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Publisher: Elsevier

Volume 250, Number 3, April 2003

Editorial Board
pp. ii-ii(1)

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Realization of quantum cascade laser operating at room temperature
pp. 285-289(5)
Authors: Li, C-M.; Liu, F.Q.; Jin, P.; Wang, Z.G.

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InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
pp. 305-312(8)
Authors: Lu, T.C.; Tsai, J.Y.; Chu, J.T.; Chang, Y.S.; Wang, S.C.

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Studies of the facetting of the polished (100) face of CaF2
pp. 313-323(11)
Authors: Deuster, V.; Schick, M.; Kayser, T.; Dabringhaus, H.; Klapper, H.; Wandelt, K.

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Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs
pp. 331-338(8)
Authors: Youn, C.J.; Jeong, T.S.; Han, M.S.; Yang, J.W.; Lim, K.Y.; Yu, H.W.

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The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
pp. 339-344(6)
Authors: Bian, L.F.; Jiang, D.S.; Lu, S.L.; Huang, J.S.; Chang, K.; Li, L.H.; Harmand, J.C.

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Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
pp. 345-348(4)
Authors: Zheng, X.H.; Wang, Y.T.; Feng, Z.H.; Yang, H.; Chen, H.; Zhou, J.M.; Liang, J.W.

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Characterization of polycrystalline GaN grown on silica glass substrates
pp. 349-353(5)
Authors: Park, S.; Lim, S.; O, B.

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High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
pp. 354-358(5)
Authors: Feng, G.; Shen, X.M.; Zhu, J.J.; Zhang, B.S.; Zhao, D.G.; Wang, Y.T.; Yang, H.; Liang, J.W.

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Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals
pp. 359-363(5)
Authors: Yu, X.; Yang, D.; Ma, X.; Li, H.; Shen, Y.; Tian, D.; Li, L.; Que, D.

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Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
pp. 364-369(6)
Authors: Dong, H.W.; Zhao, Y.W.; Zeng, Y.P.; Jiao, J.H.; Li, J.M.; Lin, L.Y.

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Reactions at the liquid silicon/silica glass interface
pp. 370-381(12)
Authors: Schnurre, S.M.; Schmid-Fetzer, R.

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Charge transfer in CdTe at 200 and 300K
pp. 382-392(11)
Authors: Balamurugan, K.; Saravanan, R.; Asharamani, K.; Manimaran, P.; Mariyappan, S.; Srinivasan, N.; Ono, Y.; Isshiki, M.; Kajitani, T.

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Crystal growth of PbFCl by modified Bridgman method
pp. 393-396(4)
Authors: Chen, J.; Shen, D.; Mao, R.; Ren, G.; Yin, Z.

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Floating zone growth of high-quality SrTiO3 single crystals
pp. 397-404(8)
Authors: Nabokin, P.I.; Souptel, D.; Balbashov, A.M.

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Hydrothermal synthesis of MoS2 nanowires
pp. 418-422(5)
Authors: Li, W-J.; Shi, E.; Ko, J.; Chen, Z.; Ogino, H.; Fukuda, T.

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Energy transfer and annealing behavior of luminescence in Dy3+-doped PbWO4 single crystal
pp. 431-436(6)
Authors: Huang, Y.; Feng, X.; Zhu, W.; Man, Z.

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Dynamic process of crystallization of Sb2Se3 from Sb50Se50 amorphous film
pp. 444-449(6)
Authors: Kurumada, M.; Suzuki, H.; Kimura, Y.; Saito, Y.; Kaito, C.

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Characteristic crystal growth from amorphous WO3 film by vacuum heating
pp. 450-457(8)
Authors: Kimura, Y.; Kaito, C.

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Thermal and laser properties of Yb:YAl3(BO3)4 crystal
pp. 458-462(5)
Authors: Li, J.; Wang, J.; Cheng, X.; Hu, X.; Burns, P.A.; Dawes, J.M.

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Structure and thermal stability of MOCVD ZrO2 films on Si (100)
pp. 479-485(7)
Authors: Wu, X.; Landheer, D.; Graham, M.J.; Chen, H.; Huang, T.; Chao, T.

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The crystal growth and perfection of 2,4,6-trinitrotoluene
pp. 486-498(13)
Authors: Gallagher, H.G.; Vrcelj, R.M.; Sherwood, J.N.

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Induction time in crystallization of gas hydrates
pp. 499-515(17)
Authors: Kashchiev, D.; Firoozabadi, A.

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Molecular dynamics simulation of the crystallization of a liquid gold nanoparticle
pp. 558-564(7)
Authors: Shim J.-H.; Lee, S.; Lee, B.; Suh, J.; Whan Cho, Y.W.

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Experimental and numerical investigation of buoyancy driven convection during PDAMNA thin film growth
pp. 565-582(18)
Authors: Antar, B.N.; Paley, M.S.; Witherow, W.K.

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A study of growth and morphological features of TiOxNy thin films prepared by MOCVD
pp. 588-594(7)
Authors: Pradhan, S.K.; Reucroft, P.J.

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Author Index
pp. 595-598(4)

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Subject Index
pp. 599-600(2)

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