Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Contents
pp. xi-xx(1)

Three decades of molecular beam epitaxy
pp. 1-8(8)
Author: Foxon C.T.

Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy
pp. 9-16(8)
Author: Sakaki H.

Speculations about future directions
pp. 17-22(6)
Author: Kroemer H.

Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN
pp. 23-28(6)
Authors: Stanley I.; Coleiny G.; Venkat R.

A simple model for MBE growth controlled by group III atom migration
pp. 29-34(6)
Author: Holland M.C.

Dynamics of spontaneous roughening on the GaAs(001)-(2x4) surface
pp. 35-39(5)
Authors: Ding Z.; Bullock D.W.; Oliver W.F.; Thibado P.M.; LaBella V.P.

Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiation
pp. 40-45(6)
Author: Asaoka Y.

Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE
pp. 46-50(5)
Authors: Tsukamoto S.; Pristovsek M.; Ohtake A.; Orr B.G.; Bell G.R.; Ohno T.; Koguchi N.

Time-resolved X-ray diffraction study on surface structure and morphology during molecular-beam epitaxy growth
pp. 51-55(5)
Authors: Takahasi M.; Yoneda Y.; Inoue H.; Yamamoto N.; Mizuki J.

Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction
pp. 56-61(6)
Authors: Braun W.; Jenichen B.; Kaganer V.M.; Shtukenberg A.S.; Daweritz L.; Ploog K.H.

Control of MBE surface step-edge kinetics to make an atomically smooth quantum well
pp. 62-67(6)
Authors: Yoshita M.; Oh J.-W.; Akiyama H.; Pfeiffer L.N.; West K.W.

Real-time surface composition and roughness analysis in MBE using RHEED-induced X-ray fluorescence
pp. 68-72(5)
Authors: Braun W.; Ploog K.H.

Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations
pp. 73-79(7)
Authors: Harvey T.E.; Bertness K.A.; Hickernell R.K.; Wang C.M.; Splett J.D.

V/III ratio dependence of surface migration length of As₄ molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates
pp. 80-84(5)
Authors: Higuchi Y.; Uemura M.; Masui Y.; Kitada T.; Shimomura S.; Hiyamizu S.

Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBE
pp. 85-89(5)
Authors: Gottwaldt L.; Pierz K.; Ahlers F.J.; Gobel E.O.; Nau S.; Torunski T.; Stolz W.

Characterization of interface roughness scattering of electrons in an In_0.53Ga_0.47As/In_0.52Al_0.48As QW-HEMT structure with (411)A super-flat interfaces
pp. 90-95(6)
Authors: Watanabe I.; Kanzaki K.; Kitada T.; Yamamoto M.; Shimomura S.; Hiyamizu S.

Electronic properties of etched-regrown heterostructure interfaces
pp. 96-100(5)
Authors: Beyer S.; Lohr S.; Heyn C.; Heitmann D.; Hansen W.

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
pp. 101-105(5)
Authors: Martini S.; Quivy A.A.; Lamas T.E.; da Silva M.J.; da Silva E.C.F.; Leite J.R.

Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy
pp. 106-111(6)
Authors: Beresford R.; Lynch C.; Chason E.

Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
pp. 112-117(6)
Authors: Chauveau J.-M.; Cordier Y.; Kim H.J.; Ferre D.; Androussi Y.; Persio J.D.

Effects of noise level in fitting in situ optical reflectance spectroscopy data
pp. 118-123(6)
Authors: Fu C.; Bertness K.A.; Wang C.M.

InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)
pp. 124-129(6)
Authors: Pinsukanjana P.R.; Marquis J.M.; Hubbard J.; Trivedi M.A.; Dickey R.F.; Tsai J.M.-S.; Kuo S.P.; Kao P.S.; Kao Y.-C.

Multiwafer gas source MBE development for InGaAsP/InP laser production
pp. 130-134(5)
Authors: Lelarge F.; Sanchez J.J.; Gaborit F.; Gentner J.L.

Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy
pp. 135-139(5)
Authors: Zhan H.H.; Notzel R.; Hamhuis G.J.; Eijkemans T.J.; Wolter J.H.

Ga/In-intermixing and segregation during InAs quantum dot formation
pp. 140-144(5)
Authors: Heyn C.; Hansen W.

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
pp. 145-149(5)
Authors: Ferdos F.; Wang S.; Wei Y.; Sadeghi M.; Zhao Q.; Larsson A.

Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B: self-organization of template for InAs quantum dot nucleation control
pp. 150-154(5)
Authors: Gong Q.; Notzel R.; Wolter J.H.

Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers
pp. 155-160(6)
Authors: Takehana K.; Pulizzi F.; Patane A.; Henini M.; Main P.C.; Eaves L.; Granados D.; Garcia J.M.

Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(001)
pp. 161-165(5)
Authors: Hasegawa S.; Suekane O.; Takata M.; Nakashima H.

Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dots
pp. 166-171(6)
Authors: Songmuang R.; Kiravittaya S.; Sawadsaringkarn M.; Panyakeow S.; Schmidt O.G.

Aluminium incorporation for growth optimization of 1.3m emission InAs/GaAs quantum dots by molecular beam epitaxy
pp. 172-176(5)
Authors: Wei Y.Q.; Wang S.M.; Ferdos F.; Vukusic J.; Zhao Q.X.; Sadeghi M.; Larsson A.

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
pp. 177-180(4)
Authors: Xu Z.C.; Leosson K.; Birkedal D.; Hvam J.M.; Sadowski J.; Zhao Z.Y.; Chen X.S.; Liu Y.M.; Yang K.T.

Optical response at 1.3m and 1.5m with InAs quantum dots embedded in a pure GaAs matrix
pp. 181-185(5)
Authors: da Silva M.J.; Quivy A.A.; Martini S.; Lamas T.E.; da Silva E.C.F.; Leite J.R.

Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots
pp. 186-191(6)
Authors: Maes J.; Henini M.; Hayne M.; Patane A.; Pulizzi F.; Eaves L.; Main P.C.; Moshchalkov V.V.

Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption
pp. 192-195(4)
Authors: Ochoa D.; Polimeni A.; Capizzi M.; Patane A.; Henini M.; Eaves L.; Main P.C.

Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots
pp. 196-200(5)
Authors: Somintac A.; Estacio E.; Salvador A.

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy
pp. 201-207(7)
Authors: Saucedo-Zeni N.; Zamora-Peredo L.; Gorbatchev A.Y.; Lastras-Martnez A.; Balderas-Navarro R.; Medel-Ruiz C.I.; Mendez-Garca V.H.

Characteristics of InAs ''dots-in-a-graded-well''
pp. 208-212(5)
Authors: Chen L.; Pal D.; Towe E.

Customized nanostructures MBE growth: from quantum dots to quantum rings
pp. 213-217(5)
Authors: Granados D.; Garca J.M.

Desorption of InAs quantum dots
pp. 218-222(5)
Authors: Heyn C.; Hansen W.

Growth and temperature characteristic of self-assembled InAs-QD on GaInP
pp. 223-229(7)
Authors: Amanai H.; Nagao S.; Sakaki H.

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55m quantum dot laser
pp. 230-235(6)
Authors: Paranthoen C.; Platz C.; Moreau G.; Bertru N.; Dehaese O.; Le Corre A.; Miska P.; Even J.; Folliot H.; Labbe C.; Patriarche G.; Simon J.C.; Loualiche S.

Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots
pp. 236-242(7)
Authors: Perez-Centeno A.; Mendez-Garca V.H.; Zamora-Peredo L.; Saucedo-Zeni N.; Lopez-Lopez M.

