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Publisher: Elsevier

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Volume 258, Number 1, October 2003

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Editorial Board
pp. ii-ii(1)

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Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
pp. 1-13(13)
Authors: Pimpinelli, A.; Cadoret, R.; Gil-Lafon, E.; Napierala, J.; Trassoudaine, A.

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Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy
pp. 14-25(12)
Authors: Gil-Lafon, E.; Napierala, J.; Pimpinelli, A.; Cadoret, R.; Trassoudaine, A.; Castelluci, D.

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Overgrowth on InP corrugations for 1.55m DFB LDs by reduction of carrier gas flow in LPMOCVD
pp. 26-33(8)
Authors: Park, S.W.; Moon, C.K.; Kang, J.H.; Kim, Y.K.; Hwang, E.H.; Koo, B.J.; Kim, D.Y.; Song, J.I.

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Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
pp. 34-40(7)
Authors: Zhang, B.S.; Wu, M.; Shen, X.M.; Chen, J.; Zhu, J.J.; Liu, J.P.; Feng, G.; Zhao, D.G.; Wang, Y.T.; Yang, H.

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Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
pp. 41-48(8)
Authors: Oyama, Y.; Kochiya, T.; Suto, K.; Nishizawa, J.

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Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A10.2Ga0.8N buffer layers
pp. 75-83(9)
Authors: Preble, E.A.; Miraglia, P.Q.; Roskowski, A.M.; Vetter, W.M.; Dudley, M.; Davis, R.F.

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Critical layer thickness enhancement of InAs overgrowth on porous GaAs
pp. 84-88(5)
Authors: Beji, L.; Ismail, B.; Sfaxi, L.; Hassen, F.; Maaref, H.; Ben Ouada, H.

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Effect of anneal temperature on GaN nucleation layer transformation
pp. 89-99(11)
Authors: Lada, M.; Cullis, A.G.; Parbrook, P.J.

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Solvothermal synthesis of Sb2S3 nanowires on a large scale
pp. 106-112(7)
Authors: Hu, H.; Mo, M.; Yang, B.; Zhang, X.; Li, Q.; Yu, W.; Qian, Y.

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Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates
pp. 113-122(10)
Authors: Nishio, J.; Hasegawa, M.; Kojima, K.; Ohno, T.; Ishida, Y.; Takahashi, T.; Suzuki, T.; Tanaka, T.; Arai, K.

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High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD
pp. 130-134(5)
Authors: Zhao, B.; Yang, H.; Du, G.; Miao, G.; Zhang, Y.; Gao, Z.; Yang, T.; Wang, J.; Li, W.; Ma, Y.; Yang, X.; Liu, B.; Liu, D.; Fang, X.

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Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor
pp. 135-140(6)
Authors: Bayaz, A.A.; Giani, A.; Khalfioui, M.A.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

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Annealing studies on CBD grown CdS thin films
pp. 141-148(8)
Authors: Metin, H.; Esen, R.

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Prismatic faces of KDP crystal, kinetic and mechanism of growth from solutions
pp. 149-157(9)
Authors: Alexandru, H.V.; Antohe, S.

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Effects of organic additives on hydrothermal zirconia nanocrystallites
pp. 158-162(5)
Authors: Jiao, X.; Chen, D.; Xiao, L.

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Photochemical synthesis of Au and Ag nanowires on a porous aluminum oxide template
pp. 176-180(5)
Authors: Zhao, W.; Zhu, J.; Chen H.-Y.

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Modeling of ammonothermal growth of nitrides
pp. 181-187(7)
Authors: Chen Q.-S.; Prasad, V.; Hu, W.R.

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Growth of cubic crystals of cobalt-hexacyanoferrate under the octadecyl amine monolayer
pp. 197-203(7)
Authors: Choudhury, S.; Dey, G.K.; Yakhmi, J.V.

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Dependence of growth rate on initial crystal size
pp. 204-210(7)
Authors: Zekic, A.A.; Mitrovic, M.M.

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Vibroconvective mixing applied to vertical Bridgman growth
pp. 211-222(12)
Authors: Zawilski, K.T.; Claudia, M.; Custodio, C.; DeMattei, R.C.; Feigelson, R.S.

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