Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Growth and optical characterization of large-scale crystal Cd_xZn_1-xS whiskers via vapor reaction
pp. 1-3(3)
Authors: Zhou S.M.; Feng Y.S.; Zhang L.D.

Synthesis and characterization of ZnAl₂O₄/SiO₂ nanocomposites by sol-gel method
pp. 4-8(5)
Authors: Duan X.; Yuan D.; Sun Z.; Sun H.; Xu D.; Lv M.

Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy
pp. 9-13(5)
Authors: Shen X.M.; Feng G.; Zhang B.S.; Duan L.H.; Wang Y.T.; Yang H.

Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
pp. 14-18(5)
Authors: Koumetz S.; Dubois C.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
pp. 19-25(7)
Authors: Qu B.; Chen Z.; Lu D.; Han P.; Liu X.; Wang X.; Wang D.; Zhu Q.; Wang Z.

Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals
pp. 26-36(11)
Authors: Yakovlev E.V.; Kalaev V.V.; Evstratov I.Y.; Frank-Rotsch C.; Neubert M.; Rudolph P.; Makarov Y.N.

Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
pp. 37-43(7)
Authors: Huang Q.F.; Yoon S.F.; Tan K.H.; Sun Z.Z.; Zhang R.; Jiang J.; Lee L.H.

Tuning of the electronic levels in vertically stacked InAs/GaAs quantum dots using crystal growth kinetics
pp. 44-50(7)
Authors: Gerardot B.D.; Shtrichman I.; Hebert D.; Petroff P.M.

Characteristics of UV photodetector fabricated by Al_0.3Ga_0.7N/GaN heterostructure
pp. 51-57(7)
Authors: Seo I.-S.; Lee I.-H.; Park Y.-J.; Lee C.-R.

Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots
pp. 58-67(10)
Authors: Wang Y.Q.; Wang Z.L.; Shen J.J.; Brown A.

The application of VLS growth technique to bulk semiconductors
pp. 68-78(11)
Authors: Yashina L.V.; Shtanov V.I.; Yanenko Z.G.

Liquid phase epitaxial growth of HgCdTe using a modified horizontal slider
pp. 79-86(8)
Authors: Radhakrishnan J.K.; Sitharaman S.; Gupta S.C.

Correlation between structural and optical properties of polycrystalline GaN
pp. 87-91(5)
Authors: Park S.-E.; Kim D.-J.; O B.

A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation
pp. 92-101(10)
Authors: Gondet S.; Duffar T.; Louchet F.; Theodore F.; Van Den Bogaert N.; Santailler J.L.

Photoluminescence characterization of Cd-annealing effects on high purity CdTe single crystals
pp. 102-106(5)
Authors: Song S.H.; Wang J.F.; Lalev G.M.; He L.; Isshiki M.

A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths
pp. 107-112(6)
Authors: Lin Y.S.; Ma K.J.; Chung Y.Y.; Feng S.W.; Cheng Y.C.; Lin E.C.; Yang C.C.; Kuo C.T.; Tsang J.S.

Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography
pp. 113-119(7)
Authors: Chen W.M.; McNally P.J.; Shvyd'ko Y.V.; Tuomi T.; Danilewsky A.N.; Lerche M.

Structural properties of ultrathin bcc Co (001) layers
pp. 120-127(8)
Authors: Blomqvist P.; Wappling R.

Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy
pp. 128-135(8)
Authors: Higashiwaki M.; Matsui T.

Synthesis of GaN by high-pressure ammonolysis of gallium triiodide
pp. 136-143(8)
Authors: Purdy A.P.; Case S.; Muratore N.

Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine
pp. 144-151(8)
Authors: Hsu Y.J.; Hong L.S.; Tsay J.E.

Liquid phase epitaxial growth and characterization of Ga_1-xMn_xAs layers on (100) GaAs substrate
pp. 152-158(7)
Authors: Yoon I.T.; Leem J.H.; Kang T.W.

The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films
pp. 159-166(8)
Authors: Namkoong G.; Alan Doolittle W.; Brown A.S.; Losurdo M.; Giangregorio M.M.; Bruno G.

Synthesis and characterization of Cu/SiO_2-x composite nanowires
pp. 167-173(7)
Authors: Jin A.Z.; Wang Y.G.; Zhang Z.

Neodymium and chromium segregation at high-temperature crystallization of (Nd,Y)Al₃(BO₃)₄ and (Nd,Y)Ca₄O(BO₃)₃ doped with Cr³⁺
pp. 174-179(6)
Authors: Leonyuk N.I.; Koporulina E.V.; Wang J.Y.; Hu X.B.; Mokhov A.V.

