Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Growth of LiNbO₃ crystals by the Bridgman method
pp. 219-222(4)
Authors: Chen H.; Xia H.; Wang J.; Zhang J.; Xu J.; Fan S.

Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy
pp. 223-229(7)
Authors: Dong Y.; Scott D.W.; Wei Y.; Gossard A.C.; Rodwell M.J.

Optical study of interactions of hydrogen with dislocations in CdTe
pp. 230-236(7)
Authors: Guergouri K.; Brihi N.; Marfaing Y.; Triboulet R.

Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates
pp. 237-242(6)
Authors: Novikov S.V.; Zhao L.X.; Winser A.J.; Kappers M.J.; Barnard J.S.; Harrison I.; Humphreys C.J.; Foxon C.T.

Defect filtration of hollow pyramidal structured GaSb epilayers grown on GaSb patterned substrates by liquid phase epitaxy
pp. 243-247(5)
Authors: Zhang G.; Balakrishnan K.; Koyama T.; Kumagawa M.; Hayakawa Y.

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
pp. 248-253(6)
Authors: Chen J.; Zhang S.M.; Zhang B.S.; Zhu J.J.; Shen X.M.; Feng G.; Liu J.P.; Wang Y.T.; Yang H.; Zheng W.C.

Effect of phosphorus doping on the structural properties in nc-Si:H thin films
pp. 254-260(7)
Authors: Gullanar M.H.; Zhang Y.H.; Chen H.; Wei W.S.; Xu G.Y.; Wang T.M.; Cui R.Q.; Shen W.Z.

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon
pp. 261-265(5)
Authors: Yang D.; Li C.; Luo M.; Xu J.; Que D.

Point defects in CdTe
pp. 266-275(10)
Authors: Yujie L.; Guoli M.; Wanqi J.

Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers
pp. 276-282(7)
Authors: Jacobson H.; Yakimova R.; Syvajarvi M.; Kakanakova-Georgieva A.; Tuomi T.; Janzen E.

Epitaxial growth of platinum thin films on various substrates by facing-target sputtering technique
pp. 283-287(5)
Authors: Zhao K.; Wong H.K.

Synthesis of high thermal conductivity nano-scale aluminum nitride by a new carbothermal reduction method from combustion precursor
pp. 288-291(4)
Authors: Kuang J.; Zhang C.; Zhou X.; Wang S.

Growth of new laser crystal Nd:LuVO₄ by the Czochralski method
pp. 292-297(6)
Authors: Zhang H.; Kong H.; Zhao S.; Jiu J.; Wang J.; Wang Z.; Gao L.; Du C.; Hu X.; Xu X.; Shao Z.; Jiang M.

Growth and characterization of Yb³⁺-doped YAlO₃ fiber single crystals grown by the modified micro-pulling-down method
pp. 298-304(7)
Authors: Shim J.B.; Yoshikawa A.; Nikl M.; Solovieva N.; Pejchal J.; Yoon D.H.; Fukuda T.

Structural and luminescent properties of green emitting SrGa₂S₄:Eu thin films prepared by RF-sputtering
pp. 305-316(12)
Authors: Chartier C.; Barthou C.; Benalloul P.; Chenot S.; Frigerio J.M.

Dynamic behavior of SiO- and SiO₂-coated ZnO ultrafine particles and growth mechanism of Zn₂SiO₄ crystal
pp. 317-323(7)
Authors: Tanigaki T.; Suzuki H.; Kimura Y.; Kido O.; Saito Y.; Kaito C.

Growth and optical properties of Ho,Yb:YAl₃(BO₃)₄ crystal
pp. 324-327(4)
Authors: Li J.; Wang J.; Tan H.; Cheng X.; Song F.; Zhang H.; Zhao S.

Growth and spectrum properties of Yb:GdVO₄ single crystal
pp. 328-333(6)
Authors: Hu X.; Chen J.; Zhuang N.; Chen J.; Lan J.; Yang F.

New form of the Cs₂O-B₂O₃ phase diagram
pp. 334-340(7)
Authors: Penin N.; Touboul M.; Nowogrocki G.

Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions
pp. 341-346(6)
Authors: Nakamura S.; Kimoto T.; Matsunami H.

Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps
pp. 347-351(5)
Authors: Nakamura S.; Kimoto T.; Matsunami H.

In situ observation of growth interfaces by ultrasound
pp. 352-360(9)
Authors: Dold P.; Heidler M.; Drevermann A.; Zimmermann G.

Features of beryllium aluminate crystal growth by the method of horizontally oriented crystallization
pp. 361-367(7)
Authors: Gurov V.V.; Tsvetkov E.G.; Kirdyashkin A.G.

Preparation and characterization of ternary Cu-Sn-E (E=S, Se) semiconductor nanocrystallites via a solvothermal element reaction route
pp. 368-376(9)
Authors: Chen X.; Wang X.; An C.; Liu J.; Qian Y.

Growth of single-crystal Sb₂S₃ nanorods, dendrites and straw-tied-like architectures via a precursor-solvothermal-pyrolysis route
pp. 377-382(6)
Authors: Mo M.; Zhu Z.; Yang X.; Liu X.; Zhang S.; Gao J.; Qian Y.

Growth of high-quality and large-sized -BaB₂O₄ crystal
pp. 383-386(4)
Authors: Chen W.; Jiang A.; Wang G.

Growth of 4,4'-dihydroxyazobenzene (DHAB) and its characterization
pp. 387-392(6)
Authors: Ramesh Babu R.; Kumaresan S.; Vijayan N.; Gunasekaran M.; Gopalakrishnan R.; Kannan P.; Ramasamy P.

Release control of industrial biocide (CMI) using clathrate crystal with TEP
pp. 393-400(8)
Authors: Kitamura M.; Fujimoto M.

The overgrowth of vaterite on functionalized styrene-butadiene copolymer
pp. 401-406(6)
Authors: Dalas E.; Koklas S.N.

Transversal growth microstructures of quasicrystalline Ti-Zr-Ni films
pp. 407-415(9)
Authors: Brien V.; Dauscher A.; Weisbecker P.; Ghanbaja J.; Machizaud F.

Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
pp. 416-423(8)
Authors: Hu G.Q.; Kong X.; Wan L.; Wang Y.Q.; Duan X.F.; Lu Y.; Liu X.L.

Author Index
pp. 425-430(6)

Subject Index
pp. 431-432(2)