Journal of Crystal Growth

Contents proceedings ACCGE-14
pp. xiv-xvi(1)

Editorial Board
pp. ii-ii(1)

Editorial(s)
pp. xi-xii(1)
Author: Yeckel A.

Editors' preface
pp. xiii-xiii(1)
Authors: Derby J.J.; Kowach G.; Scripa R.; Yeckel A.

Editorial(s)
pp. viii-viii(1)
Author: Yeckel A.

American Association for Crystal Growth (2002-2005)
pp. ix-x
Author: Yeckel A.

Fourteenth American Conference on Crystal Growth and Epitaxy (ACCGE-14) - Seattle, Washington, USA, 4-9 August 2002
pp. vii-vii(1)

Aluminum nitride substrate growth by halide vapor transport epitaxy
pp. 1-6(6)
Authors: Bliss D.F.; Tassev V.L.; Weyburne D.; Bailey J.S.

Growth and passivation of AlGaN/GaN heterostructures
pp. 7-13(7)
Authors: Shealy J.R.; Prunty T.R.; Chumbes E.M.; Ridley B.K.

Epitaxy growth kinetics of GaN films
pp. 14-21(8)
Authors: Wu B.; Ma R.; Zhang H.

Theoretical study of in desorption during MBE growth of InGaAs/GaAs
pp. 22-28(7)
Authors: Coleiny G.; Venkat R.

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE
pp. 29-33(5)
Authors: Gopalakrishnan N.; Baskar K.; Kawanami H.; Sakata I.

High-quality La₃Ga_5.5Ta_0.5O₁₄ and La₃Ga_5.5Nb_0.5O₁₄ LPE films for oscillators and resonators
pp. 34-40(7)
Author: Klemenz C.

Numerical and experimental study of polysilicon deposition on silicon tubes
pp. 41-49(9)
Authors: Cai D.; Zheng L.L.; Wan Y.; Hariharan A.V.; Chandra M.

Large-grain (>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III-V solar cell applications
pp. 50-56(7)
Authors: Mauk M.G.; Balliet J.R.; Feyock B.W.

Growth and characterization of 200mm SI GaAs crystals grown by the VGF method
pp. 57-61(5)
Authors: Stenzenberger J.; Bunger T.; Borner F.; Eichler S.; Flade T.; Hammer R.; Jurisch M.; Kretzer U.; Teichert S.; Weinert B.

Vertical Bridgman growth of calcium lithium niobium gallium garnet crystals
pp. 62-66(5)
Authors: Xu X.W.; Chong T.-C.; Zhang G.; Li M.; Soo L.H.; Xu W.; Freeman B.

Processing of crystals with controlled lattice parameter gradient by the LHPG technique
pp. 67-71(5)
Authors: Barbosa L.B.; Ardila D.R.; Kakuno E.M.; Camparin R.H.; Cusatis C.; Andreeta J.P.

Preparation of large single crystals of ANb₂O₆ (A=Ni, Co, Fe, Mn) by the floating-zone method
pp. 72-76(5)
Authors: Prabhakaran D.; Wondre F.R.; Boothroyd A.T.

Single crystal growth of Zn-doped CuO by the floating-zone method
pp. 77-82(6)
Authors: Prabhakaran D.; Boothroyd A.T.

Growth and characterization of aliovalent ion-doped LiCaAlF₆ single crystals
pp. 83-89(7)
Authors: Sato H.; Machida H.; Nikl M.; Yoshikawa A.; Fukuda T.

Congruency and morphology of Ca₃(LiNbGa)₅O₁₂ garnet crystals grown by Czochralski method
pp. 90-93(4)
Authors: Zhang G.; Li M.; Chong T.C.; Xu X.; Freeman B.

Crystal growth of Yb³⁺-doped oxide single crystals for scintillator application
pp. 94-99(6)
Authors: Yoshikawa A.; Nikl M.; Ogino H.; Lee J.-H.; Fukuda T.

Cellular arrays in binary alloys: from geometry to stability
pp. 100-106(7)
Authors: Pocheau A.; Georgelin M.

Physical vapor transport growth of large AlN crystals
pp. 107-112(6)
Authors: Singh N.B.; Berghmans A.; Zhang H.; Wait T.; Clarke R.C.; Zingaro J.; Golombeck J.C.

Growth and characterization of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) single crystals
pp. 113-117(5)
Authors: Mohan Kumar R.; Babu D.R.; Ravi G.; Jayavel R.

Effects of chemical compositions on the growth of relaxor ferroelectric Pb(Sc_1/2Nb_1/2)_1-xTi_xO₃ single crystals
pp. 118-125(8)
Authors: Bing Y.-H.; Ye Z.-G.

Nucleation kinetics, growth and characterization of dLAP, dLAP:KF and dLAP:NaN₃ crystals
pp. 126-133(8)
Authors: Hameed A.S.H.; Ravi G.; Jayavel R.; Ramasamy P.

Flux growth and morphology study of stoichiometric lithium niobate crystals
pp. 134-138(5)
Authors: Solanki S.; Chong T.-C.; Xu X.

