Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Rostislaw Kaischew - 1908-2002
pp. v-vi(2)
Author: Mutaftschiev B.

Temperature dependence of Vickers hardness for Cd_1-xMn_xTe (0=<x=<0.82) single crystals
pp. 391-395(5)
Authors: Hwang Y.; Kim H.; Cho S.; Um Y.; Park H.

Growth of Mg-doped GaN micro-crystals using MgCl₂ in direct reaction of Ga and NH₃
pp. 396-403(8)
Authors: Lee S.H.; Ahn S.H.; Kim K.C.; Suh E.K.; Nahm K.S.

Viscosity of molten silicon and the factors affecting measurement
pp. 404-415(12)
Authors: Sato Y.; Kameda Y.; Nagasawa T.; Sakamoto T.; Moriguchi S.; Yamamura T.; Waseda Y.

Shape evolution of InAs quantum dots during overgrowth
pp. 416-421(6)
Authors: Songmuang R.; Kiravittaya S.; Schmidt O.G.

Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs
pp. 422-428(7)
Authors: Ghosh B.K.; Tanikawa T.; Hashimoto A.; Yamamoto A.; Ito Y.

Control of crystal-melt interface shape during horizontal Bridgman growth of InSb crystal using solutal Marangoni convection
pp. 429-436(8)
Authors: Arafune K.; Kodera K.; Kinoshita A.; Hirata A.

Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence
pp. 437-444(8)
Authors: McKay H.A.; Feenstra R.M.; Poole P.J.; Aers G.C.

On the use of available theoretical models for the interpretation of capillary phenomena of molten metals in the presence of oxygen
pp. 445-454(10)
Authors: Ratto M.; Fiori L.; Ricci E.; Arato E.

Strain relaxation in In_xGa_1-xN epitaxial films grown coherently on GaN
pp. 455-460(6)
Authors: Park S.-E.; O B.; Lee C.-R.

Growth behaviours and properties of the ZnO:Al films prepared by reactive mid-frequency magnetron sputtering
pp. 461-469(9)
Authors: Hong R.J.; Jiang X.; Heide G.; Szyszka B.; Sittinger V.; Werner W.

Growth of Ga_1-xIn_xSb alloy crystals by conventional Czochralski pulling
pp. 470-476(7)
Authors: Tsaur S.C.; Kou S.

Kinetically limited quantum dot formation on AlAs(100) surfaces
pp. 477-482(6)
Authors: Pierz K.; Ma Z.; Keyser U.F.; Haug R.J.

Growth and properties of Li₂B₄O₇ single crystals doped with Cu, Mn and Mg
pp. 483-486(4)
Authors: Park K.-S.; Ahn J.K.; Kim D.J.; Kim H.K.; Hwang Y.H.; Kim D.S.; Park M.H.; Park Y.; Yoon J.-J.; Leem J.-Y.

Influence of SiN buffer layer in GaN epilayers
pp. 487-491(5)
Authors: Park S.-E.; Lim S.-M.; Lee C.-R.; Kim C.S.; O B.

Laser performance of Nd: GdVO₄ crystal at 1.34m and intracavity double red laser
pp. 492-496(5)
Authors: Zhang H.; Du C.; Wang J.; Hu X.; Xu X.; Dong C.; Liu J.; Kong H.; Jiang H.; Han R.; Shao Z.; Jiang M.

Epitaxially grown aluminum films with titanium intermediate layer on rotated Y-X LiNbO₃ piezoelectric single crystal substrates
pp. 497-501(5)
Authors: Nakagawara O.; Saeki M.; Watanabe M.; Inoue K.; Hagi T.; Makino T.; Arai S.

Effect of highest temperature invoked on the crystallization of LiB₃O₅ from boron-rich solution
pp. 502-506(5)
Authors: Sabharwal S.C.; Tiwari B.; Sangeeta

Crystallographic modifications of physical properties of lithium niobate crystals by the cation location
pp. 507-513(7)
Authors: Xue D.; Kitamura K.

Transient temperature phenomena during sublimation growth of silicon carbide single crystals
pp. 514-522(9)
Authors: Klein O.; Philip P.

Contactless density measurement of superheated and undercooled liquid Y₃Al₅O₁₂
pp. 523-530(8)
Authors: Paradis P.-F.; Yu J.; Ishikawa T.; Aoyama T.; Yoda S.; Weber J.K.R.

Effects of ultrasound on crystallization behavior and ferroelectric properties of sol-gel-derived Pb(Zr, Ti)O₃ thin films
pp. 531-537(7)
Authors: Lee J.-H.; Kim N.-K.; Park B.-O.

The effects of rapid thermal annealing on the optical properties of Zn_1-xMn_xSe epilayer grown by MOCVD on GaAs substrate
pp. 538-543(6)
Authors: Lu S.L.; Wang J.N.; Huang J.S.; Bian L.F.; Jiang D.S.; Yang C.L.; Dai J.M.; Ge W.K.; Wang Y.Q.; Zhang J.Y.; Shen D.Z.

Faceted vapor grown PbS single crystals under different sulfur vapor pressures
pp. 544-548(5)
Authors: Abe S.; Masumoto K.

Self-template route to CdS hollow spheres and in situ conversion to CdS/Ag₂S composite materials
pp. 549-552(4)
Authors: Shao M.; Wang D.; Hu B.; Yu G.; Qian Y.

Growth and characterization of a new nonlinear optical l-histidine diphosphate single crystal
pp. 553-556(4)
Authors: Ittyachan R.; Sagayaraj P.

Growth and characterization of a new promising NLO L-histidine bromide crystal
pp. 557-560(4)
Authors: Ittyachan R.; Sagayaraj P.

Morphological control of precipitated calcite obtained by adjusting the electrical conductivity in the Ca(OH)₂-H₂O-CO₂ system
pp. 561-571(11)
Authors: Garca-Carmona J.; Morales J.G.; Clemente R.R.

The effect of organic ligands on the crystallinity of calcium phosphate
pp. 572-583(12)
Authors: van der Houwen J.A.M.; Cressey G.; Cressey B.A.; Valsami-Jones E.

The role of phosphonate speciation on the inhibition of barium sulfate precipitation
pp. 584-593(10)
Authors: Jones F.; Stanley A.; Oliveira A.; Rohl A.L.; Reyhani M.M.; Parkinson G.M.; Ogden M.I.

Growth of K_0.4WO₃ whiskers via a pressure-relief-assisted hydrothermal process
pp. 594-599(6)
Authors: Yang X.-g.; Li C.; Mo M.-S.; Zhan J.-h.; Yu W.-c.; Yan Y.; Qian Y.-T.

Morphology of and dislocation movement in n-C₄₀H₈₂ paraffin crystals grown from solution
pp. 600-613(14)
Authors: Plomp M.; van Enckevort W.J.P.; Hoof P.J.C.M.v.; Streek C.J.v.d.

Constant composition kinetics study of carbonated apatite dissolution
pp. 614-624(11)
Authors: Tang R.; Henneman Z.J.; Nancollas G.H.

Containerless solidification of highly undercooled Al₂O₃-ZrO₂ eutectic melts on an aero-acoustic levitator
pp. 625-633(9)
Authors: Li M.; Nagashio K.; Kuribayashi K.

Erratum to ''Chairpersons' Preface'' - Journal of Crystal Growth 237-239 (2002) xiv-xvii
pp. 636-636(1)
Author: Nishinaga T.

Author Index
pp. 637-643(7)

Subject Index
pp. 644-646(3)