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Publisher: Elsevier

Volume 257, Number 1, September 2003

Editorial Board
pp. ii-ii(1)

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In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
pp. 1-6(6)
Authors: Paskova, T.; Darakchieva, V.; Valcheva, E.; Paskov, P.P.; Monemar, B.; Heuken, M.

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Physical modelling of the melt flow during large-diameter silicon single crystal growth
pp. 7-18(12)
Authors: Gorbunov, L.; Pedchenko, A.; Feodorov, A.; Tomzig, E.; Virbulis, J.; Ammon, W.V.

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Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
pp. 19-30(12)
Authors: Hartmann, J.M.; Abbadie, A.; Vinet, M.; Clavelier, L.; Holliger, P.; Lafond, D.; Semeria, M.N.; Gentile, P.

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Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers
pp. 42-50(9)
Authors: Hoffmann, G.; Schimper, H.J.; Schwender, C.; Herhammer, N.; West, G.F.; Vogelgesang, B.; Drumm, J.O.; Fouckhardt, H.; Scheib, M.

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Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
pp. 60-68(9)
Authors: Mora-Sero, I.; Polop, C.; Ocal, C.; Aguilo, M.; Munoz-Sanjose, V.

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H2-assisted control growth of Si nanowires
pp. 69-74(6)
Authors: Yan, X.Q.; Liu, D.F.; Ci, L.J.; Wang, J.X.; Zhou, Z.P.; Yuan, H.J.; Song, L.; Gao, Y.; Liu, L.F.; Zhou, W.Y.; Wang, G.; Xie, S.S.

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Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport
pp. 75-83(9)
Authors: Rost H.-J.; Doerschel, J.; Irmscher, K.; Schulz, D.; Siche, D.

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Preparation and luminescent characteristics of Mn2+, Er3+ co-doped ZrO2 nanocrystals
pp. 84-88(5)
Authors: Wang, S.F.; Gu, F.; Lu, M.K.; Zhou, G.J.; Ai, Z.P.; Xu, D.; Yuan, D.R.

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Using As/P exchange processes to modify InAs/InP quantum dots
pp. 89-96(8)
Authors: Poole, P.J.; Williams, R.L.; Lefebvre, J.; Moisa, S.

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Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor
pp. 97-103(7)
Authors: Kim, T.Y.; Lee, S.H.; Mo, Y.H.; Shim, H.W.; Nahm, K.S.; Suh, E.; Yang, J.W.; Lim, K.Y.; Park, G.S.

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Formation of InAs islands on InP(311)B surface by molecular beam epitaxy
pp. 104-109(6)
Authors: Paranthoen, C.; Bertru, N.; Platz, C.; Caroff, P.; Dehaese, O.; Folliot, H.; Le Corre, A.; Loualiche, S.

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Low-temperature growth of aluminum nitride on sapphire substrates
pp. 123-128(6)
Authors: Guo, Q.X.; Yahata, K.; Tanaka, T.; Nishio, M.; Ogawa, H.

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Crystal growth and spectroscopic properties of Er:La3Ga5SiO14 single crystals
pp. 141-145(5)
Authors: Wang, Z.; Yuan, D.; Shi, X.; Cheng, X.; Xu, D.; Lv, M.; Pan, L.; Guo, S.

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Growth and structure of SrAl0.5Ta0.5O3:LaAlO3 solid solutions single crystals
pp. 146-152(7)
Authors: Berkowski, M.; Fink-Finowicki, J.; Diduszko, R.; Byszewski, P.; Aleksiyko, R.; Kikalejshvili-Domukhovska, R.

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RF-plasma enhanced CVD of TiSi2 thin films: effects of TiCl4 flow rate and RF power
pp. 153-160(8)
Authors: Fouad, O.A.; Uddin, N.M.; Yamazato, M.; Nagano, M.

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Growth and optical properties of Zn:KLN single crystal
pp. 161-164(4)
Authors: Yang, C.H.; Guo, Y.J.; Li, J.L.; Wang, B.

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Optical properties of a new nonlinear borate crystal LiRbB4O7
pp. 165-168(4)
Authors: Komatsu, R.; Ono, Y.; Kajitani, T.; Rotermund, F.; Petrov, V.

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Growth of Cu-doped Li2B4O7 single crystals by vertical Bridgman method and their characterization
pp. 169-176(8)
Authors: Ishii, M.; Kuwano, Y.; Asai, T.; Senguttuvan, N.; Hayashi, T.; Kobayashi, M.; Oku, T.; Sakai, K.; Adachi, T.; Shimizu, H.M.; Suzuki, J.

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PbTe/CdTe single quantum wells grown on GaAs (100) substrates by molecular beam epitaxy
pp. 212-217(6)
Authors: Koike, K.; Honden, T.; Makabe, I.; Yan, F.P.; Yano, M.

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