Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition
pp. 213-219(7)
Authors: El-Emawy A.A.; Birudavolu S.; Huang S.; Xu H.; Huffaker D.L.

The influence of Al_xGa_1-xN intermediate buffer layer on the characteristics of GaN/Si(111) epitaxy
pp. 220-226(7)
Authors: Jang S.-H.; Lee S.-S.; Lee O.-Y.; Lee C.-R.

Modelling of phase boundaries for large industrial FZ silicon crystal growth with the needle-eye technique
pp. 227-240(14)
Authors: Ratnieks G.; Muiznieks A.; Muhlbauer A.

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
pp. 241-249(9)
Authors: Hageman P.R.; Kirilyuk V.; Corbeek W.H.M.; Weyher J.L.; Lucznik B.; Bockowski M.; Porowski S.; Muller S.

Influence of carrier and doping gases on silicon quantum dots nucleation
pp. 250-257(8)
Authors: Mazen F.; Baron T.; Hartmann J.M.; Bremond G.; Semeria M.N.

Origin of photoluminescence of GaAsN/GaN(001) layers grown by plasma-assisted solid source molecular beam epitaxy
pp. 258-265(8)
Authors: Wang S.Z.; Yoon S.F.; Loke W.K.; Liu C.Y.; Yuan S.

Formation of quantum wires and quantum dots on buffer layers grown on InP substrates
pp. 266-272(7)
Authors: Stintz A.; Rotter T.J.; Malloy K.J.

Large band gap bowing of MBE-grown GeC/Si(001) layers
pp. 273-276(4)
Authors: Okinaka M.; Miyatake K.; Ohta J.; Nunoshita M.

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
pp. 277-281(5)
Authors: Martinez-Criado G.; Kuball M.; Benyoucef M.; Sarua A.; Frayssinet E.; Beaumont B.; Gibart P.; Miskys C.R.; Stutzmann M.

Production of nanodiamond from carbon film containing silicon
pp. 282-285(4)
Authors: Kimura Y.; Kaito C.

Effect of steady ampoule rotation on axial segregation in vertical Bridgman growth of Terfenol-D
pp. 286-292(7)
Authors: Kim J.C.; Park W.J.; Lee Z.H.; Ye B.J.

Epitaxial growth of NH₃-doped ZnO thin films on <0224> oriented sapphire substrates
pp. 293-297(5)
Authors: Wang J.; Du G.; Zhao B.; Yang X.; Zhang Y.; Ma Y.; Liu D.; Chang Y.; Wang H.; Yang H.; Yang S.

Effects of calcium on the phase transition and the dielectric properties of Sm-modified PbTiO₃ ceramics
pp. 298-302(5)
Authors: Dai S.B.; Juang Y.D.; Hwang J.S.; Chen D.E.; Chu S.Y.

Effect of the oxygen partial pressure on the properties of ZnO thin films grown by metalorganic vapor phase epitaxy
pp. 303-307(5)
Authors: Ma Y.; Du G.T.; Yang T.P.; Qiu D.L.; Zhang X.; Yang H.J.; Zhang Y.T.; Zhao B.J.; Yang X.T.; Liu D.L.

A novel wet chemical route to NiO nanowires
pp. 308-312(5)
Authors: Xu C.; Hong K.; Liu S.; Wang G.; Zhao X.

Structure and optical spectrum of ZnO nanoparticles produced in RF plasma
pp. 313-316(4)
Authors: Sato T.; Tanigaki T.; Suzuki H.; Saito Y.; Kido O.; Kimura Y.; Kaito C.; Takeda A.; Kaneko S.

A novel method for the synthesis of nano-sized BaAl₂O₄ with thermal stability
pp. 317-323(7)
Authors: Zhang C.; Wang L.; Cui L.; Zhu Y.

Pulsed laser deposition and refractive index measurement of fully substituted bismuth iron garnet films
pp. 324-331(8)
Authors: Tepper T.; Ross C.A.

Growth and optical properties of colloidal ZnS nanoparticles
pp. 332-337(6)
Authors: Wageh S.; Ling Z.S.; Xu-Rong X.

Distribution of ytterbium in Yb:YAG crystals and lattice parameters of the crystals
pp. 338-341(4)
Authors: Xu X.; Zhao Z.; Xu J.; Deng P.

Growth of crystalline Sb₂S₃ nanorods by hydrothermal method
pp. 342-347(6)
Authors: Li C.; Yang X.; Liu Y.; Zhao Z.; Qian Y.

Growth and optical properties of Eu³⁺-doped La₃Ga₅SiO₁₄ single crystal
pp. 348-352(5)
Authors: Wang Z.; Yuan D.; Xu D.; Lv M.; Cheng X.; Pan L.; Shi X.

Fabrication and characterization of Mn-doped zinc silicate films on silicon wafer
pp. 353-356(4)
Authors: Ji Z.; Kun L.; Yongliang S.; Zhizhen Y.

Preparation and luminescence characteristics of nanocrystalline SnO₂ particles doped with Dy³⁺
pp. 357-360(4)
Authors: Gu F.; Fen Wang S.F.; Lu M.K.; Xin Qi Y.X.; Jun Zhou G.J.; Xu D.; Rong Yuan D.R.

Growth and characterization of nonlinear optical crystal: L-histidinium bromide
pp. 361-368(8)
Authors: Rajendran K.V.; Jayaraman D.; Jayavel R.; Ramasamy P.

Stability characteristics of the mush affected by the solid layer below
pp. 369-378(10)
Authors: Chang M.H.; Chen F.

In situ observation of the crystallization via incongruent melting and peritectic reaction in Sr(NO₃)-H₂O system
pp. 379-385(7)
Authors: Maiwa K.; Nakamura H.; Kimura H.; Miyazaki A.

Growth kinetics of primary and secondary solid phases in Sr(NO₃)-H₂O peritectic system
pp. 386-391(6)
Authors: Maiwa K.; Nakamura H.; Kimura H.; Miyazaki A.

Nephrocalcin isoforms coat crystal surfaces and differentially affect calcium oxalate monohydrate crystal morphology, growth, and aggregation
pp. 392-402(11)
Authors: Kurutz J.W.; Carvalho M.; Nakagawa Y.

X-ray topography of microgravity-grown ribonuclease S crystals
pp. 403-413(11)
Authors: Travis Gallagher D.; Stover C.; Charlton D.; Arnowitz L.; Black D.R.

Well-aligned carbon nanotube array grown on Si-based nanoscale SiO₂ islands
pp. 414-418(5)
Authors: Mei Y.F.; Wu X.L.; Li X.F.; Bao X.M.; Wang X.Z.; Hu Z.; Siu G.G.

Corrigendum to ''desorption process of GaAs surface native oxide controlled by direct Ga beam irradiation'' - [J. Crystal Growth 251(2003)40-45]
pp. 419-419(1)
Authors: Asaoka Y.; Kanebishi T.; Sano N.; Kaneko T.

Author Index
pp. 421-425(5)

Subject Index
pp. 427-428(2)