Growth and microstructure of semimetallic ErAs particles embedded in an In_0.53Ga_0.47As matrix
pp. 243-247(5)
Authors: Driscoll D.C.; Hanson M.P.H.; Mueller E.; Gossard A.C.

Epitaxial growth of 1.55m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
pp. 248-252(5)
Authors: Schwertberger R.; Gold D.; Reithmaier J.P.; Forchel A.

Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masks
pp. 253-257(5)
Authors: Mei X.; Blumin M.; Kim D.; Wu Z.; Ruda H.E.

Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching
pp. 258-263(6)
Authors: Kiravittaya S.; Songmuang R.; Jin-Phillipp N.Y.; Panyakeow S.; Schmidt O.G.

Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formation
pp. 264-268(5)
Authors: Mano T.; Notzel R.; Hamhuis G.J.; Eijkemans T.J.; Wolter J.H.

Improved uniformity of self-organized In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy
pp. 269-275(7)
Authors: Ohno Y.; Shimomura S.; Hiyamizu S.

Formation of nano-oxide regions in p²⁺-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devices
pp. 276-280(5)
Authors: Matsuzaki Y.; Ota N.; Yamada A.; Sandhu A.; Konagai M.

Application of multi-step formation during molecular beam epitaxy for fabricating novel nanomechanical structures
pp. 281-284(4)
Authors: Yamaguchi H.; Hirayama Y.

Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors
pp. 285-291(7)
Author: Ohno H.

Growth and properties of ferromagnet-semiconductor heterostructures for spin injection at room temperature
pp. 292-296(5)
Authors: Ploog K.H.; Herfort J.; Schonherr H.-P.; Moreno M.; Dhar S.

Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection
pp. 297-302(6)
Authors: Daweritz L.; Kastner M.; Hesjedal T.; Plake T.; Jenichen B.; Ploog K.H.

MBE growth, structural, and transport properties of Mn -doped GaAs Layers
pp. 303-310(8)
Authors: Nazmul A.M.; Sugahara S.; Tanaka M.

The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers
pp. 311-316(6)
Authors: Campion R.P.; Edmonds K.W.; Zhao L.X.; Wang K.Y.; Foxon C.T.; Gallagher B.L.; Staddon C.R.

Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layers
pp. 317-322(6)
Authors: Sugahara S.; Tanaka M.

Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy
pp. 323-326(4)
Authors: Bach P.; Ruster C.; Gould C.; Becker C.R.; Schmidt G.; Molenkamp L.W.

MBE growth and properties of GaCrN
pp. 327-330(4)
Authors: Hashimoto M.; Zhou Y.K.; Kanamura M.; Katayama-Yoshida H.; Asahi H.

MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties
pp. 331-336(6)
Authors: Chen P.P.; Makino H.; Kim J.J.; Yao T.

Spin injection from a ferromagnetic electrode into InAs surface inversion layer
pp. 337-341(5)
Authors: Yoh K.; Ohno H.; Katano Y.; Mukasa K.; Ramsteiner M.

New structures for carrier-controlled ferromagnetism in Cd_1-xMn_xTe quantum wells
pp. 342-346(5)
Authors: Bertolini M.; Maslana W.; Boukari H.; Gilles B.; Cibert J.; Ferrand D.; Tatarenko S.; Kossacki P.; Gaj J.A.

Molecular beam epitaxial growth of CdMnSe on InAs and AlGaSb
pp. 347-352(6)
Authors: Grabs P.; Slobodskyy A.; Richter G.; Fiederling R.; Gould C.; Becker C.R.; Schmidt G.; Molenkamp L.W.

GaInNAs for GaAs based lasers for the 1.3 to 1.5m range
pp. 353-359(7)
Authors: Fischer M.; Gollub D.; Reinhardt M.; Kamp M.; Forchel A.

The role of Sb in the MBE growth of (GaIn)(NAsSb)
pp. 360-366(7)
Authors: Volz K.; Gambin V.; Ha W.; Wistey M.A.; Yuen H.; Bank S.; Harris J.S.

