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Volume 259, Number 1, November 2003

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Editorial Board
pp. ii-ii(1)

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
pp. 1-7(7)
Authors: Zhiyuan D.; Youwen Z.; Yiping Z.; Manlong D.; Wenrong S.; Jinghua J.; Lanying L.

Origin of room temperature ferromagnetism in homogeneous (In,Mn)As thin films
pp. 8-11(4)
Authors: Blattner A.J.; Prabhumirashi P.L.; Dravid V.P.; Wessels B.W.

Epitaxial growth of tungsten carbide films using C60 as carbon precursor
pp. 12-17(6)
Authors: Palmquist J.-P.; Czigany Z.; Hultman L.; Jansson U.

Nitrogen doping of polycrystalline 3C-SiC films grown using 1,3-disilabutane in a conventional LPCVD reactor
pp. 18-25(8)
Authors: Wijesundara M.B.J.; Gao D.; Carraro C.; Howe R.T.; Maboudian R.

Structural properties of GaN grown on LiGaO2 by PLD
pp. 36-39(4)
Authors: Takahashi H.; Fujioka H.; Ohta J.; Oshima M.; Kimura M.

Initial growth behavior of Cu(In,Ga)Se2 on molybdenum substrates
pp. 47-51(5)
Authors: Schlenker T.; Schock H.W.; Werner J.H.

Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum
pp. 61-68(8)
Authors: Oyama Y.; Ohno T.; Suto K.; Nishizawa J.-i.

Indium surface segregation in AlSb and GaSb
pp. 69-78(10)
Authors: Renard C.; Marcadet X.; Massies J.; Prevot I.; Bisaro R.; Galtier P.

Nucleation and grain growth of SrBi2Nb2O9 thin films
pp. 79-84(6)
Authors: Yoo D.C.; Lee J.Y.; Kim I.S.; Kim Y.T.

Growth conditions and characterization of Bi2Sr2CaCu2O8+delta single crystals
pp. 85-89(5)
Authors: Funabiki H.; Okanoue K.; Takano C.; Hamasaki K.

Fabrication of Pb(Zr,Ti)O3 films on epitaxial gamma-Al2O3(001)/Si(001) substrates
pp. 90-94(5)
Authors: Akai D.; Sawada K.; Ishida M.

Photoluminescence behavior of ZnGa2O4-xSex:Mn2+ thin film phosphors
pp. 95-102(8)
Authors: Yi S.S.; Bae J.S.; Shim K.S.; Jeong J.H.; Park H.L.; Holloway P.H.

Crystal chemistry of epitaxial ZnO on (111) MgAl2O4 produced by hydrothermal synthesis
pp. 103-109(7)
Authors: Andeen D.; Loeffler L.; Padture N.; Lange F.F.

MnSb/porous silicon hybrid structure prepared by physical vapor deposition
pp. 110-114(5)
Authors: Xiu H.; Chen N.; Peng C.

Growth of high-quality betaII-Li3VO4 single crystals by the Czochralski method
pp. 115-120(6)
Authors: Kim D.J.; Hwang Y.-H.; Kim H.K.; Kim J.N.; Kasuga Y.; Ohshima K.-i.

Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition
pp. 130-136(7)
Authors: Liu Z.F.; Shan F.K.; Li Y.X.; Shin B.C.; Yu Y.S.

Dielectric properties of Co-doped Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition
pp. 137-143(7)
Authors: Wang S.Y.; Cheng B.L.; Wang C.; Lu H.B.; Zhou Y.L.; Chen Z.H.; Yang G.Z.

Large-scale synthesis of ultra-long wire-like single-crystal selenium arrays
pp. 144-148(5)
Authors: Liu X.-Y.; Mo M.-S.; Zeng J.-H.; Qian Y.-T.

Growth kinetics and H-shaped crystals of SAPO-40
pp. 160-164(5)
Authors: Di Renzo F.; Dumont N.; Trens P.; Gabelica Z.

Fe2O3 single crystals: hydrothermal growth, crystal chemistry and growth morphology
pp. 165-178(14)
Authors: Demianets L.N.; Pouchko S.V.; Gaynutdinov R.V.

Contact nucleation of steps: theory and Monte Carlo simulation
pp. 190-207(18)
Author: van Enckevort W.J.P.

Synthesis of yttrium hydroxide and oxide nanotubes
pp. 208-214(7)
Authors: Tang Q.; Liu Z.; Li S.; Zhang S.; Liu X.; Qian Y.T.

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