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Publisher: Elsevier

Volume 249, Number 3, March 2003

Editorial Board
pp. ii-ii(1)

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Rostislaw Kaischew - 1908-2002
pp. v-vi(2)
Author: Mutaftschiev, B.

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Growth of Mg-doped GaN micro-crystals using MgCl2 in direct reaction of Ga and NH3
pp. 396-403(8)
Authors: Lee, S.H.; Ahn, S.H.; Kim, K.C.; Suh, E.K.; Nahm, K.S.

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Viscosity of molten silicon and the factors affecting measurement
pp. 404-415(12)
Authors: Sato, Y.; Kameda, Y.; Nagasawa, T.; Sakamoto, T.; Moriguchi, S.; Yamamura, T.; Waseda, Y.

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Shape evolution of InAs quantum dots during overgrowth
pp. 416-421(6)
Authors: Songmuang, R.; Kiravittaya, S.; Schmidt, O.G.

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Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs
pp. 422-428(7)
Authors: Ghosh, B.K.; Tanikawa, T.; Hashimoto, A.; Yamamoto, A.; Ito, Y.

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Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN
pp. 455-460(6)
Authors: Park, S.; O, B.; Lee, C.

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Growth behaviours and properties of the ZnO:Al films prepared by reactive mid-frequency magnetron sputtering
pp. 461-469(9)
Authors: Hong, R.J.; Jiang, X.; Heide, G.; Szyszka, B.; Sittinger, V.; Werner, W.

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Kinetically limited quantum dot formation on AlAs(100) surfaces
pp. 477-482(6)
Authors: Pierz, K.; Ma, Z.; Keyser, U.F.; Haug, R.J.

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Growth and properties of Li2B4O7 single crystals doped with Cu, Mn and Mg
pp. 483-486(4)
Authors: Park K.-S.; Ahn, J.K.; Kim, D.J.; Kim, H.K.; Hwang, Y.H.; Kim, D.S.; Park, M.H.; Park, Y.; Yoon, J.; Leem, J.

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Influence of SiN buffer layer in GaN epilayers
pp. 487-491(5)
Authors: Park, S.; Lim, S.; Lee, C.; Kim, C.S.; O, B.

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Laser performance of Nd: GdVO4 crystal at 1.34m and intracavity double red laser
pp. 492-496(5)
Authors: Zhang, H.; Du, C.; Wang, J.; Hu, X.; Xu, X.; Dong, C.; Liu, J.; Kong, H.; Jiang, H.; Han, R.; Shao, Z.; Jiang, M.

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Epitaxially grown aluminum films with titanium intermediate layer on θ rotated Y-X LiNbO3 piezoelectric single crystal substrates
pp. 497-501(5)
Authors: Nakagawara, O.; Saeki, M.; Watanabe, M.; Inoue, K.; Hagi, T.; Makino, T.; Arai, S.

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Effect of highest temperature invoked on the crystallization of LiB3O5 from boron-rich solution
pp. 502-506(5)
Authors: Sabharwal, S.C.; Tiwari, B.; Sangeeta

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Contactless density measurement of superheated and undercooled liquid Y3Al5O12
pp. 523-530(8)
Authors: Paradis P.-F.; Yu, J.; Ishikawa, T.; Aoyama, T.; Yoda, S.; Weber, J.K.R.

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The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
pp. 538-543(6)
Authors: Lu, S.L.; Wang, J.N.; Huang, J.S.; Bian, L.F.; Jiang, D.S.; Yang, C.L.; Dai, J.M.; Ge, W.K.; Wang, Y.Q.; Zhang, J.Y.; Shen, D.Z.

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Self-template route to CdS hollow spheres and in situ conversion to CdS/Ag2S composite materials
pp. 549-552(4)
Authors: Shao, M.; Wang, D.; Hu, B.; Yu, G.; Qian, Y.

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Growth and characterization of a new promising NLO L-histidine bromide crystal
pp. 557-560(4)
Authors: Ittyachan, R.; Sagayaraj, P.

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The effect of organic ligands on the crystallinity of calcium phosphate
pp. 572-583(12)
Authors: van der Houwen, J.A.M.; Cressey, G.; Cressey, B.A.; Valsami-Jones, E.

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The role of phosphonate speciation on the inhibition of barium sulfate precipitation
pp. 584-593(10)
Authors: Jones, F.; Stanley, A.; Oliveira, A.; Rohl, A.L.; Reyhani, M.M.; Parkinson, G.M.; Ogden, M.I.

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Growth of K0.4WO3 whiskers via a pressure-relief-assisted hydrothermal process
pp. 594-599(6)
Authors: Yang, X.; Li, C.; Mo, M.; Zhan, J.; Yu, W.; Yan, Y.; Qian Y.-T.

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Morphology of and dislocation movement in n-C40H82 paraffin crystals grown from solution
pp. 600-613(14)
Authors: Plomp, M.; van Enckevort, W.J.P.; Hoof, P.J.C.M.v.; Streek, C.J.v.d.

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Constant composition kinetics study of carbonated apatite dissolution
pp. 614-624(11)
Authors: Tang, R.; Henneman, Z.J.; Nancollas, G.H.

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Author Index
pp. 637-643(7)

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Subject Index
pp. 644-646(3)

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