1.5m GaInNAs(Sb) lasers grown on GaAs by MBE
pp. 367-371(5)
Authors: Bank S.; Ha W.; Gambin V.; Wistey M.; Yuen H.; Goddard L.; Kim S.; Harris J.S.

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy
pp. 372-377(6)
Authors: Makino S.; Miyamoto T.; Ohta M.; Kageyama T.; Ikenaga Y.; Koyama F.; Iga K.

A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells
pp. 378-382(5)
Authors: Peng C.S.; Li W.; Jouhti T.; Pavelescu E.-M.; Pessa M.

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
pp. 383-387(5)
Authors: Chauveau J.M.; Trampert A.; Pinault M.A.; Tournie E.; Du K.; Ploog K.H.

InAs/InGaAsN quantum dots emitting at 1.55m grown by molecular beam epitaxy
pp. 388-391(4)
Authors: Ustinov V.M.; Egorov A.Y.; Odnoblyudov V.A.; Kryzhanovskaya N.V.; Musikhin Y.G.; Tsatsul'nikov A.F.; Alferov Z.I.

A comparison of MBE- and MOCVD-grown GaInNAs
pp. 392-398(7)
Authors: Ptak A.J.; Johnston S.W.; Kurtz S.; Friedman D.J.; Metzger W.K.

Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content
pp. 399-402(4)
Authors: Mussler G.; Daweritz L.; Ploog K.H.

Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3m wavelength
pp. 403-407(5)
Authors: Li L.H.; Patriarche G.; Lemaitre A.; Largeau L.; Travers L.; Harmand J.C.

Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure
pp. 408-411(4)
Authors: Gambin V.; Lordi V.; Ha W.; Wistey M.; Takizawa T.; Uno K.; Friedrich S.; Harris J.

Growth of GaInNAs by atomic hydrogen-assisted RF-MBE
pp. 412-416(5)
Authors: Ohmae A.; Matsumoto N.; Okada Y.

Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
pp. 417-421(5)
Authors: Egorov A.Y.; Odnobludov V.A.; Mamutin V.V.; Zhukov A.E.; Tsatsul'nikov A.F.; Kryzhanovskaya N.V.; Ustinov V.M.; Hong Y.G.; Tu C.W.

RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
pp. 422-426(5)
Authors: Nishio S.; Nishikawa A.; Katayama R.; Onabe K.; Shiraki Y.

MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)
pp. 427-431(5)
Authors: Nishikawa A.; Katayama R.; Onabe K.; Shiraki Y.

MBE development of dilute nitrides for commercial long-wavelength laser applications
pp. 432-436(5)
Authors: Malis O.; Liu W.K.; Gmachl C.; Fastenau J.M.; Joel A.; Gong P.; Bland S.W.; Moshegov N.

Growth and characterization of GaInNP grown on GaAs substrates
pp. 437-442(6)
Authors: Hong Y.G.; Juang F.S.; Kim M.H.; Tu C.W.

Improvement of crystalline quality of GaAs_yP_1-x-yN_x layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation
pp. 443-448(6)
Authors: Momose K.; Yonezu H.; Furukawa Y.; Utsumi A.; Yoshizumi Y.; Shinohara S.

Surfactant enhanced growth of GaNAs and InGaNAs using bismuth
pp. 449-454(6)
Authors: Tixier S.; Adamcyk M.; Young E.C.; Schmid J.H.; Tiedje T.

Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy
pp. 455-459(5)
Authors: Kimura R.; Shigemori A.; Shike J.; Ishida K.; Takahashi K.

Control of the polarity of GaN films using an Mg adsorption layer
pp. 460-464(5)
Authors: Grandjean N.; Dussaigne A.; Pezzagna S.; Vennegues P.

Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy
pp. 465-470(6)
Authors: Kim M.-H.; Juang F.S.; Hong Y.G.; Tu C.W.; Park S.-J.

