Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
pp. 237-244(8)
Authors: Derluyn J.; Dessein K.; Flamand G.; Mols Y.; Poortmans J.; Borghs G.; Moerman I.

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces
pp. 245-250(6)
Authors: Murakami H.; Kumagai Y.; Seki H.; Koukitu A.

Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)
pp. 251-254(4)
Authors: Kim H.J.; Chang J.Y.; Xie Y.H.

Fabrication of novel double-hetero-epitaxial SOI structure Si/-Al₂O₃/Si
pp. 255-260(6)
Authors: Tan L.; Wang Q.; Wang J.; Yu Y.; Liu Z.; Lin L.

Growth and characterization of GaN and AlN films on (111) and (001) Si substrates
pp. 261-268(8)
Authors: Gong J.-R.; Yeh M.-F.; Wang C.-L.

Structural and optical characterization of rapid thermally annealed InAs/In_0.15Ga_0.85As dots-in-well structure
pp. 269-274(6)
Authors: Raghavan S.; Rotella P.; Stintz A.; Malloy K.J.; Krishna S.; Gray A.L.

Bulk GaN single crystals: growth conditions by flux method
pp. 275-278(4)
Authors: Song Y.; Wang W.; Yuan W.; Wu X.; Chen X.

Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy
pp. 279-283(5)
Authors: Yew K.C.; Yoon S.F.; Sun Z.Z.; Wang S.Z.

Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
pp. 284-290(7)
Authors: Bubendorff J.L.; Grandjean N.; Damilano B.; Troyon M.

Numerical analysis of the dissolution process of GaSb into InSb melt under different gravity conditions
pp. 291-300(10)
Authors: Kimura T.; Arafune K.; Balakrishnan K.; Ozawa T.; Okano Y.; Murakami N.; Adachi H.; Hayakawa Y.; Kumagawa M.

Numerical analysis for the growth of GaN layer in MOCVD reactor
pp. 301-312(12)
Authors: Shin C.-Y.; Baek B.-J.; Lee C.-R.; Pak B.; Yoon J.-M.; Park K.-S.

The effect of the initial dopant distribution in the melt on the axial compositional uniformity of a thin doped crystal grown in strictly zero-gravity environment by Bridgman-Stockbarger method
pp. 313-319(7)
Authors: Tulcan-Paulescu E.; Balint A.M.; Balint S.

Optimization of surface temperature distribution for control of point defects in the silicon single crystal
pp. 320-332(13)
Authors: Sung Woo H.; Hoon Jeong J.; Kang I.S.

A numerical investigation of the effects of gas-phase particle formation on silicon film deposition from silane
pp. 333-356(24)
Authors: Kremer D.M.; Davis R.W.; Moore E.F.; Ehrman S.H.

Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process
pp. 357-362(6)
Authors: Li S.Y.; Lee C.Y.; Tseng T.Y.

The effect of calcination temperature on the crystallinity of TiO₂ nanopowders
pp. 363-370(8)
Authors: Chen Y.-F.; Lee C.-Y.; Yeng M.-Y.; Chiu H.-T.

HRTEM and GIXRD studies of CdS nanocrystals embedded in Al₂O₃ films produced by magnetron RF-sputtering
pp. 371-380(10)
Authors: Conde O.; Rolo A.G.; Gomes M.J.M.; Ricolleau C.; Barber D.J.

Introduction and characterization of interfacial defects in SrRuO₃/BaTiO₃/SrRuO₃ multilayer films
pp. 381-386(6)
Authors: Jia C.L.; Rodrguez Contreras J.; Schubert J.; Lentzen M.; Poppe U.; Kohlstedt H.; Urban K.; Waser R.

Properties of Dy³⁺-doped PbWO₄ single crystal grown by modified Bridgman method
pp. 387-392(6)
Authors: Huang Y.; Zhu W.; Feng X.; Duan Y.; Man Z.

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl₂O₄) ceramic target
pp. 393-400(8)
Authors: Fang G.J.; Li D.; Yao B.-L.

Effects of substrate temperature on the growth of C₆₀ polycrystalline films by physical vapor deposition
pp. 401-407(7)
Authors: Cheng W.-R.; Tang S.-J.; Su Y.-C.; Lin Y.-J.; Chiu K.-C.

Epitaxial LiNb_0.5Ta_0.5O₃ films on LiTaO₃ and LiNbO₃ substrates grown by thermal plasma
pp. 408-418(11)
Authors: Kulinich S.A.; Yamaki T.; Bysakh S.; Yamamoto H.; Mitsuishi K.; Song M.; Terashima K.; Furuya K.

Synthesis and characterization of nanocrystalline niobates
pp. 419-424(6)
Authors: Liu J.-F.; Li X.-L.; Li Y.-D.

Bias-induced changes in carrier type of Pb_(1-x)Fe_(x)S nanocrystalline solution grown thin films
pp. 425-427(3)
Authors: Joshi R.K.; Sehgal H.K.

