Publisher: Elsevier

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Volume 247, Number 3, January 2003

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Editorial Board
pp. ii-ii(1)

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Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
pp. 237-244(8)
Authors: Derluyn, J.; Dessein, K.; Flamand, G.; Mols, Y.; Poortmans, J.; Borghs, G.; Moerman, I.

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Fabrication of novel double-hetero-epitaxial SOI structure Si/-Al2O3/Si
pp. 255-260(6)
Authors: Tan, L.; Wang, Q.; Wang, J.; Yu, Y.; Liu, Z.; Lin, L.

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Growth and characterization of GaN and AlN films on (111) and (001) Si substrates
pp. 261-268(8)
Authors: Gong J.-R.; Yeh, M.; Wang, C.

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Structural and optical characterization of rapid thermally annealed InAs/In0.15Ga0.85As dots-in-well structure
pp. 269-274(6)
Authors: Raghavan, S.; Rotella, P.; Stintz, A.; Malloy, K.J.; Krishna, S.; Gray, A.L.

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Bulk GaN single crystals: growth conditions by flux method
pp. 275-278(4)
Authors: Song, Y.; Wang, W.; Yuan, W.; Wu, X.; Chen, X.

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Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy
pp. 279-283(5)
Authors: Yew, K.C.; Yoon, S.F.; Sun, Z.Z.; Wang, S.Z.

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Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
pp. 284-290(7)
Authors: Bubendorff, J.L.; Grandjean, N.; Damilano, B.; Troyon, M.

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Numerical analysis of the dissolution process of GaSb into InSb melt under different gravity conditions
pp. 291-300(10)
Authors: Kimura, T.; Arafune, K.; Balakrishnan, K.; Ozawa, T.; Okano, Y.; Murakami, N.; Adachi, H.; Hayakawa, Y.; Kumagawa, M.

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Numerical analysis for the growth of GaN layer in MOCVD reactor
pp. 301-312(12)
Authors: Shin, C.; Baek B.-J.; Lee, C.; Pak, B.; Yoon, J.; Park, K.

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A numerical investigation of the effects of gas-phase particle formation on silicon film deposition from silane
pp. 333-356(24)
Authors: Kremer, D.M.; Davis, R.W.; Moore, E.F.; Ehrman, S.H.

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Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
pp. 357-362(6)
Authors: Li, S.Y.; Lee, C.Y.; Tseng, T.Y.

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The effect of calcination temperature on the crystallinity of TiO2 nanopowders
pp. 363-370(8)
Authors: Chen Y.-F.; Lee, C.; Yeng, M.; Chiu, H.

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HRTEM and GIXRD studies of CdS nanocrystals embedded in Al2O3 films produced by magnetron RF-sputtering
pp. 371-380(10)
Authors: Conde, O.; Rolo, A.G.; Gomes, M.J.M.; Ricolleau, C.; Barber, D.J.

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Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films
pp. 381-386(6)
Authors: Jia, C.L.; Rodrguez Contreras, J.; Schubert, J.; Lentzen, M.; Poppe, U.; Kohlstedt, H.; Urban, K.; Waser, R.

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Properties of Dy3+-doped PbWO4 single crystal grown by modified Bridgman method
pp. 387-392(6)
Authors: Huang, Y.; Zhu, W.; Feng, X.; Duan, Y.; Man, Z.

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Effects of substrate temperature on the growth of C60 polycrystalline films by physical vapor deposition
pp. 401-407(7)
Authors: Cheng, W.; Tang, S.; Su, Y.; Lin, Y.; Chiu K.-C.

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Epitaxial LiNb0.5Ta0.5O3 films on LiTaO3 and LiNbO3 substrates grown by thermal plasma
pp. 408-418(11)
Authors: Kulinich, S.A.; Yamaki, T.; Bysakh, S.; Yamamoto, H.; Mitsuishi, K.; Song, M.; Terashima, K.; Furuya, K.

