Journal of Crystal Growth logo Elsevier logo

Publisher: Elsevier

Volume 254, Number 3, July 2003
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Editorial Board
pp. ii-ii(1)

The Marangoni convection and the oxygen concentration in Czochralski-grown silicon
pp. 298-304(7)
Authors: Xu Y.; Liu C.; Wang H.; Hao Q.

Low antimony-doped GaNxAs1-x on GaAs grown by solid-source molecular-beam epitaxy
pp. 305-309(5)
Authors: Cheah W.K.; Fan W.J.; Wicaksono S.; Yoon S.F.; Tan K.H.

Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy
pp. 310-315(6)
Authors: Naritsuka S.; Kobayashi O.; Mitsuda K.; Nishinaga T.

The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport
pp. 316-328(13)
Authors: Palosz W.; Grasza K.; Durose K.; Halliday D.P.; Boyall N.M.; Dudley M.; Raghothamachar B.; Cai L.

Selective silicon growth on nitride for silicon-plugging process in LPCVD
pp. 329-335(7)
Authors: Cheong W.-S.; Lee S.-K.; Roh J.-S.

Nitride-based green light emitting diodes grown by temperature ramping
pp. 336-341(6)
Authors: Liu C.H.; Su Y.K.; Wen T.C.; Chang S.J.; Chuang R.W.

Behaviour of glassy carbon under high pressure and temperature in the presence of invar alloy catalyst
pp. 342-347(6)
Authors: Singh B.P.; Singhal S.K.; Chopra R.; Sharda K.D.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
pp. 348-352(5)
Authors: Chen J.; Zhang S.M.; Zhang B.S.; Zhu J.J.; Feng G.; Shen X.M.; Wang Y.T.; Yang H.; Zheng W.C.

Observation of CuPt and CuAu I-type ordered structure in HgCdTe grown by isothermal vapour phase epitaxy
pp. 353-359(7)
Authors: Aguirre M.H.; Canepa H.R.; Walsoe de Reca N.E.

Growth, properties and application as an electrooptic Q-switch of langasite crystal
pp. 360-367(8)
Authors: Kong H.; Wang J.; Zhang H.; Yin X.; Zhang S.; Liu Y.; Cheng X.; Gao L.; Hu X.; Jiang M.

Growth of double perovskite Ca2FeMoO6 crystals by a floating zone technique
pp. 378-383(6)
Authors: Barbosa L.B.; Reyes Ardila D.; Andreeta J.P.

Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy
pp. 384-389(6)
Authors: Dong X.Y.; Dong J.W.; Xie J.Q.; Shih T.C.; McKernan S.; Leighton C.; Palmstrom C.J.

On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield
pp. 390-399(10)
Authors: Bickermann M.; Weingartner R.; Winnacker A.

Low temperature growth and characterization of (Na,K)NbOx thin films
pp. 400-404(5)
Authors: Kugler V.M.; Soderlind F.; Music D.; Helmersson U.; Andreasson J.; Lindback T.

Synthesis of nanocrystalline TiO2 in toluene by a solvothermal route
pp. 405-410(6)
Authors: Kim C.-S.; Moon B.K.; Park J.-H.; Tae Chung S.T.; Son S.-M.

ZnO nanomaterials synthesized from thermal evaporation of ball-milled ZnO powders
pp. 423-431(9)
Authors: Lee J.-S.; Park K.; Kang M.-I.; Park I.-W.; Kim S.-W.; Cho W.K.; Han H.S.; Kim S.

Al2O3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition
pp. 443-448(6)
Authors: Lee J.S.; Min B.; Cho K.; Kim S.; Park J.; Lee Y.T.; Kim N.S.; Lee M.S.; Park S.O.; Moon J.T.

Effects of RF power variation on properties of ZnO thin films and electrical properties of p-n homojunction
pp. 449-455(7)
Authors: Hwang D.-K.; Bang K.-H.; Jeong M.-C.; Myoung J.-M.

Growth of a new strontium borate crystal Sr4B14O25
pp. 456-460(5)
Authors: Kudrjavtcev D.P.; Oseledchik Y.S.; Prosvirnin A.L.; Svitanko N.V.

Effect of pH on the growth and characterization of l-HFB single crystal
pp. 461-468(8)
Authors: Rajendran K.V.; Jayaraman D.; Jayavel R.; Ramasamy P.

Numerical and experimental analysis of periodic patterns and sedimentation of lysozyme
pp. 469-486(18)
Authors: Lappa M.; Piccolo C.; Carotenuto L.

Growth of Bi2S3 skeleton crystals with three-dimensional network morphologies
pp. 487-491(5)
Authors: Wang D.; Shao M.; Yu D.; Yu W.; Qian Y.

Subtilisin surface properties and crystal growth kinetics
pp. 492-502(11)
Authors: Pan X.; Bott R.; Glatz C.E.

Author Index
pp. 516-521(6)

Subject Index
pp. 523-525(3)

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