Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
pp. 1-6(6)
Authors: Paskova T.; Darakchieva V.; Valcheva E.; Paskov P.P.; Monemar B.; Heuken M.

Physical modelling of the melt flow during large-diameter silicon single crystal growth
pp. 7-18(12)
Authors: Gorbunov L.; Pedchenko A.; Feodorov A.; Tomzig E.; Virbulis J.; Ammon W.V.

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
pp. 19-30(12)
Authors: Hartmann J.M.; Abbadie A.; Vinet M.; Clavelier L.; Holliger P.; Lafond D.; Semeria M.N.; Gentile P.

Model of the temperature field in tube furnaces and its application to a system of ''contactless'' crystal growth from the vapour
pp. 31-41(11)
Author: Szczerbakow A.

Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers
pp. 42-50(9)
Authors: Hoffmann G.; Schimper H.J.; Schwender C.; Herhammer N.; West G.F.; Vogelgesang B.; Drumm J.O.; Fouckhardt H.; Scheib M.

Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
pp. 51-59(9)
Authors: Gendry M.; Hollinger G.

Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
pp. 60-68(9)
Authors: Mora-Sero I.; Polop C.; Ocal C.; Aguilo M.; Munoz-Sanjose V.

H₂-assisted control growth of Si nanowires
pp. 69-74(6)
Authors: Yan X.Q.; Liu D.F.; Ci L.J.; Wang J.X.; Zhou Z.P.; Yuan H.J.; Song L.; Gao Y.; Liu L.F.; Zhou W.Y.; Wang G.; Xie S.S.

Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport
pp. 75-83(9)
Authors: Rost H.-J.; Doerschel J.; Irmscher K.; Schulz D.; Siche D.

Preparation and luminescent characteristics of Mn²⁺, Er³⁺ co-doped ZrO₂ nanocrystals
pp. 84-88(5)
Authors: Wang S.F.; Gu F.; Lu M.K.; Zhou G.J.; Ai Z.P.; Xu D.; Yuan D.R.

Using As/P exchange processes to modify InAs/InP quantum dots
pp. 89-96(8)
Authors: Poole P.J.; Williams R.L.; Lefebvre J.; Moisa S.

Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor
pp. 97-103(7)
Authors: Kim T.Y.; Lee S.H.; Mo Y.H.; Shim H.W.; Nahm K.S.; Suh E.-K.; Yang J.W.; Lim K.Y.; Park G.S.

Formation of InAs islands on InP(311)B surface by molecular beam epitaxy
pp. 104-109(6)
Authors: Paranthoen C.; Bertru N.; Platz C.; Caroff P.; Dehaese O.; Folliot H.; Le Corre A.; Loualiche S.

Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport
pp. 110-115(6)
Authors: Li H.; Jie W.

In situ monitoring of parasitic growth on the quartz top plate during the MOVPE growth of GaAs/AlGaAs structures
pp. 116-122(7)
Authors: Weeks K.J.; Irvine S.J.C.; Bland S.W.

Low-temperature growth of aluminum nitride on sapphire substrates
pp. 123-128(6)
Authors: Guo Q.X.; Yahata K.; Tanaka T.; Nishio M.; Ogawa H.

Processing conditions of heavily Pb doped superconducting (Bi, Pb)₂Sr₂Ca₂Cu₃O_y thin films
pp. 129-135(7)
Authors: Guldeste A.; Goringe M.J.

Growth and properties of organic nonlinear optical crystals: l-tartaric acid-nicotinamide and d-tartaric acid-nicotinamide
pp. 136-140(5)
Authors: Shen J.; Zheng J.; Che Y.; Xi B.

Crystal growth and spectroscopic properties of Er:La₃Ga₅SiO₁₄ single crystals
pp. 141-145(5)
Authors: Wang Z.; Yuan D.; Shi X.; Cheng X.; Xu D.; Lv M.; Pan L.; Guo S.

Growth and structure of SrAl_0.5Ta_0.5O₃:LaAlO₃ solid solutions single crystals
pp. 146-152(7)
Authors: Berkowski M.; Fink-Finowicki J.; Diduszko R.; Byszewski P.; Aleksiyko R.; Kikalejshvili-Domukhovska R.

RF-plasma enhanced CVD of TiSi₂ thin films: effects of TiCl₄ flow rate and RF power
pp. 153-160(8)
Authors: Fouad O.A.; Uddin N.M.; Yamazato M.; Nagano M.

Growth and optical properties of Zn:KLN single crystal
pp. 161-164(4)
Authors: Yang C.H.; Guo Y.J.; Li J.L.; Wang B.

Optical properties of a new nonlinear borate crystal LiRbB₄O₇
pp. 165-168(4)
Authors: Komatsu R.; Ono Y.; Kajitani T.; Rotermund F.; Petrov V.

Growth of Cu-doped Li₂B₄O₇ single crystals by vertical Bridgman method and their characterization
pp. 169-176(8)
Authors: Ishii M.; Kuwano Y.; Asai T.; Senguttuvan N.; Hayashi T.; Kobayashi M.; Oku T.; Sakai K.; Adachi T.; Shimizu H.M.; Suzuki J.

Anti-solvent crystallization and transformation of thiazole-derivative polymorphs-I: effect of addition rate and initial concentrations
pp. 177-184(8)
Authors: Kitamura M.; Sugimoto M.

Study of segregation coefficient of Mn(II) impurity in ammonium oxalate monohydrate crystals and the relationship between segregation coefficient and growth kinetics
pp. 185-198(14)
Authors: Sangwal K.; Mielniczek-Brzoska E.

Visualization of return flow structure in mixed convection of gas over a heated circular plate in a horizontal flat duct
pp. 199-211(13)
Authors: Tuh J.L.; Lin T.F.

PbTe/CdTe single quantum wells grown on GaAs (100) substrates by molecular beam epitaxy
pp. 212-217(6)
Authors: Koike K.; Honden T.; Makabe I.; Yan F.P.; Yano M.