Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Conference information
pp. vii-viii(2)

Preface
pp. ix-x(2)

Contents
pp. xi-xvii(7)

Advances in the modeling of MOVPE processes
pp. 1-7(7)
Author: Karpov S.Y.

Structure and energetics of nitride surfaces under MOCVD growth conditions
pp. 8-13(6)
Authors: Van de Walle C.G.; Neugebauer J.

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors
pp. 14-19(6)
Authors: Oleynik N.; Adam M.; Krtschil A.; Blasing J.; Dadgar A.; Bertram F.; Forster D.; Diez A.; Greiling A.; Seip M.; Christen J.; Krost A.

MOVPE growth of ZnO using various oxygen precursors
pp. 20-24(5)
Authors: Kirchner C.; Gruber T.; Reusz F.; Thonke K.; Waag A.; Gieszen C.; Heuken M.

Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy
pp. 25-30(6)
Authors: Ogata K.; Maejima K.; Fujita S.; Fujita S.

A quantum chemistry investigation of the gas phase and surface chemistry of the MOCVD of ZnSe
pp. 31-36(6)
Authors: Moscatelli D.; Cavallotti C.; Masi M.; Carra S.

MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates
pp. 37-42(6)
Authors: Lovergine N.; Traversa M.; Prete P.; Yoshino K.; Ozeki M.; Pentimalli M.; Tapfer L.; Mancini A.M.

Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy
pp. 43-49(7)
Authors: Tanaka T.; Hayashida K.; Wang S.; Guo Q.; Nishio M.; Ogawa H.

Growth and p-type doping of ZnSeTe on InP
pp. 50-55(6)
Authors: Strassburg M.; Strassburg M.; Schulz O.; Pohl U.W.; Hoffmann A.; Bimberg D.; Kontos A.G.; Raptis Y.S.

Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE
pp. 56-61(6)
Authors: Prete P.; Lovergine N.; Luccio T.D.; Tapfer L.; Mancini A.M.

MOVPE growth and characterization of hexagonal CdS epilayers and CdS-based QW structures on CdS and ZnCdS substrates
pp. 62-66(5)
Authors: Kozlovsky V.I.; Martovitsky V.P.; Sannikov D.A.; Kuznetsov P.I.; Yakushcheva G.G.; Jitov V.A.

Contamination control in gas delivery systems for MOCVD
pp. 67-71(5)
Authors: Watanabe T.; Funke H.H.; Torres R.; Raynor M.W.; Vininski J.; Houlding V.H.

Optimization of palladium cell for reliable purification of hydrogen in MOCVD
pp. 72-76(5)
Authors: Funke H.H.; Raynor M.W.; Houlding V.H.; Bossard P.; Fabiano P.; Stucky D.

Sub-atmospheric pressure gas sources for bulk storage and delivery of arsine and phosphine to MOCVD tools
pp. 77-81(5)
Authors: Raynor M.W.; Houlding V.H.; Funke H.H.; Frye R.; Dietz J.A.

GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium
pp. 82-85(4)
Authors: Grant W.B.; Amamchyan A.; Stennick R.S.; Shenai D.V.

Correlation of reduced oxygen content in precursors with improved MOVPE layer quality
pp. 86-90(5)
Authors: Rushworth S.A.; Smith L.M.; Ravetz M.S.; Coward K.M.; Odedra R.; Kanjolia R.; Bland S.W.; Dimroth F.; Bett A.W.

Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III-V compounds
pp. 91-98(8)
Authors: Shenai D.V.; Timmons M.L.; DiCarlo R.L.; Lemnah G.K.; Stennick R.S.

Vapor pressure of metal organic precursors
pp. 99-107(9)
Authors: Fulem M.; Ruzicka K.; Ruzicka V.; Hulicius E.; Simecek T.; Melichar K.; Pangrac J.; Rushworth S.A.; Smith L.M.

MOVPE homoepitaxial growth used to study the effect of aging and chemical treatment on GaAs substrates
pp. 108-113(6)
Authors: Allwood D.; Mason N.; Mowbray A.; Palmer R.

Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
pp. 114-118(5)
Authors: Bulaev P.V.; Marmalyuk A.A.; Padalitsa A.A.; Nikitin D.B.; Zalevsky I.D.; Kapitonov V.A.; Nikolaev D.N.; Pikhtin N.A.; Lyutetskiy A.V.; Tarasov I.S.

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
pp. 119-123(5)
Authors: Longo M.; Magnanini R.; Parisini A.; Tarricone L.; Carbognani A.; Bocchi C.; Gombia E.

Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl₃ and characterization of the epilayers
pp. 124-129(6)
Authors: Uchida K.; Bhunia S.; Sugiyama N.; Furiya M.; Katoh M.; Katoh S.; Nozaki S.; Morisaki H.

Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
pp. 130-133(4)
Authors: Neumann S.; Prost W.; Tegude F.-J.

Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE
pp. 134-138(5)
Authors: Ribeiro M.L.; Souza P.L.; Tribuzy C.V.-B.; Pires M.P.; Yavich B.

X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
pp. 139-143(5)
Authors: Velling P.; Keiper D.; Brennemann A.; Agethen M.; Janssen G.; Bertenburg R.M.

Oxygen doping of AlGaAs in MOVPE using triethoxyarsine
pp. 144-148(5)
Author: Fujita Y.

High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus
pp. 149-152(4)
Authors: Carta G.; D'Andrea A.; Fernandez-Alonso F.; Franco A.; El Habra N.; Righini M.; Rossetto G.; Schiumarini D.; Selci S.; Zanella P.

MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications
pp. 153-157(5)
Authors: Keiper D.; Velling P.; Brennemann A.; Agethen M.; van den Berg C.; Bertenburg R.M.; Schineller B.; Heuken M.

MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
pp. 158-162(5)
Authors: Neumann S.; Spieler J.; Blache R.; Kiesel P.; Prost W.; Dohler G.H.; Tegude F.-J.

Evaluation of copper organometallic sources for CuGaSe₂ photovoltaic applications
pp. 163-168(6)
Authors: Artaud-Gillet M.C.; Duchemin S.; Odedra R.; Orsal G.; Rega N.; Rushworth S.; Siebentritt S.

MOVPE of epitaxial CuInSe₂ on GaAs
pp. 169-174(6)
Authors: Rega N.; Siebentritt S.; Beckers I.; Beckmann J.; Albert J.; Lux-Steiner M.

Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia
pp. 175-179(5)
Authors: Fainer N.I.; Rumyantsev Y.M.; Golubenko A.N.; Kosinova M.L.; Kuznetsov F.A.

Property design of Bi₄Ti₃O₁₂-based thin films using a site-engineered concept
pp. 180-185(6)
Authors: Funakubo H.; Watanabe T.; Kojima T.; Sakai T.; Noguchi Y.; Miyayama M.; Osada M.; Kakihana M.; Saito K.

MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)
pp. 186-193(8)
Authors: Zorn M.; Knigge A.; Zeimer U.; Klein A.; Kissel H.; Weyers M.; Trankle G.

In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy
pp. 194-200(7)
Authors: Haberland K.; Zorn M.; Klein A.; Bhattacharya A.; Weyers M.; Zettler J.-T.; Richter W.

Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance
pp. 201-205(5)
Authors: Park K.; Hwang H.; Kang J.-H.; Yoon S.; Kim Y.D.; Yoon E.

Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100)
pp. 206-210(5)
Authors: Toben L.; Hannappel T.; Eichberger R.; Moller K.; Gundlach L.; Ernstorfer R.; Willig F.

In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control
pp. 211-215(5)
Authors: Bonanni A.; Stifter D.; Montaigne-Ramil A.; Schmidegg K.; Hingerl K.; Sitter H.

Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry
pp. 216-221(6)
Authors: Balmer R.S.; Martin T.

A new method for low-powered laser reflectance and scattering monitoring of MOVPE growth with narrow optical access
pp. 222-228(7)
Authors: Backstrom C.; Irvine S.J.C.; Barrioz V.

Advanced process control for high quality R&D and production of MOVPE material by RealTemp&unknown;
pp. 229-234(6)
Authors: Malm H.; Asplund C.; Becanovic S.; Borglind J.; Parekh A.; Hirschauer B.

Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors
pp. 235-239(5)
Authors: Bergunde T.; Henninger B.; Lunenburger M.; Heuken M.; Weyers M.; Zettler J.-T.

Growth of InGaAsP/InP-laser structures monitored by using RAS techniques
pp. 240-243(4)
Authors: Wolfram P.; Steimetz E.; Ebert W.; Henninger B.; Zettler J.-T.

Optical in situ monitoring of MOVPE GaSb(100) film growth
pp. 244-248(5)
Authors: Moller K.; Kollonitsch Z.; Giesen C.; Heuken M.; Willig F.; Hannappel T.

RDS characterization of GaAsSb and GaSb grown by MOVPE
pp. 249-253(5)
Authors: Pitts O.J.; Watkins S.P.; Wang C.X.

Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties
pp. 254-258(5)
Authors: Pristovsek M.; Tsukamoto S.; Han B.; Zettler J.-T.; Richter W.

Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(100) surfaces
pp. 259-264(6)
Authors: Wang C.X.; Pitts O.J.; Watkins S.P.

Growth of Sb-based materials by MOVPE
pp. 265-273(9)
Authors: Dimroth F.; Agert C.; Bett A.W.

Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy
pp. 274-278(5)
Authors: Watkins S.P.; Wiersma R.D.; Wang C.X.; Pitts O.J.; Bolognesi C.R.

Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSb
pp. 279-283(5)
Authors: Vankova V.; Leitch A.W.R.; Botha J.R.

Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP
pp. 284-288(5)
Authors: Yi S.S.; Chamberlin D.R.; Girolami G.; Juanitas M.; Bour D.; Moll N.; Moon R.

The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition
pp. 289-295(7)
Authors: Cederberg J.G.; Hafich M.J.; Biefeld R.M.; Palmisiano M.

Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
pp. 296-300(5)
Authors: Kizhayev S.S.; Zotova N.V.; Molchanov S.S.; Pushnyi B.V.; Yakovlev Y.P.

II-VI quantum dots grown by MOVPE
pp. 301-309(9)
Authors: Suemune I.; Yoshida K.; Kumano H.; Tawara T.; Ueta A.; Tanaka S.

Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
pp. 310-316(7)
Authors: Borgstrom M.; Bryllert T.; Sass T.; Wernersson L.-E.; Samuelson L.; Seifert W.

Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (100) substrates
pp. 317-321(5)
Authors: Poser F.; Bhattacharya A.; Weeke S.; Richter W.

Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy
pp. 322-327(6)
Authors: Eisele H.; Lenz A.; Hennig C.; Timm R.; Ternes M.

InAs -layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
pp. 328-332(5)
Authors: Hazdra P.; Voves J.; Oswald J.; Hulicius E.; Pangrac J.; Simecek T.

GaSb quantum dot growth using InAs quantum dot stressors
pp. 333-338(6)
Authors: Muller-Kirsch L.; Ledentsov N.N.; Sellin R.; Pohl U.W.; Bimberg D.; Hausler I.; Kirmse H.; Neumann W.

Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
pp. 339-342(4)
Authors: Hakkarainen T.; Toivonen J.; Sopanen M.; Lipsanen H.

InGaAsN/GaAs QD and QW structures grown by MOVPE
pp. 343-347(5)
Authors: Daniltsev V.M.; Drozdov M.N.; Drozdov Y.N.; Gaponova D.M.; Khrykin O.I.; Murel A.V.; Shashkin V.I.; Vostokov N.V.

1070nm and 1118nm high power lasers grown with partial strain balancing
pp. 348-353(6)
Authors: Roberts J.S.; Cullis A.G.; Sarma J.; Tihanyi P.L.

Highly strained very high-power laser diodes with InGaAs QWs
pp. 354-358(5)
Authors: Bugge F.; Zorn M.; Zeimer U.; Sharma T.; Kissel H.; Hulsewede R.; Erbert G.; Weyers M.

Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
pp. 359-363(5)
Authors: Kim J.; Cho S.; Sanz-Hervas A.; Majerfeld A.; Patriarche G.; Kim B.W.

Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions
pp. 364-368(5)
Authors: Knauer A.; Krispin P.; Balakrishnan V.R.; Weyers M.

Anisotropy in transport properties of ordered strained InGaP
pp. 369-374(6)
Authors: Hasenohrl S.; Novak J.; Kudela R.; Betko J.; Morvic M.; Fedor J.

Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
pp. 375-379(5)
Authors: Sass T.; Pietzonka I.; Borgstrom M.; Gustafson B.; Wernersson L.-E.; Seifert W.

Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
pp. 380-383(4)
Authors: Neumann S.; Bakin A.; Velling P.; Prost W.; Wehmann H.-H.; Schlachetzki A.; Tegude F.-J.

Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxy
pp. 384-389(6)
Authors: Tsuchiya T.; Shimizu J.; Shirai M.; Aoki M.

Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
pp. 390-394(5)
Authors: Decobert J.; Herrati D.; Colson V.; Leclerc D.; Goldstein L.

High growth enhancement factor in arrayed waveguide by MOVPE selective area growth
pp. 395-399(5)
Authors: Moriguchi Y.; Kihara T.; Shimomura K.

Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride
pp. 400-404(5)
Authors: Naniwae K.; Kurihara K.; Nishi K.; Sugou S.

Analysis of a time-dependent supply mechanism in selective area growth by MOCVD
pp. 405-410(6)
Authors: Greenspan J.E.; Blaauw C.; Emmerstorfer B.; Glew R.W.; Shih I.

A multiscale study of the selective MOVPE of Al_xGa_1-xAs in the presence of HCl
pp. 411-416(6)
Authors: Cavallotti C.; Nemirovskaya M.; Jensen K.F.

Investigation of the GaAs-pyramids overgrowth using MOCVD
pp. 417-420(4)
Authors: Gregusova D.; Cambel V.; Kudela R.; Soltys J.; Kostie I.; Attolini G.; Pelosi C.

Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor
pp. 421-425(5)
Authors: Franke D.; Sabelfeld N.; Ebert W.; Harde P.; Wolfram P.; Grote N.

Fabrication of AlGaInAs and GaInAsP buried heterostructure lasers by in situ etching
pp. 426-430(5)
Authors: Gessner R.; Dobbinson A.; Miler A.; Rieger J.; Veuhoff E.

Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
pp. 431-436(6)
Authors: Baskar K.; Sundgren P.; Douheret O.; Landgren G.

Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition
pp. 437-440(4)
Authors: Na H.; Kim H.J.; Yoon E.; Sone C.; Park Y.

N-enrichment at the GaAs_1-xN_x/GaAs(001) interface: microstructure and optical properties
pp. 441-445(5)
Authors: Dumont H.; Auvray L.; Dazord J.; Monteil Y.; Bondoux C.; Patriarche G.

Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3m laser emission
pp. 446-450(5)
Authors: Gouardes E.; Alexandre F.; Gauthier-Lafaye O.; Vuong-Becaert A.; Colson V.; Thedrez B.

Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films
pp. 451-456(6)
Authors: Volz K.; Koch J.; Kunert B.; Stolz W.

Nitrogen incorporation in (GaIn)(NAs) for 1.3m VCSEL grown with MOVPE
pp. 457-462(6)
Authors: Ramakrishnan A.; Steinle G.; Supper D.; Stolz W.; Ebbinghaus G.

Growth and characterization of high quality B_xGa_1-xAs/GaAs(001) epilayers
pp. 463-467(5)
Authors: Dumont H.; Dazord J.; Monteil Y.; Alexandre F.; Goldstein L.

MOVPE growth of B_xGa_1-xAs, B_xGa_1-x-yIn_yAs, and B_xAl_1-xAs alloys on (001) GaAs
pp. 468-473(6)
Authors: Gottschalch V.; Leibiger G.; Benndorf G.

Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
pp. 474-478(5)
Authors: Lampalzer M.; Volz K.; Treutmann W.; Nau S.; Torunski T.; Megges K.; Lorberth J.; Stolz W.