In surface segregation in InGaN/GaN quantum wells
pp. 471-475(5)
Authors: Dussaigne A.; Damilano B.; Grandjean N.; Massies J.

Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
pp. 476-480(5)
Authors: Dimakis E.; Georgakilas A.; Androulidaki M.; Tsagaraki K.; Kittler G.; Kalaitzakis F.; Cengher D.; Bellet-Amalric E.; Jalabert D.; Pelekanos N.T.

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
pp. 481-486(6)
Authors: Katzer D.S.; Storm D.F.; Binari S.C.; Roussos J.A.; Shanabrook B.V.; Glaser E.R.

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN
pp. 487-493(7)
Authors: Bhattacharyya A.; Friel I.; Iyer S.; Chen T.-C.; Li W.; Cabalu J.; Fedyunin Y.; Ludwig K.F.; Moustakas T.D.; Maruska H.-P.; Hill D.W.; Gallagher J.J.; Chou M.C.; Chai B.

Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures
pp. 494-498(5)
Authors: Higashiwaki M.; Matsui T.

MOMBE growth studies of GaN using metalorganic sources and nitrogen
pp. 499-504(6)
Authors: Li T.; Campion R.P.; Foxon C.T.; Rushworth S.A.; Smith L.M.

Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry
pp. 505-509(5)
Authors: Averbeck R.; Koblmueller G.; Riechert H.; Pongratz P.

Arsenic incorporation in GaN during growth by molecular beam epitaxy
pp. 510-514(5)
Authors: Foxon C.T.; Novikov S.V.; Li T.; Campion R.P.; Winser A.J.; Harrison I.; Kappers M.J.; Humphreys C.J.

Digital alloy growth in mixed As/Sb heterostructures
pp. 515-520(6)
Authors: Kaspi R.; Donati G.P.

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications
pp. 521-525(5)
Authors: Johnson S.R.; Guo C.Z.; Chaparro S.; Sadofyev Y.G.; Wang J.; Cao Y.; Samal N.; Xu J.; Yu S.Q.; Ding D.; Zhang Y.-H.

Investigation of a growth interruption under an As flux at AlSb/InAs interfaces with InSb bonds
pp. 526-531(6)
Authors: Sigmund J.; Karova K.; Miehe G.; Saglam M.; Hartnagel H.L.; Fuess H.

Controlled n-type doping of antimonides and arsenides using GaTe
pp. 532-537(6)
Authors: Bennett B.R.; Magno R.; Papanicolaou N.

MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
pp. 538-542(5)
Authors: Solov'ev V.A.; Terent'ev Y.V.; Toropov A.A.; Mel'tser B.Y.; Semenov A.N.; Ivanov S.V.; Kop'ev P.S.; Meyer J.R.

Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells
pp. 543-546(4)
Authors: Kadow C.; Lin H.-K.; Dahlstrom M.; Rodwell M.; Gossard A.C.; Brar B.; Sullivan G.

Structure stability of short-period InAs/AlSb superlattices
pp. 547-550(4)
Authors: Xu D.; Litvinchuk A.P.; Wang X.; Delaney A.; Le H.; Pei S.S.

Anisotropic structural and electronic properties of InSb/Al_xIn_1-xSb quantum wells grown on GaAs (001) substrates
pp. 551-555(5)
Authors: Mishima T.D.; Keay J.C.; Goel N.; Ball M.A.; Chung S.J.; Johnson M.B.; Santos M.B.

InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applications
pp. 556-559(4)
Authors: Yamaguchi H.; Miyashita S.; Hirayama Y.

Transport properties of Sn-doped InSb thin films and applications to Hall element
pp. 560-564(5)
Authors: Okamoto A.; Shibasaki I.

Characterization of MBE grown II-VI semiconductor thin layers by X-ray interference
pp. 565-570(6)
Authors: Prior K.A.; Tang X.; O'Donnell C.; Bradford C.; David L.; Cavenett B.C.

Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBE
pp. 571-575(5)
Authors: Badano G.; Garland J.W.; Sivananthan S.

PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers
pp. 576-580(5)
Authors: Mita Y.; Kuronuma R.; Sasaki S.; Inoue M.; Maruyama S.

Growth and characterization of MgS/CdSe self-assembled quantum dots
pp. 581-585(5)
Authors: Bradford C.; Urbaszek B.; Funato M.; Balocchi A.; Graham T.C.M.; McGhee E.J.; Warburton R.J.; Prior K.A.; Cavenett B.

Growth and characterization of CdSe:Mn quantum dots
pp. 586-590(5)
Authors: Tang X.; Urbaszek B.; Graham T.C.M.; Warburton R.J.; Prior K.A.; Cavenett B.C.

Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source
pp. 591-595(5)
Authors: David L.; Bradford C.; Tang X.; Graham T.C.M.; Prior K.A.; Cavenett B.C.

High quality ZnTe heteroepitaxy layers using low-temperature buffer layers
pp. 596-601(6)
Authors: Chang J.; Godo K.; Song J.; Oh D.; Lee C.; Yao T.

Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer composition
pp. 602-606(5)
Authors: Matsumura N.; Sakamoto T.; Saraie J.

Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy
pp. 607-611(5)
Authors: Oh D.C.; Chang J.H.; Takai T.; Song J.S.; Godo K.; Park Y.K.; Shindo K.; Yao T.

Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures
pp. 612-618(7)
Authors: Chang J.; Takai T.; Godo K.; Makino H.; Goto T.; Yao T.

MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3- oriented thin films
pp. 619-622(4)
Authors: Liu G.; Feng Y.; Wang H.; Makino H.; Hanada T.; Yao T.

ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy
pp. 623-627(5)
Authors: Ogata K.; Koike K.; Tanite T.; Komuro T.; Yan F.; Sasa S.; Inoue M.; Yano M.

Doping effects in ZnO layers using Li₃N as a doping source
pp. 628-632(5)
Authors: Ko H.-J.; Chen Y.; Hong S.-K.; Yao T.

Natural ordering of ZnO_1-xSe_x grown by radical source MBE
pp. 633-637(5)
Authors: Iwata K.; Yamada A.; Fons P.; Matsubara K.; Niki S.

Development of integrated heterostructures on silicon by MBE
pp. 638-644(7)
Authors: Droopad R.; Yu Z.; Li H.; Liang Y.; Overgaard C.; Demkov A.; Zhang X.; Moore K.; Eisenbeiser K.; Hu M.; Curless J.; Finder J.

Advances in high gate dielectrics for Si and III-V semiconductors
pp. 645-650(6)
Authors: Kwo J.; Hong M.; Busch B.; Muller D.A.; Chabal Y.J.; Kortan A.R.; Mannaerts J.P.; Yang B.; Ye P.; Gossmann H.; Sergent A.M.; Ng K.K.; Bude J.; Schulte W.H.; Garfunkel E.; Gustafsson T.

Heavy arsenic doping of silicon by molecular beam epitaxy
pp. 651-656(6)
Authors: Liu X.; Tang Q.; Kamins T.I.; Harris J.S.

Ordered arrays of rare-earth silicide nanowires on Si(001)
pp. 657-661(5)
Authors: Ragan R.; Chen Y.; Ohlberg D.A.A.; Medeiros-Ribeiro G.; Williams R.S.

Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE
pp. 662-665(4)
Authors: Tang Q.; Liu X.; Kamins T.I.; Solomon G.S.; Harris J.S.

Critical thickness of self-assembled Ge quantum dot superlattices
pp. 666-669(4)
Authors: Liu J.L.; Wan J.; Wang K.L.; Yu D.P.

Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device application
pp. 670-675(6)
Authors: Irisawa T.; Koh S.; Nakagawa K.; Shiraki Y.

Dynamics and surface segregation during GSMBE of Si_1-yC_y and Si_1-x-yGe_xC_y on the Si(001) surface
pp. 676-680(5)
Authors: Price R.W.; Tok E.S.; Liu R.; Wee A.T.S.; Woods N.J.; Zhang J.

Characterization of epitaxial Si_1-yC_y layers on Si(001) grown by gas-source molecular beam epitaxy
pp. 681-684(4)
Authors: Abe K.; Yamada A.; Konagai M.

Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates
pp. 685-688(4)
Authors: Sawano K.; Hirose Y.; Koh S.; Nakagawa K.; Hattori T.; Shiraki Y.

Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxy
pp. 689-692(4)
Authors: Koh S.; Murata K.; Irisawa T.; Nakagawa K.; Shiraki Y.

Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures
pp. 693-696(4)
Authors: Sawano K.; Arimoto K.; Hirose Y.; Koh S.; Usami N.; Nakagawa K.; Hattori T.; Shiraki Y.

Continuous wave operation of quantum cascade lasers
pp. 697-700(4)
Authors: Beck M.; Hofstetter D.; Aellen T.; Blaser S.; Faist J.; Oesterle U.; Gini E.

Thermal behavior of GaAs/AlGaAs quantum-cascade lasers: effect of the Al content in the barrier layers
pp. 701-706(6)
Authors: Ortiz V.; Becker C.; Page H.; Sirtori C.

Strain compensated Si/Si_0.2Ge_0.8 quantum cascade structures grown by low temperature molecular beam epitaxy
pp. 707-717(11)
Authors: Grutzmacher D.; Mentese S.; Muller E.; Diehl L.; Sigg H.; Campidelli Y.; Kermarrec O.; Bensahel D.; Roch T.; Stangl J.; Bauer G.

InAs-based quantum cascade light emitting structures containing a double plasmon waveguide
pp. 718-722(5)
Authors: Ohtani K.; Sakuma H.; Ohno H.

Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices
pp. 723-728(6)
Authors: Marcadet X.; Becker C.; Garcia M.; Prevot I.; Renard C.; Sirtori C.

InAs/InGaAs/GaAs quantum dot lasers of 1.3m range with enhanced optical gain
pp. 729-736(8)
Authors: Kovsh A.R.; Maleev N.A.; Zhukov A.E.; Mikhrin S.S.; Vasil'ev A.P.; Semenova E.A.; Shernyakov Y.M.; Maximov M.V.; Livshits D.A.; Ustinov V.M.; Ledentsov N.N.; Bimberg D.; Alferov Z.I.

Tuning the single optical mode spontaneous emission coupling of a quantum dot in a micropost cavity
pp. 737-741(5)
Authors: Solomon G.S.; Pelton M.; Yamamoto Y.

Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3m
pp. 742-747(6)
Authors: Krebs R.; Deubert S.; Reithmaier J.P.; Forchel A.

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0m
pp. 748-753(6)
Authors: Boehm G.; Ortsiefer M.; Shau R.; Rosskopf J.; Lauer C.; Maute M.; Kohler F.; Mederer F.; Meyer R.; Amann M.-C.

Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers
pp. 754-759(6)
Authors: Cengher D.; Hatzopoulos Z.; Gallis S.; Deligeorgis G.; Aperathitis E.; Androulidaki M.; Alexe M.; Dragoi V.; Kyriakis-Bitzaros E.D.; Halkias G.; Georgakilas A.

A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3m lasers
pp. 760-765(6)
Authors: SpringThorpe A.J.; Extavour M.; Goodchild D.; Griswold E.M.; Smith G.; White J.K.; Hinzer K.; Glew R.; Williams R.; Robert F.

Lattice-matched Al_0.95Ga_0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs
pp. 766-770(5)
Authors: Reddy M.H.M.; Buell D.A.; Asano T.; Koda R.; Feezell D.; Huntington A.S.; Coldren L.A.