Crystal growth and superconductivity of LiTi₂O₄ and Li_1+1/3Ti_2-1/3O₄
pp. 139-145(7)
Authors: Chen C.; Spears M.; Wondre F.; Ryan J.

Effect of niobium substitution in stoichiometric lithium tantalate (SLT) single crystals
pp. 146-151(6)
Authors: Ravi G.; Jayavel R.; Takekawa S.; Nakamura M.; Kitamura K.

Formation of scatter particles in KDP (DKDP) crystals
pp. 152-156(5)
Authors: Sun X.; Fang C.-s.; Gu Q.-t.; Wang S.-L.; Li Y.N.; Xu X.G.; Gao Z.-S.

Growth aspects of semi-organic nonlinear optical l-arginine tetrafluoroborate single crystals
pp. 157-161(5)
Authors: Babu D.R.; Jayaraman D.; Kumar R.M.; Ravi G.; Jayavel R.

Kinetic Monte Carlo simulations of the surface roughening of binary systems
pp. 162-165(4)
Authors: Bentz D.N.; Betush W.J.; Jackson K.A.

The effect of stress fields from a probe tip on step motion using kinetic Monte Carlo
pp. 166-169(4)
Authors: Bentz D.N.; Betush W.J.; Jackson K.A.

Crystal growth with applied current
pp. 170-173(4)
Authors: Brush L.N.; Murray B.T.

Magnetic field effects during liquid-encapsulated Czochralski growth of doped photonic semiconductor crystals
pp. 174-182(9)
Authors: Morton J.L.; Ma N.; Bliss D.F.; Bryant G.G.

Analysis of magnetic field effect on 3D melt flow in CZ Si growth
pp. 183-188(6)
Authors: Ivanov N.G.; Korsakov A.B.; Smirnov E.M.; Khodosevitch K.V.; Kalaev V.V.; Makarov Y.N.; Dornberger E.; Virbulis J.; von Ammon W.

Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals
pp. 189-194(6)
Authors: Bystrova E.N.; Kalaev V.V.; Smirnova O.V.; Yakovlev E.V.; Makarov Y.N.

Modeling analysis of VCz growth of GaAs bulk crystals using 3D unsteady melt flow simulations
pp. 195-202(8)
Authors: Yakovlev E.V.; Smirnova O.V.; Bystrova E.N.; Kalaev V.V.; Frank-Rotsch C.; Neubert M.; Rudolph P.; Makarov Y.N.

Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations
pp. 203-208(6)
Authors: Kalaev V.V.; Lukanin D.P.; Zabelin V.A.; Makarov Y.N.; Virbulis J.; Dornberger E.; Ammon W.v.

A continuous Czochralski silicon crystal growth system
pp. 209-214(6)
Authors: Wang C.; Zhang H.; Wang T.H.; Ciszek T.F.

Kinetics and heat transfer of CdZnTe Bridgman growth without wall contact
pp. 215-222(8)
Authors: Zhang H.; Larson D.J.; Wang C.L.; Chen T.H.

Interlaboratory comparison of InGaAsP ex situ characterization
pp. 223-228(6)
Authors: Roshko A.; Bertness K.A.

Statistical comparison between inductively coupled plasma-mass spectrometry, and Hall effect techniques using antimony-doped germanium
pp. 229-235(7)
Authors: Keefer L.A.; Matthiesen D.H.

Effect of aging on the growth of intermetallic compounds at the interface of Sn-9Zn-xAg/Cu substrates
pp. 236-243(8)
Authors: Chang T.-C.; Wang M.-C.; Hon M.-H.

X-ray characterization of bulk AIN single crystals grown by the sublimation technique
pp. 244-250(7)
Authors: Raghothamachar B.; Dudley M.; Rojo J.C.; Morgan K.; Schowalter L.J.

Optical properties of Czochralski grown rare-earth garnet single crystals in solid solution
pp. 251-255(5)
Authors: Kimura H.; Miyazaki A.

Characterization of optical and crystal qualities in In_xGa_1-xN/In_yGa_1-yN multi-quantum wells grown by MOCVD
pp. 256-261(6)
Authors: Lee S.-N.; Sakong T.; Lee W.; Paek H.; Seon M.; Lee I.-H.; Nam O.; Park Y.

Detection of trace water in phosphine with cavity ring-down spectroscopy
pp. 262-268(7)
Authors: Lehman S.Y.; Bertness K.A.; Hodges J.T.

Thermal diffusivity, thermal conductivity, and specific heat capacity measurements of molten tellurium
pp. 269-273(5)
Authors: Zhu S.; Li C.; Su C.-H.; Lin B.; Ban H.; Scripa R.N.; Lehoczky S.L.

Convective contamination in self-diffusivity experiments with an applied magnetic field
pp. 274-278(5)
Authors: Khine Y.Y.; Banish R.M.; Alexander J.I.D.

Author Index
pp. 279-282(4)

Subject Index
pp. 283-284(2)