Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Realization of quantum cascade laser operating at room temperature
pp. 285-289(5)
Authors: Li C-M.; Liu F.Q.; Jin P.; Wang Z.G.

Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals
pp. 290-297(8)
Authors: Naoi H.; Shaw D.M.; Naoi Y.; Sakai S.; Collins G.J.

Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature
pp. 298-304(7)
Authors: Azuma Y.; Usami N.; Ujihara T.; Fujiwara K.; Sazaki G.; Murakami Y.; Nakajima K.

InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
pp. 305-312(8)
Authors: Lu T.C.; Tsai J.Y.; Chu J.T.; Chang Y.S.; Wang S.C.

Studies of the facetting of the polished (100) face of CaF₂
pp. 313-323(11)
Authors: Deuster V.; Schick M.; Kayser T.; Dabringhaus H.; Klapper H.; Wandelt K.

The influence of the intensity of melt stirring on the radial impurity distribution in proustite single crystals grown by the Stockbarger method using ACRT
pp. 324-330(7)
Authors: Distanov V.E.; Kirdyashkin A.G.

Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs
pp. 331-338(8)
Authors: Youn C.J.; Jeong T.S.; Han M.S.; Yang J.W.; Lim K.Y.; Yu H.W.

The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
pp. 339-344(6)
Authors: Bian L.F.; Jiang D.S.; Lu S.L.; Huang J.S.; Chang K.; Li L.H.; Harmand J.C.

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
pp. 345-348(4)
Authors: Zheng X.H.; Wang Y.T.; Feng Z.H.; Yang H.; Chen H.; Zhou J.M.; Liang J.W.

Characterization of polycrystalline GaN grown on silica glass substrates
pp. 349-353(5)
Authors: Park S.-E.; Lim S.-M.; O B.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
pp. 354-358(5)
Authors: Feng G.; Shen X.M.; Zhu J.J.; Zhang B.S.; Zhao D.G.; Wang Y.T.; Yang H.; Liang J.W.

Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals
pp. 359-363(5)
Authors: Yu X.; Yang D.; Ma X.; Li H.; Shen Y.; Tian D.; Li L.; Que D.

Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
pp. 364-369(6)
Authors: Dong H.W.; Zhao Y.W.; Zeng Y.P.; Jiao J.H.; Li J.M.; Lin L.Y.

Reactions at the liquid silicon/silica glass interface
pp. 370-381(12)
Authors: Schnurre S.M.; Schmid-Fetzer R.

Charge transfer in CdTe at 200 and 300K
pp. 382-392(11)
Authors: Balamurugan K.; Saravanan R.; Asharamani K.; Manimaran P.; Mariyappan S.; Srinivasan N.; Ono Y.; Isshiki M.; Kajitani T.

Crystal growth of PbFCl by modified Bridgman method
pp. 393-396(4)
Authors: Chen J.; Shen D.; Mao R.; Ren G.; Yin Z.

Floating zone growth of high-quality SrTiO₃ single crystals
pp. 397-404(8)
Authors: Nabokin P.I.; Souptel D.; Balbashov A.M.

Oriented growth of CdS nanoparticulate film with constant average particle size with thickness up to ~1m
pp. 405-408(4)
Authors: Roy U.N.; Kukreja L.M.

Synthesis and characterization of a micro scale zinc oxide-PVA composite by ultrasound irradiation and the effect of composite on the crystal growth of zinc oxide
pp. 409-417(9)
Authors: Kumar R.V.; Elgamiel R.; Koltypin Y.; Norwig J.; Gedanken A.

Hydrothermal synthesis of MoS₂ nanowires
pp. 418-422(5)
Authors: Li W-J.; Shi E.-W.; Ko J.-M.; Chen Z.-z.; Ogino H.; Fukuda T.

Synthesis and characterization of volatile metal -diketonate chelates of M(DPM)_n (M=Ce, Gd, Y, Zr, n=3,4) used as precursors for MOCVD
pp. 423-430(8)
Authors: Song H.; Jiang Y.; Xia C.; Meng G.; Peng D.

Energy transfer and annealing behavior of luminescence in Dy³⁺-doped PbWO₄ single crystal
pp. 431-436(6)
Authors: Huang Y.; Feng X.; Zhu W.; Man Z.

Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition
pp. 437-443(7)
Authors: Bang K.-H.; Hwang D.-K.; Lim S.-W.; Myoung J.-M.

Dynamic process of crystallization of Sb₂Se₃ from Sb₅₀Se₅₀ amorphous film
pp. 444-449(6)
Authors: Kurumada M.; Suzuki H.; Kimura Y.; Saito Y.; Kaito C.

Characteristic crystal growth from amorphous WO₃ film by vacuum heating
pp. 450-457(8)
Authors: Kimura Y.; Kaito C.

Thermal and laser properties of Yb:YAl₃(BO₃)₄ crystal
pp. 458-462(5)
Authors: Li J.; Wang J.; Cheng X.; Hu X.; Burns P.A.; Dawes J.M.

Phase relations around langasite (La₃Ga₅SiO₁₄) in the system La₂O₃-Ga₂O₃-SiO₂ in air
pp. 463-470(8)
Authors: Wang S.-Q.; Uda S.

Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition
pp. 471-478(8)
Authors: Danielsson O.; Forsberg U.; Janzen E.

Structure and thermal stability of MOCVD ZrO₂ films on Si (100)
pp. 479-485(7)
Authors: Wu X.; Landheer D.; Graham M.J.; Chen H.-W.; Huang T.-Y.; Chao T.-S.

The crystal growth and perfection of 2,4,6-trinitrotoluene
pp. 486-498(13)
Authors: Gallagher H.G.; Vrcelj R.M.; Sherwood J.N.

Induction time in crystallization of gas hydrates
pp. 499-515(17)
Authors: Kashchiev D.; Firoozabadi A.

Influence of polyvinylpyrrolidone on the precipitation of calcium carbonate and on the transformation of vaterite to calcite
pp. 516-524(9)
Authors: Wei H.; Shen Q.; Zhao Y.; Wang D.-J.; Xu D.-F.

Efficient adaptive phase field simulation of directional solidification of a binary alloy
pp. 525-537(13)
Authors: Lan C.W.; Chang Y.C.

Growth morphology of perfect and twinned face-centered-cubic crystals by Monte Carlo simulation
pp. 538-545(8)
Authors: Lee J.-W.; Hwang N.M.; Kim D.-Y.

Eutectic structures in the Ni-Co-Cr-Al system obtained by plasma spraying and by Bridgman growth
pp. 546-557(12)
Author: Fritscher K.

Molecular dynamics simulation of the crystallization of a liquid gold nanoparticle
pp. 558-564(7)
Authors: Shim J.-H.; Lee S.-C.; Lee B.-J.; Suh J.-Y.; Whan Cho Y.W.

Experimental and numerical investigation of buoyancy driven convection during PDAMNA thin film growth
pp. 565-582(18)
Authors: Antar B.N.; Paley M.S.; Witherow W.K.

Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide
pp. 583-587(5)
Authors: Qiu W.; Wang W.; Dong J.; Zhou F.; Zhang J.

A study of growth and morphological features of TiO_xN_y thin films prepared by MOCVD
pp. 588-594(7)
Authors: Pradhan S.K.; Reucroft P.J.

Author Index
pp. 595-598(4)

Subject Index
pp. 599-600(2)