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Publisher: Elsevier

Volume 255, Number 1, July 2003

Editorial Board
pp. ii-ii(1)

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Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3m photo-detection
pp. 8-18(11)
Authors: Masarotto, L.; Hartmann, J.M.; Bremond, G.; Rolland, G.; Papon, A.M.; Semeria, M.N.

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Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers
pp. 19-26(8)
Authors: Valcheva, E.; Paskova, T.; Monemar, B.

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Role of Marangoni convection in Si-Czochralski melts-Part II: 3D predictions with crystal rotation
pp. 27-39(13)
Authors: Kumar, V.; Basu, B.; Enger, S.; Brenner, G.; Durst, F.

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GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
pp. 52-56(5)
Authors: Chen, D.J.; Shen, B.; Bi, Z.X.; Zhang, K.X.; Gu, S.L.; Zhang, R.; Shi, Y.; Zheng, Y.D.; Sun, X.H.; Wan, S.K.; Wang, Z.G.

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Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dots
pp. 57-62(6)
Authors: Kim, J.S.; Lee, J.H.; Hong, S.U.; Han, W.S.; Kwack, H.; Oh, D.K.

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Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction
pp. 63-67(5)
Authors: Zheng, X.H.; Chen, H.; Yan, Z.B.; Han, Y.J.; Yu, H.B.; Li, D.S.; Huang, Q.; Zhou, J.M.

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Global analysis of a small Czochralski furnace with rotating crystal and crucible
pp. 81-92(12)
Authors: Li, Y.; Akiyama, Y.; Imaishi, N.; Tsukada, T.

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Field electron emission of diamond films grown on the ultrasonically scratched and nano-seeded Si substrates
pp. 102-106(5)
Authors: Jiang, N.; Nishimura, K.; Shintani, Y.; Hiraki, A.

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Effects of two-stage deposition on the structure and properties of heteroepitaxial BaTiO3 thin films
pp. 107-113(7)
Authors: Towner, D.J.; Ni, J.; Marks, T.J.; Wessels, B.W.

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Zinc sulfide nanocrystals on carbon nanotubes
pp. 114-118(5)
Authors: Kim, H.; Sigmund, W.

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Czochralski crystal growth and properties of Na5[B2P3O13]
pp. 119-122(4)
Authors: Li, Z.; Wu, Y.; Fu, P.; Pan, S.; Lin, Z.; Chen, C.

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Behavior of trench surface by H2 annealing for reliable trench gate oxide
pp. 123-129(7)
Authors: Kim S.-G.; Roh, T.M.; Kim, J.; Park, I.Y.; Lee, J.W.; Koo, J.G.; Bae, I.; Cho, K.I.

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Properties of RF magnetron sputtered zinc oxide thin films
pp. 130-135(6)
Authors: Ondo-Ndong, R.; Ferblantier, G.; Al Kalfioui, M.; Boyer, A.; Foucaran, A.

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Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
pp. 136-144(9)
Authors: Fujihira, K.; Kimoto, T.; Matsunami, H.

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Oriented growth of Ta2O5 films induced by substrate bias
pp. 145-149(5)
Authors: Huang, A.P.; Xu, S.L.; Zhu, M.K.; Li, G.H.; Liu, T.; Wang, B.; Yan, H.

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Phenomena and mechanisms of mixed crystal formation in solutions I. General concept on the example of the system KHC8H4O4-RbHC8H4O4-H2O
pp. 150-162(13)
Authors: Glikin, A.E.; Kovalev, S.I.; Rudneva, E.B.; Kryuchkova, L.Y.; Voloshin, A.E.

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The overgrowth of hydroxyapatite on new functionalized polymers
pp. 163-169(7)
Authors: Dalas, E.; Chrissanthopoulos, A.

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Transverse solidification textures in hexagonal close-packed alloys
pp. 204-211(8)
Authors: Bergman, M.I.; Agrawal, S.; Carter, M.; Macleod-Silberstein, M.

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