X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition
pp. 180-183(4)
Authors: Zhang Y.; Du G.; Wang X.; Li W.; Yang X.; Ma Y.; Zhao B.; Yang H.; Liu D.; Yang S.

Preparation and characterization of nanocrystalline zinc oxide by a novel solvothermal oxidation route
pp. 184-189(6)
Authors: Chen S.-J.; Li L.-H.; Chen X.-T.; Xue Z.; Hong J.-M.; You X.-Z.

Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions
pp. 190-198(9)
Authors: Tang I.-T.; Wang Y.C.; Hwang W.C.; Hwang C.C.; Wu N.C.; Houng M.-P.; Wang Y.-H.

Novel polyol route to AgBiS₂ nanorods
pp. 199-201(3)
Authors: Shen G.; Chen D.; Tang K.; Qian Y.

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition
pp. 202-207(6)
Authors: Zhang F.; Chen N.; Liu X.; Liu Z.; Yang S.; Chai C.

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
pp. 208-212(5)
Authors: Noriega O.C.; Tabata A.; Soares J.A.N.T.; Rodrigues S.C.P.; Leite J.R.; Ribeiro E.; Fernandez J.R.L.; Meneses E.A.; Cerdeira F.; As D.J.; Schikora D.; Lischka K.

Synthesis and characterization of ZnO nanorods
pp. 213-218(6)
Authors: Liu Y.; Liu Z.; Wang G.

Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxy
pp. 219-225(7)
Authors: Kim B.J.; Ok Y.-W.; Seong T.-Y.; Ashrafi A.B.M.A.; Kumano H.; Suemune I.

A novel synthesis route and phase transformation of Zno nanoparticles modified by DDAB
pp. 226-229(4)
Authors: Liang J.Y.; Guo L.; Xu H.B.; Jing L.; Dong L.X.; Hua W.Z.; Yu W.Z.; Weber J.

Growth of PbSe thin films on Si substrates by pulsed laser deposition method
pp. 230-235(6)
Authors: Rumianowski R.T.; Dygdala R.S.; Jung W.; Bala W.

Growth and characterization of Sr₃NbGa₃Si₂O₁₄ single crystals
pp. 236-240(5)
Authors: Wang Z.; Yuan D.; Cheng X.; Shi X.; Wei X.; Duan X.; Sun Z.; Luan C.; Guo S.; Xu D.; Lv M.; Pan L.

Crystal growth and optical properties of YbAl₃(BO₃)₄: a promising stoichiometric laser crystal
pp. 241-245(5)
Authors: Xu Y.; Gong X.; Chen Y.; Huang M.; Luo Z.; Huang Y.

Growth of birefringent Ca₃(BO₃)₂ crystals by the Czochralski method
pp. 246-250(5)
Authors: Zhang S.; Wu X.; Song Y.; Ni D.; Hu B.; Zhou T.

Synthesis and optical properties of cds semiconductor nanocrystallites encapsulated in a poly (ethylene oxide) matrix
pp. 251-256(6)
Authors: Yang Y.; Chen H.; Bao X.

Development of texture in TiN films deposited by filtered cathodic vacuum arc
pp. 257-264(8)
Authors: Cheng Y.H.; Tay B.K.

Observations of nitrogen-related photoluminescence bands from nitrogen-doped ZnO films
pp. 265-269(5)
Authors: Wang Y.G.; Lau S.P.; Zhang X.H.; Lee H.W.; Hng H.H.; Tay B.K.

MBE growth of CdSeTe/Si composite substrate for long-wavelength IR HgCdTe applications
pp. 270-274(5)
Authors: Chen Y.P.; Brill G.; Dhar N.K.

Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al₂O₃ by metal-organic chemical vapor deposition
pp. 275-278(4)
Authors: Yang X.; Du G.; Wang X.; Wang J.; Liu B.; Zhang Y.; Liu D.; Liu D.; Ong H.C.; Yang S.

Ordered array of nanoscale Ru crystals in the SrRuO₃ buffer layer in an SrTiO₃/SrRuO₃ bilayer film on SrTiO₃ substrate
pp. 279-284(6)
Authors: Qin Y.L.; Jia C.L.; Urban K.; Hao J.H.; Xi X.X.

Low temperature preparation of nanocrystalline Mn₂O₃ via ethanol-thermal reduction of MnO₂
pp. 285-288(4)
Authors: He W.L.; Zhang Y.; Zhang X.; Wang H.; Yan H.

Reducing stress in silicon carbide epitaxial layers
pp. 289-296(8)
Authors: Danielsson O.; Hallin C.; Janzen E.

Surfactant-aided solvothermal synthesis of dinickel phosphide nanocrystallites using red phosphorus as starting materials
pp. 297-301(5)
Authors: Liu J.; Chen X.; Shao M.; An C.; Yu W.; Qian Y.