Metalorganic chemical vapor deposition of group III nitrides-a discussion of critical issues
pp. 479-486(8)
Authors: Keller S.; DenBaars S.P.

Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method
pp. 487-493(7)
Authors: Paszkiewicz R.; Paszkiewicz B.; Kozlowski J.; Piasecki M.; Kosnikowski W.; Tlaczala M.

Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiN_x by metalorganic vapor phase epitaxy
pp. 494-497(4)
Authors: Moon Y.-T.; Kim D.-J.; Park J.-S.; Oh J.-T.; Kim Y.-S.; Park N.-M.; Kim B.-H.; Park S.-J.

Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
pp. 498-502(5)
Authors: Jacobs K.; Daele B.V.; Leys M.R.; Moerman I.; Tendeloo G.V.

Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy
pp. 503-506(4)
Authors: Yamaguchi S.; Iwamura Y.; Watanabe Y.; Kosaki M.; Yukawa Y.; Nitta S.; Kamiyama S.; Amano H.; Akasaki I.

Investigations about series resistance of MOVPE grown GaN laser structures
pp. 507-512(6)
Authors: Scholz F.; Moutchnik G.; Dumitru V.; Harle R.; Schweizer H.

Growth and characteristics of Fe-doped GaN
pp. 513-517(5)
Authors: Heikman S.; Keller S.; Mates T.; DenBaars S.P.; Mishra U.K.

GaN/InGaN quantum wells grown in a close coupled showerhead reactor
pp. 518-522(5)
Authors: Thrush E.J.; Kappers M.J.; Dawson P.; Vickers M.E.; Barnard J.; Graham D.; Makaronidis G.; Rayment F.D.G.; Considine L.; Humphreys C.J.

Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN
pp. 523-527(5)
Authors: Schmidtling T.; Drago M.; Pohl U.W.; Richter W.

Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers
pp. 528-532(5)
Authors: Rossow U.; Hitzel F.; Riedel N.; Lahmann S.; Blasing J.; Krost A.; Ade G.; Hinze P.; Hangleiter A.

LPMOCVD growth of GaN on silicon carbide
pp. 533-536(4)
Authors: di Forte-Poisson M.-A.; Romann A.; Tordjman M.; Magis M.; Di Persio J.; Jacques C.; Vicente P.

Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE
pp. 537-541(5)
Authors: Akasaka T.; Ando S.; Nishida T.; Saitoh T.; Kobayashi N.

Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques
pp. 542-547(6)
Authors: Krtschil A.; Dadgar A.; Krost A.

AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
pp. 548-551(4)
Authors: Zhu T.G.; Chowdhury U.; Denyszyn J.C.; Wong M.M.; Dupuis R.D.

High-performance solar-blind photodetector using an Al_0.6Ga_0.4N n-type window layer
pp. 552-555(4)
Authors: Chowdhury U.; Wong M.M.; Collins C.J.; Yang B.; Denyszyn J.C.; Campbell J.C.; Dupuis R.D.

MOVPE growth of GaN on Si(111) substrates
pp. 556-562(7)
Authors: Dadgar A.; Poschenrieder M.; Blasing J.; Contreras O.; Bertram F.; Riemann T.; Reiher A.; Kunze M.; Daumiller I.; Krtschil A.; Diez A.; Kaluza A.; Modlich A.; Kamp M.; Christen J.; Ponce F.A.; Kohn E.; Krost A.

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
pp. 563-567(5)
Authors: Reiher A.; Blasing J.; Dadgar A.; Diez A.; Krost A.

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates
pp. 568-572(5)
Authors: Haffouz S.; Grzegorczyk A.; Hageman P.R.; Vennegues P.; van der Drift E.W.J.M.; Larsen P.K.

Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask
pp. 573-577(5)
Authors: Naoi H.; Narukawa M.; Miyake H.; Hiramatsu K.

Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
pp. 578-582(5)
Authors: Dikme Y.; Gerstenbrandt G.; Alam A.; Kalisch H.; Szymakowski A.; Fieger M.; Jansen R.H.; Heuken M.

Author Index
pp. 583-592(10)

Subject Index
pp. 593-595(3)