Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
pp. 1-13(13)
Authors: Pimpinelli A.; Cadoret R.; Gil-Lafon E.; Napierala J.; Trassoudaine A.

Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy
pp. 14-25(12)
Authors: Gil-Lafon E.; Napierala J.; Pimpinelli A.; Cadoret R.; Trassoudaine A.; Castelluci D.

Overgrowth on InP corrugations for 1.55m DFB LDs by reduction of carrier gas flow in LPMOCVD
pp. 26-33(8)
Authors: Park S.W.; Moon C.K.; Kang J.H.; Kim Y.K.; Hwang E.H.; Koo B.J.; Kim D.Y.; Song J.I.

Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
pp. 34-40(7)
Authors: Zhang B.S.; Wu M.; Shen X.M.; Chen J.; Zhu J.J.; Liu J.P.; Feng G.; Zhao D.G.; Wang Y.T.; Yang H.

Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
pp. 41-48(8)
Authors: Oyama Y.; Kochiya T.; Suto K.; Nishizawa J.-I.

A one-dimensional model to predict the growth conditions of In_xGa_1-xAs alloy crystals grown by the traveling liquidus-zone method
pp. 49-57(9)
Authors: Nakamura H.; Hanaue Y.; Kato H.; Kinoshita K.; Yoda S.

Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding
pp. 58-64(7)
Authors: Taishi T.; Huang X.; Yonenaga I.; Hoshikawa K.

Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy
pp. 65-74(10)
Authors: Dwikusuma F.; Mayer J.; Kuech T.F.

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A1_0.2Ga_0.8N buffer layers
pp. 75-83(9)
Authors: Preble E.A.; Miraglia P.Q.; Roskowski A.M.; Vetter W.M.; Dudley M.; Davis R.F.

Critical layer thickness enhancement of InAs overgrowth on porous GaAs
pp. 84-88(5)
Authors: Beji L.; Ismail B.; Sfaxi L.; Hassen F.; Maaref H.; Ben Ouada H.

Effect of anneal temperature on GaN nucleation layer transformation
pp. 89-99(11)
Authors: Lada M.; Cullis A.G.; Parbrook P.J.

Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal
pp. 100-105(6)
Authors: Li H.Q.; Chen X.L.; Ni D.Q.; Wu X.

Solvothermal synthesis of Sb₂S₃ nanowires on a large scale
pp. 106-112(7)
Authors: Hu H.; Mo M.; Yang B.; Zhang X.; Li Q.; Yu W.; Qian Y.

Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates
pp. 113-122(10)
Authors: Nishio J.; Hasegawa M.; Kojima K.; Ohno T.; Ishida Y.; Takahashi T.; Suzuki T.; Tanaka T.; Arai K.

Studies on single- and multi-layer InAsN quantum dots grown by solid source molecular beam epitaxy
pp. 123-129(7)
Authors: Zhongzhe S.; Yoon S.F.; Chuin Y.K.

High-quality ZnO/GaN/Al₂O₃ heteroepitaxial structure grown by LP-MOCVD
pp. 130-134(5)
Authors: Zhao B.; Yang H.; Du G.; Miao G.; Zhang Y.; Gao Z.; Yang T.; Wang J.; Li W.; Ma Y.; Yang X.; Liu B.; Liu D.; Fang X.

Growth parameters effect on the thermoelectric characteristics of Bi₂Se₃ thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor
pp. 135-140(6)
Authors: Bayaz A.A.; Giani A.; Khalfioui M.A.; Foucaran A.; Pascal-Delannoy F.; Boyer A.

Annealing studies on CBD grown CdS thin films
pp. 141-148(8)
Authors: Metin H.; Esen R.

Prismatic faces of KDP crystal, kinetic and mechanism of growth from solutions
pp. 149-157(9)
Authors: Alexandru H.V.; Antohe S.

Effects of organic additives on hydrothermal zirconia nanocrystallites
pp. 158-162(5)
Authors: Jiao X.; Chen D.; Xiao L.

Influence of magnetic field on the morphology of the andrographolide crystal from supercritical carbon dioxide extraction-crystallization
pp. 163-167(5)
Authors: Chen K.; Zhang X.; Pan J.; Zhang W.; Yong J.; Yin W.

Explaining the formation of thin ice crystal plates with structure-dependent attachment kinetics
pp. 168-175(8)
Author: Libbrecht K.G.

Photochemical synthesis of Au and Ag nanowires on a porous aluminum oxide template
pp. 176-180(5)
Authors: Zhao W.-B.; Zhu J.-J.; Chen H.-Y.

Modeling of ammonothermal growth of nitrides
pp. 181-187(7)
Authors: Chen Q.-S.; Prasad V.; Hu W.R.

Morphological instabilities during growth of a rough interface: AFM observations of cobbles on the (0001) face of synthetic quartz crystals
pp. 188-196(9)
Authors: Kawasaki M.; Onuma K.; Sunagawa I.

Growth of cubic crystals of cobalt-hexacyanoferrate under the octadecyl amine monolayer
pp. 197-203(7)
Authors: Choudhury S.; Dey G.K.; Yakhmi J.V.

Dependence of growth rate on initial crystal size
pp. 204-210(7)
Authors: Zekic A.A.; Mitrovic M.M.

Vibroconvective mixing applied to vertical Bridgman growth
pp. 211-222(12)
Authors: Zawilski K.T.; Claudia M.; Custodio C.; DeMattei R.C.; Feigelson R.S.

Corrigendum to: ''A phase field model with electric current'' - [J.Crystal Growth 247(2003)587-596]
pp. 223-223(1)
Author: Brush L.N.