Characterization of Ba_0.1Sr_0.9TiO₃/YBa₂Cu₃O_7- heterostructures on vicinal LaAlO₃ substrates
pp. 302-307(6)
Authors: Peng W.; Hu W.; Wang T.; Zhao X.; Zhu X.; Qi H.; Lei C.; Chen Y.; Zheng D.; Li L.

Non-linear optical properties of arylfuranylpropenones
pp. 308-310(3)
Authors: Holla B.S.; Veerendra B.; Indira J.

Sol-gel preparation of Co²⁺: MgAl₂O₄ nanocrystals embedded in SiO₂-based glass
pp. 311-316(6)
Authors: Duan X.; Yuan D.; Sun Z.; Sun H.; Luan C.; Wang X.; Xu D.; Lv M.

Influence of pH on the growth and characteristics of nonlinear optical zinc thiourea chloride (ZTC) single crystals
pp. 317-327(11)
Authors: Rajasekaran R.; Kumar R.M.; Jayavel R.; Ramasamy P.

Growth, structural and optical studies of chromium doped KTiOPO₄ single crystals
pp. 328-332(5)
Authors: Kannan C.V.; Ganesamoorthy S.; Bocelli G.; Righi L.; Ramasamy P.

The influence of lattice mismatch and film thickness on the growth of TiO₂ on LaAlO₃ and SrTiO₃ substrates
pp. 333-342(10)
Authors: Kennedy R.J.; Stampe P.A.

Experimental determination of the metastable zone width of borax decahydrate by ultrasonic velocity measurement
pp. 343-349(7)
Authors: Gurbuz H.; Ozdemir B.

A rapid ethylenediamine-assisted polyol route to synthesize Sb₂E₃ (E=S, Se) nanowires
pp. 350-354(5)
Authors: Shen G.S.; Chen D.; Tang K.; Jiang X.; Qian Y.

Growth of large-sized Yb:YAG single crystals by temperature gradient technique
pp. 355-359(5)
Authors: Zhao G.; Si J.; Xu X.; Xu J.; Song H.; Zhou Y.

Influence of oxalic acid on the agglomeration process and total soda content in precipitated Al(OH)₃
pp. 360-366(7)
Authors: Nikolic I.; Blecic D.; Blagojevic N.; Radmilovic V.; Kovacevic K.

Morphology and crystalline characterization of abalone shell and mimetic mineralization
pp. 367-371(5)
Authors: Wang J.; Xu Y.; Zhao Y.; Huang Y.; Wang D.; Jiang L.; Wu J.; Xu D.

Planar growth faults in double-layered or triple-layered (Ca,Sr)-ruthenate single crystals by the self-flux technique
pp. 372-381(10)
Authors: Xin Y.; Cao G.; Crow J.E.

Growth of BaFe₁₂O₁₉ thin films formed by reactive diffusion
pp. 382-390(9)
Authors: Pankov V.; Bartholdson A.; Stukalov O.; Smolenchuk S.; Babushkin O.; Gremenok V.

Effect of Ag addition on the structures of intermetallic compounds and the adhesion strength of the Sn-9Zn-xAg/Cu interface
pp. 391-400(10)
Authors: Chang T.-C.; Wang M.-C.; Hon M.-H.

Crystal growth of the intermetallic compounds at the Sn-9Zn-xAg/Cu interface during isothermal aging
pp. 401-412(12)
Authors: Chang T.-C.; Wang M.-C.; Hon M.-H.

Effects of a rotating magnetic field on the thermocapillary instability in the floating zone process
pp. 413-423(11)
Authors: Walker J.S.; Witkowski L.M.; Houchens B.C.

Morphology of Pt islands grown on MgO(001)
pp. 424-432(9)
Authors: Gatel C.; Baules P.; Snoeck E.

Growth of aluminum nitride films at low temperature
pp. 433-439(7)
Authors: Lin Y.-R.; Wu S.-T.

Gas-phase preparation of L1₀ ordered FePt nanoparticles
pp. 440-450(11)
Authors: Stappert S.; Rellinghaus B.; Acet M.; Wassermann E.F.

Particle-solidification front dynamics using a fully coupled approach, Part I: methodology
pp. 451-466(16)
Authors: Garvin J.W.; Udaykumar H.S.

Particle-solidification front dynamics using a fully coupled approach, part II: comparison of drag expressions
pp. 467-479(13)
Authors: Garvin J.W.; Udaykumar H.S.

Erratum to ''Growth and spectroscopic characterization of Nd₃BWO₉ single crystal'' - J. Crystal Growth 247 (2003) 467-471
pp. 480-480(1)
Authors: Majchrowski A.; Michalski E.; Brenier A.