Effects of CaO addition on growth of YVO₄ single crystals
pp. 428-431(4)
Authors: Zhang S.; Wu X.; Yan X.; Ni D.; Song Y.

Physicochemical behavior of nonlinear optical crystal CdHg(SCN)₄
pp. 432-437(6)
Authors: Wang X.Q.; Xu D.; Lu M.K.; Yuan D.R.; Huang J.; Li S.G.; Lu G.W.; Sun H.Q.; Guo S.Y.; Zhang G.H.; Duan X.L.; Liu H.Y.; Liu W.L.

A nanoindentation study of thick cBN films prepared by chemical vapor deposition
pp. 438-444(7)
Authors: Chan C.Y.; Zhang W.J.; Matsumoto S.; Bello I.; Lee S.T.

Characterizations and luminescence properties of annealed porous silicon films
pp. 445-451(7)
Authors: Songyan C.; Kashkarov P.K.; Timoshenko V.Y.; Baolin L.; Bingxi J.

Growth and X-ray diffraction of Nd³⁺-doped Ba₃Y(BO₃)₃ crystal
pp. 452-456(5)
Authors: Pan S.; Hu Z.; Lin Z.; Wang G.

Crystal growth and characterization of the magnetic properties of CuSb₂O₆
pp. 457-466(10)
Authors: Prokofiev A.V.; Ritter F.; Assmus W.; Gibson B.J.; Kremer R.K.

Growth and spectroscopic characterization of Nd₃BWO₉ single crystal
pp. 467-471(5)
Authors: Majchrowski A.; Michalski E.; Brenier A.

The competition between {1014} cleavage and {0112} steep rhombohedra in gel grown calcite crystals
pp. 472-482(11)
Authors: Pastero L.; Costa E.; Alessandria B.; Rubbo M.; Aquilano D.

Factorially designed crystallization trials of the full-length P0 myelin membrane glycoprotein. I. Precipitation diagram
pp. 483-496(14)
Authors: Sedzik J.; Kotake Y.; Uyemura K.; Ataka M.

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon
pp. 497-504(8)
Authors: Ayouchi R.; Martin F.; Leinen D.; Ramos-Barrado J.R.

Solvothermal preparation of graphite-like C₃N₄ nanocrystals
pp. 505-508(4)
Authors: Bai Y.-J.; Lu B.; Liu Z.-G.; Li L.; Cui D.-L.; Xu X.-G.; Wang Q.-L.

Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)
pp. 509-515(7)
Authors: Kaatz F.H.; Dai J.-Y.; Markworth P.R.; Buchholz D.B.; Chang R.P.H.

Hollow rhombohedral calcite crystals encompassing CO₂ microcavities nucleated in solution
pp. 516-522(7)
Authors: Aquilano D.; Costa E.; Genovese A.; Roberto Massaro F.; Pastero L.; Rubbo M.

Habit modification of epsomite in the presence of urea
pp. 523-529(7)
Authors: Ramalingom S.; Podder J.; Narayana Kalkura S.; Bocelli G.

Growth rates of the principal facets of ice between -10^oC and -40^oC
pp. 530-540(11)
Author: Libbrecht K.G.

Polymorphic-polytypic transition induced in crystals by interaction of spirals and 2D growth mechanisms
pp. 541-550(10)
Authors: Aquilano D.; Veesler S.; Astier J.P.; Pastero L.

Crystal growth and spectral properties of Nd³⁺:KY(WO₄)₂ crystal
pp. 551-554(4)
Authors: Han X.; Wang G.

Microwave assisted crystallization of zeolite A from dense gels
pp. 555-562(8)
Authors: Bonaccorsi L.; Proverbio E.

Distinct property effects on rapid solidification of a thin liquid layer on a substrate subject to self-consistent melting
pp. 563-575(13)
Authors: Yeh F.B.; Wei P.S.; Chiu S.H.

Rapid crystallization and growth mechanisms of highly undercooled Ag-Cu-Ge ternary alloy
pp. 576-586(11)
Authors: Wang N.; Wei B.

A phase field model with electric current
pp. 587-596(10)
Author: Brush L.N.

Three-dimensional simulation of floating-zone crystal growth of oxide crystals
pp. 597-612(16)
Author: Lan C.W.

Solid-liquid interface energies in the succinonitrile and succinonitrile-carbon tetrabromide eutectic system
pp. 613-622(10)
Authors: Marasli N.; Kesloglu K.; Arslan B.

Origin of positive charging of nanometer-sized clusters generated during thermal evaporation of copper
pp. 623-630(8)
Authors: Jeon I.-D.; Barnes M.C.; Kim D.-Y.; Hwang N.M.

Effects of kinetic inhibitors on the formation and growth of hydrate crystals at a liquid-liquid interface
pp. 631-641(11)
Authors: Sakaguchi H.; Ohmura R.; Mori Y.H.

Author Index
pp. 642-648(7)

Subject Index
pp. 649-651(3)