Room temperature 1.3m emission from self-assembled GaSb/GaAs quantum dots
pp. 771-776(6)
Authors: Farrer I.; Murphy M.J.; Ritchie D.A.; Shields A.J.

Experimental extract and empirical formulas of refractive indices of GaAs and AlAs at high temperature by HRXRD and optical reflectivity measurement
pp. 777-781(5)
Authors: Zhang B.Y.; Solomon G.; Weihs G.; Yamamoto Y.

The effects of (NH₄)₂S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
pp. 782-786(5)
Authors: Zhang X.; Li A.Z.; Lin C.; Zheng Y.L.; Xu G.Y.; Qi M.; Zhang Y.G.

Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer
pp. 787-793(7)
Authors: Rotella P.; Raghavan S.; Stintz A.; Fuchs B.; Krishna S.; Morath C.; Le D.; Kennerly S.W.

Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55m
pp. 794-799(6)
Authors: Yu X.; Scaccabarozzi L.; Levi O.; Pinguet T.J.; Fejer M.M.; Harris J.S.

Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operation
pp. 800-803(4)
Authors: Lee H.J.; Fujiwara A.; Imada A.; Asahi H.

Properties of metamorphic materials and device structures on GaAs substrates
pp. 804-810(7)
Authors: Hoke W.E.; Kennedy T.D.; Torabi A.; Whelan C.S.; Marsh P.F.; Leoni R.E.; Lardizabal S.M.; Zhang Y.; Jang J.H.; Adesida I.; Xu C.; Hsieh K.C.

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances
pp. 811-815(5)
Authors: Cordier Y.; Semond F.; Lorenzini P.; Grandjean N.; Natali F.; Damilano B.; Massies J.; Hoel V.; Minko A.; Vellas N.; Gaquiere C.; DeJaeger J.C.; Dessertene B.; Cassette S.; Surrugue M.; Adam D.; Grattepain J.-C.; Aubry R.; Delage S.L.

High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
pp. 816-821(6)
Authors: Li A.Z.; Chen Y.Q.; Chen J.X.; Qi M.; Liu X.C.; Chen J.; Wang R.M.; Wang W.L.; Li W.X.

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
pp. 822-826(5)
Authors: Cordier Y.; Lorenzini P.; Chauveau J.-M.; Ferre D.; Androussi Y.; DiPersio J.; Vignaud D.; Codron J.-L.

High indium metamorphic HEMT on a GaAs substrate
pp. 827-831(5)
Authors: Hoke W.E.; Kennedy T.D.; Torabi A.; Whelan C.S.; Marsh P.F.; Leoni R.E.; Xu C.; Hsieh K.C.

Growth of shallow InAs HEMTs with metamorphic buffer
pp. 832-836(5)
Authors: Heyn C.; Mendach S.; Lohr S.; Beyer S.; Schnull S.; Hansen W.

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga₂O₃(Gd₂O₃) as gate dielectric
pp. 837-842(6)
Authors: Yang B.; Ye P.D.; Kwo J.; Frei M.R.; Gossmann H.-J.L.; Mannaerts J.P.; Sergent M.; Hong M.; Ng K.; Bude J.

V-grooved InGaAs quantum-wire FET fabricated under an As₂ flux in molecular-beam epitaxy
pp. 843-847(5)
Authors: Sugaya T.; Jang K.-Y.; Wada T.; Sato A.; Ogura M.; Komori K.

Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors
pp. 848-851(4)
Authors: Rajavel R.D.; Hussain T.; Montes M.C.; Sawins M.W.; Thomas S.; Chow D.H.

Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
pp. 852-857(6)
Authors: Averett K.L.; Wu X.; Koch M.W.; Wicks G.W.

Author Index
pp. 858-872(15)

Subject Index
pp. 873-875(3)