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Synthesis and characterization of nanocrystalline niobates
pp. 419-424(6)
Authors: Liu, J.; Li, X.; Li Y.-D.

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Effects of CaO addition on growth of YVO4 single crystals
pp. 428-431(4)
Authors: Zhang, S.; Wu, X.; Yan, X.; Ni, D.; Song, Y.

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Physicochemical behavior of nonlinear optical crystal CdHg(SCN)4
pp. 432-437(6)
Authors: Wang, X.Q.; Xu, D.; Lu, M.K.; Yuan, D.R.; Huang, J.; Li, S.G.; Lu, G.W.; Sun, H.Q.; Guo, S.Y.; Zhang, G.H.; Duan, X.L.; Liu, H.Y.; Liu, W.L.

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A nanoindentation study of thick cBN films prepared by chemical vapor deposition
pp. 438-444(7)
Authors: Chan, C.Y.; Zhang, W.J.; Matsumoto, S.; Bello, I.; Lee, S.T.

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Characterizations and luminescence properties of annealed porous silicon films
pp. 445-451(7)
Authors: Songyan, C.; Kashkarov, P.K.; Timoshenko, V.Y.; Baolin, L.; Bingxi, J.

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Growth and X-ray diffraction of Nd3+-doped Ba3Y(BO3)3 crystal
pp. 452-456(5)
Authors: Pan, S.; Hu, Z.; Lin, Z.; Wang, G.

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Crystal growth and characterization of the magnetic properties of CuSb2O6
pp. 457-466(10)
Authors: Prokofiev, A.V.; Ritter, F.; Assmus, W.; Gibson, B.J.; Kremer, R.K.

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Growth and spectroscopic characterization of Nd3BWO9 single crystal
pp. 467-471(5)
Authors: Majchrowski, A.; Michalski, E.; Brenier, A.

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The competition between {1014} cleavage and {0112} steep rhombohedra in gel grown calcite crystals
pp. 472-482(11)
Authors: Pastero, L.; Costa, E.; Alessandria, B.; Rubbo, M.; Aquilano, D.

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Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon
pp. 497-504(8)
Authors: Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J.R.

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Solvothermal preparation of graphite-like C3N4 nanocrystals
pp. 505-508(4)
Authors: Bai Y.-J.; Lu, B.; Liu, Z.; Li, L.; Cui, D.; Xu, X.; Wang, Q.

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Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)
pp. 509-515(7)
Authors: Kaatz, F.H.; Dai, J.; Markworth, P.R.; Buchholz, D.B.; Chang, R.P.H.

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Hollow rhombohedral calcite crystals encompassing CO2 microcavities nucleated in solution
pp. 516-522(7)
Authors: Aquilano, D.; Costa, E.; Genovese, A.; Roberto Massaro, F.; Pastero, L.; Rubbo, M.

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Habit modification of epsomite in the presence of urea
pp. 523-529(7)
Authors: Ramalingom, S.; Podder, J.; Narayana Kalkura, S.; Bocelli, G.

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Polymorphic-polytypic transition induced in crystals by interaction of spirals and 2D growth mechanisms
pp. 541-550(10)
Authors: Aquilano, D.; Veesler, S.; Astier, J.P.; Pastero, L.

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Crystal growth and spectral properties of Nd3+:KY(WO4)2 crystal
pp. 551-554(4)
Authors: Han, X.; Wang, G.

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Microwave assisted crystallization of zeolite A from dense gels
pp. 555-562(8)
Authors: Bonaccorsi, L.; Proverbio, E.

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A phase field model with electric current
pp. 587-596(10)
Author: Brush, L.N.

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Origin of positive charging of nanometer-sized clusters generated during thermal evaporation of copper
pp. 623-630(8)
Authors: Jeon, I.; Barnes, M.C.; Kim, D.; Hwang, N.M.

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Author Index
pp. 642-648(7)

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Subject Index
pp. 649-651(3)

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