Publisher: Elsevier

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Volume 250, Number 1, March 2003

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Editorial Board
pp. ii-ii(1)

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Editorial(s)
pp. viii-viii(1)
Author: Yeckel, A.

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Editorial(s)
pp. xi-xii(2)
Author: Yeckel, A.

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Editors' preface
pp. xiii-xiii(1)
Authors: Derby, J.J.; Kowach, G.; Scripa, R.; Yeckel, A.

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Aluminum nitride substrate growth by halide vapor transport epitaxy
pp. 1-6(6)
Authors: Bliss, D.F.; Tassev, V.L.; Weyburne, D.; Bailey, J.S.

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Growth and passivation of AlGaN/GaN heterostructures
pp. 7-13(7)
Authors: Shealy, J.R.; Prunty, T.R.; Chumbes, E.M.; Ridley, B.K.

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Epitaxy growth kinetics of GaN films
pp. 14-21(8)
Authors: Wu, B.; Ma, R.; Zhang, H.

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Theoretical study of in desorption during MBE growth of InGaAs/GaAs
pp. 22-28(7)
Authors: Coleiny, G.; Venkat, R.

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Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE
pp. 29-33(5)
Authors: Gopalakrishnan, N.; Baskar, K.; Kawanami, H.; Sakata, I.

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Numerical and experimental study of polysilicon deposition on silicon tubes
pp. 41-49(9)
Authors: Cai, D.; Zheng, L.L.; Wan, Y.; Hariharan, A.V.; Chandra, M.

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Growth and characterization of 200mm SI GaAs crystals grown by the VGF method
pp. 57-61(5)
Authors: Stenzenberger, J.; Bunger, T.; Borner, F.; Eichler, S.; Flade, T.; Hammer, R.; Jurisch, M.; Kretzer, U.; Teichert, S.; Weinert, B.

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Vertical Bridgman growth of calcium lithium niobium gallium garnet crystals
pp. 62-66(5)
Authors: Xu, X.W.; Chong, T.; Zhang, G.; Li, M.; Soo, L.H.; Xu, W.; Freeman, B.

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Processing of crystals with controlled lattice parameter gradient by the LHPG technique
pp. 67-71(5)
Authors: Barbosa, L.B.; Ardila, D.R.; Kakuno, E.M.; Camparin, R.H.; Cusatis, C.; Andreeta, J.P.

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Preparation of large single crystals of ANb2O6 (A=Ni, Co, Fe, Mn) by the floating-zone method
pp. 72-76(5)
Authors: Prabhakaran, D.; Wondre, F.R.; Boothroyd, A.T.

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Single crystal growth of Zn-doped CuO by the floating-zone method
pp. 77-82(6)
Authors: Prabhakaran, D.; Boothroyd, A.T.

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Growth and characterization of aliovalent ion-doped LiCaAlF6 single crystals
pp. 83-89(7)
Authors: Sato, H.; Machida, H.; Nikl, M.; Yoshikawa, A.; Fukuda, T.

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Congruency and morphology of Ca3(LiNbGa)5O12 garnet crystals grown by Czochralski method
pp. 90-93(4)
Authors: Zhang, G.; Li, M.; Chong, T.C.; Xu, X.; Freeman, B.

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Crystal growth of Yb3+-doped oxide single crystals for scintillator application
pp. 94-99(6)
Authors: Yoshikawa, A.; Nikl, M.; Ogino, H.; Lee, J.; Fukuda, T.

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Cellular arrays in binary alloys: from geometry to stability
pp. 100-106(7)
Authors: Pocheau, A.; Georgelin, M.

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Physical vapor transport growth of large AlN crystals
pp. 107-112(6)
Authors: Singh, N.B.; Berghmans, A.; Zhang, H.; Wait, T.; Clarke, R.C.; Zingaro, J.; Golombeck, J.C.

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Growth and characterization of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) single crystals
pp. 113-117(5)
Authors: Mohan Kumar, R.; Babu, D.R.; Ravi, G.; Jayavel, R.

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Nucleation kinetics, growth and characterization of dLAP, dLAP:KF and dLAP:NaN3 crystals
pp. 126-133(8)
Authors: Hameed, A.S.H.; Ravi, G.; Jayavel, R.; Ramasamy, P.

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Flux growth and morphology study of stoichiometric lithium niobate crystals
pp. 134-138(5)
Authors: Solanki, S.; Chong, T.; Xu, X.

