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Volume 249, Number 1, February 2003

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Editorial Board
pp. ii-ii(1)

Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation
pp. 1-8(8)
Authors: Luo M.C.; Li J.M.; Wang Q.M.; Sun G.S.; Wang L.; Li G.R.; Zeng Y.P.; Lin L.Y.

Optical properties of the ZnSe/GaAs heteroepitaxial layers grown by hot wall epitaxy
pp. 9-14(6)
Authors: Jeong T.S.; Yu P.Y.; Hong K.J.; Kim T.S.; Youn C.J.; Choi Y.D.; Lee K.S.; O B.; Yoon M.Y.

Influence of a ZnMnTe buffer layer on the growth of ZnTe on (001)GaAs by MOVPE
pp. 15-22(8)
Authors: Zozime A.; Seibt M.; Ertel J.; Tromson-Carli A.; Druilhe R.; Grattepain C.; Triboulet R.

The influence of point defect on the behavior of oxygen precipitation in CZ-Si wafers
pp. 37-43(7)
Authors: Hwang D.-H.; Hur S.-M.; Lee K.-H.

GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3
pp. 59-64(6)
Authors: Tanaka A.; Funayama Y.; Murakami T.; Katsuno H.

Growth and characterization of In0.28Ga0.72N/GaN multiple-quantum wells on Si(111)
pp. 65-71(7)
Authors: Lee S.-J.; Jang S.-H.; Lee S.-S.; Lee C.-R.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001) sapphire substrate
pp. 72-77(6)
Authors: Li D.; Dong X.; Huang J.; Liu X.; Xu Z.; Wang X.; Zhang Z.; Wang Z.

MBE growth mode and C incorporation of GeC epilayers on Si(001) substrates using an arc plasma gun as a novel C source
pp. 78-86(9)
Authors: Okinaka M.; Hamana Y.; Tokuda T.; Ohta J.; Nunoshita M.

Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
pp. 87-99(13)
Authors: Kalaev V.V.; Evstratov I.Y.; Makarov Y.N.

GaN nanocrystals from oxygen and nitrogen-based precursors
pp. 106-120(15)
Authors: Kisailus D.; Choi J.H.; Lange F.F.

Seed-free growth of (111) oriented CdTe and CdZnTe crystals by solid-state recrystallization
pp. 121-127(7)
Authors: Hassani S.; Lusson A.; Tromson-Carli A.; Triboulet R.

Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy
pp. 128-143(16)
Authors: Song J.S.; Chang J.H.; Oh D.C.; Kim J.J.; Cho M.W.; Makino H.; Hanada T.; Yao T.

Growth of nanoscale InGaN self-assembled quantum dots
pp. 144-148(5)
Authors: Ji L.W.; Su Y.K.; Chang S.J.; Wu L.W.; Fang T.H.; Chen J.F.; Tsai T.Y.; Xue Q.K.; Chen S.C.

A new liquid-source version of liquid phase electroepitaxy
pp. 149-158(10)
Author: Gevorkyan V.A.

Growth and spectroscopic properties of Er3+/Yb3+:LaCa4O(BO3)3 crystals
pp. 159-162(4)
Authors: Lu Y.; Hu Z.; Lin Z.; Wang G.

The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy
pp. 163-166(4)
Authors: Zhao D.; Liu Y.; Shen D.; Zhang J.; Lu Y.; Fan X.

Growth and spectral properties of Nd3+:KLa(WO4)2 crystal
pp. 167-171(5)
Authors: Han X.; Wang G.

Growth of large birefringent YVO4 crystal
pp. 176-178(3)
Authors: Wu S.; Wang G.; Xie J.; Wu X.; Li G.

Effects of RF power on properties of ZnO thin films grown on Si (001) substrate by plasma enhanced chemical vapor deposition
pp. 179-185(7)
Authors: Li B.S.; Liu Y.C.; Shen D.Z.; Zhang J.Y.; Lu Y.M.; Fan X.W.

High-quality [100] and [110] YBa2Cu3O7-delta films for Josephson tunnelling
pp. 186-190(5)
Authors: Kim S.J.; Grison X.; Passerieux G.; Ayache J.; Lesueur J.; Lalu F.

Growth and spectroscopic properties of Cr3+-doped LaSc3(BO3)4
pp. 191-194(4)
Authors: Long X.; Wang G.; Han T.P.J.

Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(100) substrate
pp. 201-207(7)
Authors: Lee J.-S.; Kang M.-I.; Kim S.; Lee M.-S.; Lee Y.-K.

Homoepitaxial growth of 4H-SiC(0338) and nitrogen doping by chemical vapor deposition
pp. 208-215(8)
Authors: Kimoto T.; Hirao T.; Nakazawa S.; Shiomi H.; Matsunami H.

Bulk crystal growth of cubic silicon carbide by sublimation epitaxy
pp. 216-221(6)
Authors: Furusho T.; Sasaki M.; Ohshima S.; Nishino S.

Growth of La1-xSr1+xMnO4 single crystals and characterization by scattering techniques
pp. 222-229(8)
Authors: Reutler P.; Friedt O.; Buchner B.; Braden M.; Revcolevschi A.

Crystal growth and properties of Ca3NbGa3Si2O14 single crystals
pp. 240-244(5)
Authors: Wang Z.; Cheng X.; Yuan D.; Pan L.; Guo S.; Xu D.; Lv M.

MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)
pp. 262-274(13)
Authors: Bchir O.J.; Johnston S.W.; Cuadra A.C.; Anderson T.J.; Ortiz C.G.; Brooks B.C.; Powell D.H.; McElwee-White L.

Growth of hex-pod-like Cu2O whisker under hydrothermal conditions
pp. 294-300(7)
Authors: Chen Z.-Z.; Shi E.-W.; Zheng Y.-Q.; Li W.-J.; Xiao B.; Zhuang J.-Y.

Studies on the growth and characterization of p-hydroxyacetophenone single crystals
pp. 309-315(7)
Authors: Vijayan N.; Ramesh Babu R.; Gunasekaran M.; Gopalakrishnan R.; Kumaresan R.; Ramasamy P.; Lan C.W.

Synthesis, growth and characterization of nonlinear optical material: l-arginine fluoride
pp. 316-320(5)
Authors: Haja Hameed A.S.; Anandan P.; Jayavel R.; Ramasamy P.; Ravi G.

Morphological study of magnesium hydroxide nanoparticles precipitated in dilute aqueous solution
pp. 321-330(10)
Authors: Henrist C.; Mathieu J.-P.; Vogels C.; Rulmont A.; Cloots R.

Large-scale synthesis of (Bi(Bi2S3)9I3)0.667 submicrometer needle-like crystals via a novel polyol route
pp. 331-334(4)
Authors: Shen G.; Chen D.; Tang K.; Huang L.; Qian Y.

Effect of a magnetic field on the surface topography of l-alanine crystals
pp. 335-340(6)
Authors: Guzman L.A.; Ogawa K.; Suzuki E.; Shimizu K.

HRTEM Study of yttrium oxide particles in ODS steels for fusion reactor application
pp. 381-387(7)
Authors: Klimiankou M.; Lindau R.; Moslang A.

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