Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Stoichiometry, morphology and structure of CdS layers grown on InP(100) from atomic sulfur beam generated from H₂S gas and thermally evaporated Cd using molecular beam epitaxy
pp. 1-7(7)
Authors: Choi J.W.; Bhupathiraju A.; Hasan M.-A.; Lannon J.M.

Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3m photo-detection
pp. 8-18(11)
Authors: Masarotto L.; Hartmann J.M.; Bremond G.; Rolland G.; Papon A.M.; Semeria M.N.

Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers
pp. 19-26(8)
Authors: Valcheva E.; Paskova T.; Monemar B.

Role of Marangoni convection in Si-Czochralski melts-Part II: 3D predictions with crystal rotation
pp. 27-39(13)
Authors: Kumar V.; Basu B.; Enger S.; Brenner G.; Durst F.

Comparison between numerical simulation and experimental measurement of solute segregation during directional solidification
pp. 40-51(12)
Authors: Stelian C.; Duffar T.; Nicoara I.

GaN_1-xP_x ternary alloys with high P composition grown by metal-organic chemical vapor deposition
pp. 52-56(5)
Authors: Chen D.J.; Shen B.; Bi Z.X.; Zhang K.X.; Gu S.L.; Zhang R.; Shi Y.; Zheng Y.D.; Sun X.H.; Wan S.K.; Wang Z.G.

Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dots
pp. 57-62(6)
Authors: Kim J.S.; Lee J.H.; Hong S.U.; Han W.S.; Kwack H.-S.; Oh D.K.

Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction
pp. 63-67(5)
Authors: Zheng X.H.; Chen H.; Yan Z.B.; Han Y.J.; Yu H.B.; Li D.S.; Huang Q.; Zhou J.M.

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering
pp. 68-80(13)
Authors: Ledentsov N.N.; Bimberg D.

Global analysis of a small Czochralski furnace with rotating crystal and crucible
pp. 81-92(12)
Authors: Li Y.-R.; Akiyama Y.; Imaishi N.; Tsukada T.

High-resolution transmission electron microscopy study of interface structure and strain in epitaxial -FeSi₂ on Si (111) substrate
pp. 93-101(9)
Authors: Han M.; Tanaka M.; Takeguchi M.; Zhang Q.; Furuya K.

Field electron emission of diamond films grown on the ultrasonically scratched and nano-seeded Si substrates
pp. 102-106(5)
Authors: Jiang N.; Nishimura K.; Shintani Y.; Hiraki A.

Effects of two-stage deposition on the structure and properties of heteroepitaxial BaTiO₃ thin films
pp. 107-113(7)
Authors: Towner D.J.; Ni J.; Marks T.J.; Wessels B.W.

Zinc sulfide nanocrystals on carbon nanotubes
pp. 114-118(5)
Authors: Kim H.; Sigmund W.

Czochralski crystal growth and properties of Na₅[B₂P₃O₁₃]
pp. 119-122(4)
Authors: Li Z.; Wu Y.; Fu P.; Pan S.; Lin Z.; Chen C.

Behavior of trench surface by H₂ annealing for reliable trench gate oxide
pp. 123-129(7)
Authors: Kim S.-G.; Roh T.M.; Kim J.; Park I.Y.; Lee J.W.; Koo J.G.; Bae I.-H.; Cho K.I.

Properties of RF magnetron sputtered zinc oxide thin films
pp. 130-135(6)
Authors: Ondo-Ndong R.; Ferblantier G.; Al Kalfioui M.; Boyer A.; Foucaran A.

Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
pp. 136-144(9)
Authors: Fujihira K.; Kimoto T.; Matsunami H.

Oriented growth of Ta₂O₅ films induced by substrate bias
pp. 145-149(5)
Authors: Huang A.P.; Xu S.L.; Zhu M.K.; Li G.H.; Liu T.; Wang B.; Yan H.

Phenomena and mechanisms of mixed crystal formation in solutions I. General concept on the example of the system KHC₈H₄O₄-RbHC₈H₄O₄-H₂O
pp. 150-162(13)
Authors: Glikin A.E.; Kovalev S.I.; Rudneva E.B.; Kryuchkova L.Y.; Voloshin A.E.

The overgrowth of hydroxyapatite on new functionalized polymers
pp. 163-169(7)
Authors: Dalas E.; Chrissanthopoulos A.

Determination of growth angles, wetting angles, interfacial tensions and capillary constant values of melts
pp. 170-189(20)
Author: Satunkin G.A.

Effect of growth rate and composition on the primary spacing, the dendrite tip radius and mushy zone depth in the directionally solidified succinonitrile-Salol alloys
pp. 190-203(14)
Authors: Cadirli E.; Karaca I.; Kaya H.; Marasli N.

Transverse solidification textures in hexagonal close-packed alloys
pp. 204-211(8)
Authors: Bergman M.I.; Agrawal S.; Carter M.; Macleod-Silberstein M.

Corrigendum to ''History dependence of primary dendrite spacing during directional solidification of binary metallic alloys and interdendritic convection'' [J. Crystal Growth 253 (2003) 413-423]
pp. 212-212(1)
Authors: Hui J.; Chen Y.S.; Wu X.; Tewari S.N.