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Crystal growth and superconductivity of LiTi2O4 and Li1+1/3Ti2-1/3O4
pp. 139-145(7)
Authors: Chen, C.; Spears, M.; Wondre, F.; Ryan, J.

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Effect of niobium substitution in stoichiometric lithium tantalate (SLT) single crystals
pp. 146-151(6)
Authors: Ravi, G.; Jayavel, R.; Takekawa, S.; Nakamura, M.; Kitamura, K.

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Formation of scatter particles in KDP (DKDP) crystals
pp. 152-156(5)
Authors: Sun, X.; Fang, C.; Gu, Q.; Wang, S.; Li, Y.N.; Xu, X.G.; Gao, Z.

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Growth aspects of semi-organic nonlinear optical l-arginine tetrafluoroborate single crystals
pp. 157-161(5)
Authors: Babu, D.R.; Jayaraman, D.; Kumar, R.M.; Ravi, G.; Jayavel, R.

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Kinetic Monte Carlo simulations of the surface roughening of binary systems
pp. 162-165(4)
Authors: Bentz, D.N.; Betush, W.J.; Jackson, K.A.

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The effect of stress fields from a probe tip on step motion using kinetic Monte Carlo
pp. 166-169(4)
Authors: Bentz, D.N.; Betush, W.J.; Jackson, K.A.

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Crystal growth with applied current
pp. 170-173(4)
Authors: Brush, L.N.; Murray, B.T.

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Magnetic field effects during liquid-encapsulated Czochralski growth of doped photonic semiconductor crystals
pp. 174-182(9)
Authors: Morton, J.L.; Ma, N.; Bliss, D.F.; Bryant, G.G.

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth
pp. 183-188(6)
Authors: Ivanov, N.G.; Korsakov, A.B.; Smirnov, E.M.; Khodosevitch, K.V.; Kalaev, V.V.; Makarov, Y.N.; Dornberger, E.; Virbulis, J.; von Ammon, W.

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Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals
pp. 189-194(6)
Authors: Bystrova, E.N.; Kalaev, V.V.; Smirnova, O.V.; Yakovlev, E.V.; Makarov, Y.N.

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Modeling analysis of VCz growth of GaAs bulk crystals using 3D unsteady melt flow simulations
pp. 195-202(8)
Authors: Yakovlev, E.V.; Smirnova, O.V.; Bystrova, E.N.; Kalaev, V.V.; Frank-Rotsch, C.; Neubert, M.; Rudolph, P.; Makarov, Y.N.

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Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations
pp. 203-208(6)
Authors: Kalaev, V.V.; Lukanin, D.P.; Zabelin, V.A.; Makarov, Y.N.; Virbulis, J.; Dornberger, E.; Ammon, W.v.

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A continuous Czochralski silicon crystal growth system
pp. 209-214(6)
Authors: Wang, C.; Zhang, H.; Wang, T.H.; Ciszek, T.F.

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Kinetics and heat transfer of CdZnTe Bridgman growth without wall contact
pp. 215-222(8)
Authors: Zhang, H.; Larson, D.J.; Wang, C.L.; Chen, T.H.

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Interlaboratory comparison of InGaAsP ex situ characterization
pp. 223-228(6)
Authors: Roshko, A.; Bertness, K.A.

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X-ray characterization of bulk AIN single crystals grown by the sublimation technique
pp. 244-250(7)
Authors: Raghothamachar, B.; Dudley, M.; Rojo, J.C.; Morgan, K.; Schowalter, L.J.

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Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD
pp. 256-261(6)
Authors: Lee S.-N.; Sakong, T.; Lee, W.; Paek, H.; Seon, M.; Lee, I.; Nam, O.; Park, Y.

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Detection of trace water in phosphine with cavity ring-down spectroscopy
pp. 262-268(7)
Authors: Lehman, S.Y.; Bertness, K.A.; Hodges, J.T.

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Thermal diffusivity, thermal conductivity, and specific heat capacity measurements of molten tellurium
pp. 269-273(5)
Authors: Zhu, S.; Li, C.; Su, C.; Lin, B.; Ban, H.; Scripa, R.N.; Lehoczky, S.L.

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Convective contamination in self-diffusivity experiments with an applied magnetic field
pp. 274-278(5)
Authors: Khine, Y.Y.; Banish, R.M.; Alexander, J.I.D.

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Author Index
pp. 279-282(4)

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Subject Index
pp. 283-284(2)

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