang, L.; Lin, T.; Wei, X.; Wang, G.H.; Zhang, G.Z.; Zhang, H.B.; Ma, X.Y.

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Three-dimensional oscillatory flow in a thin annular pool of silicon melt
pp. 28-42(15)
Authors: Li, Y.; Imaishi, N.; Azami, T.; Hibiya, T.

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On the chloride vapor-phase epitaxy growth of GaN and its characterization
pp. 43-49(7)
Authors: Varadarajan, E.; Puviarasu, P.; Kumar, J.; Dhanasekaran, R.

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Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy
pp. 50-53(4)
Authors: Chen, C.; Chen, N.; Liu, L.; Li, Y.; Wu, J.

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Resistivity control in unintentionally doped GaN films grown by MOCVD
pp. 54-62(9)
Authors: Wickenden, A.E.; Koleske, D.D.; Henry, R.L.; Twigg, M.E.; Fatemi, M.

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Crystal growth of GaN by ammonothermal method
pp. 67-72(6)
Authors: Yoshikawa, A.; Ohshima, E.; Fukuda, T.; Tsuji, H.; Oshima, K.

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The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas
pp. 79-84(6)
Authors: Liu H.-P.; Tsay, J.; Liu, W.; Guo, Y.; Hsu, J.T.; Chen, I.

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Room-temperature ferromagnetism of (Ga,Mn)N films: effects of Ga flux and growth temperature
pp. 85-90(6)
Authors: Huh, K.; Ham, M.; Jeong, M.; Myoung J.-M.

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The grain size effect of the Pb(Zr0.45Ti0.55)O3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process
pp. 109-114(6)
Authors: Hu, S.H.; Hu, G.J.; Meng, X.J.; Wang, G.S.; Sun, J.L.; Guo, S.L.; Chu, J.H.; Dai, N.

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Solvo-thermal synthesis of crystalline dinickel phosphide
pp. 115-117(3)
Authors: Lu, B.; Bai Y.-J.; Feng, X.; Zhao, Y.; Yang, J.; Chi, J.

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The improvement of optical reactivity for TiO2 thin films by N2-H2 plasma surface-treatment
pp. 118-124(7)
Authors: Miao, L.; Tanemura, S.; Watanabe, H.; Mori, Y.; Kaneko, K.; Toh, S.

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Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy
pp. 125-129(5)
Authors: Misaki, T.; Wakahara, A.; Okada, H.; Yoshida, A.

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Preparation of large-scale cupric oxide nanowires by thermal evaporation method
pp. 130-135(6)
Authors: Huang, L.S.; Yang, S.G.; Li, T.; Gu, B.X.; Du, Y.W.; Lu, Y.N.; Shi, S.Z.

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Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3-x film
pp. 136-142(7)
Authors: Zhou J.-P.; Chai, C.; Yang, S.; Liu, Z.; Song, S.; Chen, N.

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Lithium in-diffusion treatment of thick LiNbO3 crystals by the vapor transport equilibration method
pp. 143-147(5)
Authors: Liang, X.A.; Xuewu, X.; Tow-Chong, C.; Shaoning, Y.; Fengliang, Y.; Soon, T.Y.

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Improvement in crystalline quality of Cd1-xZnxTe(x=4%) crystals grown in graphite crucible
pp. 148-158(11)
Authors: Garg, A.K.; Srivastava, M.; Narula, R.C.; Bagai, R.K.; Kumar, V.

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Crystal growth and properties of (Lu,Y)3Al5O12
pp. 159-165(7)
Authors: Kuwano, Y.; Suda, K.; Ishizawa, N.; Yamada, T.

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Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method
pp. 166-170(5)
Authors: Ohshima, E.; Ogino, H.; Niikura, I.; Maeda, K.; Sato, M.; Ito, M.; Fukuda, T.

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Preparation and characterization of Co2+-doped Y3Al5O12 nano-crystal powders by sol-gel technique
pp. 171-175(5)
Authors: Sun, Z.; Yuan, D.; Duan, X.; Wei, X.; Sun, H.; Luan, C.; Wang, Z.; Shi, X.; Xu, D.; Lv, M.

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Parameters determining crystallinity in -SiC thin films prepared by catalytic chemical vapor deposition
pp. 176-180(5)
Authors: Zhao, Q.; Li, J.C.; Zhou, H.; Wang, H.; Wang, B.; Yan, H.

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Femtosecond laser irradiation on YAG and sapphire crystals
pp. 181-185(5)
Authors: Jiang, C.; Zhou, G.; Xu, J.; Deng, P.; Gan, F.

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Microstructure characterisation of ALD-grown epitaxial SnO2 thin films
pp. 191-200(10)
Authors: Lu, J.; Sundqvist, J.; Ottosson, M.; Tarre, A.; Rosental, A.; Aarik, J.; Harsta, A.

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Characterization of defects in 3C-silicon carbide crystals
pp. 201-208(8)
Authors: Vetter, W.M.; Dudley, M.

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Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography
pp. 209-216(8)
Authors: Ohno, T.; Yamaguchi, H.; Kuroda, S.; Kojima, K.; Suzuki, T.; Arai, K.

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Effect of impurities on crystal growth rate of ammonium pentaborate
pp. 223-231(9)
Authors: Sahin, O.; Ozdemir, M.; Genli, N.

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Direct observation of the growth of gibbsite crystals by atomic force microscopy
pp. 232-242(11)
Authors: Freij, S.J.; Parkinson, G.M.; Reyhani, M.M.

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A simple mixed surfactant route for the preparation of noble metal dendrites
pp. 255-262(8)
Authors: Zheng, X.; Zhu, L.; Wang, X.; Yan, A.; Xie, Y.

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Improved radial segregation via the destabilizing vertical Bridgman configuration
pp. 263-276(14)
Authors: Sonda, P.; Yeckel, A.; Daoutidis, P.; Derby, J.J.

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On astigmatism of multi-beam optical stress sensor mounted at large incident angle
pp. 277-285(9)
Authors: Jiang, J.; Hwang, H.; Lee, H.S.; Kim, B.; Bong, K.; Yoon, E.

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