Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

The effect of annealing on the structure of CdTe films electro-deposited on metallic substrates
pp. 215-222(8)
Authors: Enriquez J.P.; Mathew X.

Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition
pp. 223-231(9)
Authors: Geisz J.F.; Reedy R.C.; Keyes B.M.; Metzger W.K.

Microstructural evolution of Ge/Si(100) nanoscale islands
pp. 232-244(13)
Authors: Smith D.J.; Chandrasekhar D.; Chaparro S.A.; Crozier P.A.; Drucker J.; Floyd M.; McCartney M.R.; Zhang Y.

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
pp. 245-251(7)
Authors: Liu Y.; Egawa T.; Ishikawa H.; Jimbo T.

Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer
pp. 252-256(5)
Authors: Kim J.S.; Lee J.H.; Hong S.U.; Han W.S.; Kwack H.-S.; Lee C.W.; Oh D.K.

Deep hole trap levels of Sb-doped ZnSe grown by MOVPE
pp. 257-261(5)
Authors: Ido T.; Goto H.

Quadruples of Ge dots grown on patterned Si surfaces
pp. 262-266(5)
Authors: Borgstrom M.; Zela V.; Seifert W.

Analysis of Mg-related emissions in p-GaN grown by MOCVD
pp. 267-272(6)
Authors: Jeong T.S.; Youn C.J.; Han M.S.; Yang J.W.; Lim K.Y.

New methods for fabricating patterned lithium niobate for photonic applications
pp. 273-278(6)
Authors: Joshkin V.; Dovidenko K.; Oktyabrsky S.; Saulys D.; Kuech T.; McCaughan L.

p-Type ZnO thin films prepared by oxidation of Zn₃N₂ thin films deposited by DC magnetron sputtering
pp. 279-281(3)
Authors: Wang C.; Ji Z.; Liu K.; Xiang Y.; Ye Z.

Fabrication and characterization of indium-doped p-type SnO₂ thin films
pp. 282-285(4)
Authors: Ji Z.; He Z.; Song Y.; Liu K.; Ye Z.

Optical gain in self-assembled ZnO microcrysallite thin films
pp. 286-290(5)
Authors: Zhang X.Q.; Tang Z.K.; Kawasaki M.; Ohtomo A.; Koinuma H.

Large-scale synthesis and photoluminescence of single-crystalline -Ga₂O₃ nanobelts
pp. 291-295(5)
Authors: Geng B.; Zhang L.; Meng G.; Xie T.; Peng X.; Lin Y.

Growth and characterization of KNbO₃ by vertical Bridgman method
pp. 296-301(6)
Authors: Takagi T.; Fujii T.; Sakabe Y.

Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer
pp. 302-308(7)
Authors: Nakao W.; Fukuyama H.

Competing growth centers and step bunching in KDP crystal growth from solutions
pp. 309-320(12)
Authors: Bredikhin V.I.; Galushkina G.L.; Kulagin A.A.; Kuznetsov S.P.; Malshakova O.A.

Growth and characterization of L-arginine acetate single crystals: a new NLO material
pp. 321-325(5)
Authors: Muralidharan R.; Mohankumar R.; Jayavel R.; Ramasamy P.