Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Crystal-melt interface shape and dislocations during the melting of silicon
pp. 1-12(12)
Authors: Wang Y.; Kakimoto K.

Silicon nanowires grown on a pre-annealed Si substrate
pp. 13-16(4)
Authors: Zeng X.B.; Xu Y.Y.; Zhang S.B.; Hu Z.H.; Diao H.W.; Wang Y.Q.; Kong G.L.; Liao X.B.

Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates
pp. 17-22(6)
Authors: Kontos A.G.; Raptis Y.S.; Straszburg M.; Pohl U.W.

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
pp. 23-27(5)
Authors: Putyato M.A.; Preobrazhenskii V.V.; Semyagin B.R.; Bolkhovityanov Y.B.; Gilinsky A.M.; Gutakousky A.K.; Revenko M.A.; Pchelyakov O.P.; Feklin D.F.

Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy
pp. 28-34(7)
Authors: Li H.D.; Wang T.; Jiang N.; Liu Y.H.; Bai J.; Sakai S.

Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN_1-xBi_x alloys and co-doping with arsenic
pp. 35-41(7)
Authors: Novikov S.V.; Winser A.J.; Li T.; Campion R.; Harrison I.; Foxon C.T.

High-quality GaMnAs films grown with arsenic dimers
pp. 42-48(7)
Authors: Campion R.P.; Edmonds K.W.; Zhao L.X.; Wang K.Y.; Foxon C.T.; Gallagher B.L.; Staddon C.R.

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
pp. 49-54(6)
Authors: He J.; Zhang Y.C.; Xu B.; Wang Z.G.

The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD
pp. 55-61(7)
Authors: Kim S.; Lee K.; Lee H.; Park K.; Kim C.-S.; Son S.-J.; Yi K.-W.

Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells
pp. 62-68(7)
Authors: Kim S.; Lee K.; Park K.; Kim C.-S.

A combined carbon and oxygen segregation model for the LEC growth of SI GaAs
pp. 69-76(8)
Authors: Eichler S.; Seidl A.; Kretzer U.; Weinert B.

Formation of microtwins in TmP/GaAs heterostructures
pp. 77-83(7)
Authors: Lin C.H.; Hwu R.J.; Sadwick L.P.

Growth temperature effect on the optical and material properties of Al_xIn_yGa_1-x-yN epilayers grown by MOCVD
pp. 84-90(7)
Authors: Huang J.S.; Dong X.; Luo X.D.; Li D.B.; Liu X.L.; Xu Z.Y.; Ge W.K.

The growth morphologies of GaN layer on Si(111) substrate
pp. 91-98(8)
Authors: Lu Y.; Liu X.; Lu D.-C.; Yuan H.; Hu G.; Wang X.; Wang Z.; Duan X.

Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy
pp. 99-104(6)
Authors: Luo X.D.; Xu Z.Y.; Wang Y.Q.; Wang W.X.; Wang J.N.; Ge W.K.

Synthesis of epitaxial Y-type magnetoplumbite thin films by quick optimization with combinatorial pulsed laser deposition
pp. 105-109(5)
Authors: Ohkubo I.; Matsumoto Y.; Ueno K.; Chikyow T.; Kawasaki M.; Koinuma H.

Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure
pp. 110-118(9)
Authors: Entani S.; Kiguchi M.; Saiki K.; Koma A.

Electrical and optical properties of ZnO transparent conducting films by the sol-gel method
pp. 119-125(7)
Authors: Lee J.-H.; Ko K.-H.; Park B.-O.

In_0.25Ga_0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
pp. 126-130(5)
Authors: Zhang Z.C.; Yang S.Y.; Zhang F.Q.; Xu B.; Zeng Y.P.; Chen Y.H.; Wang Z.G.

Electromechanical and electro-optic properties of xBiScO₃-yBiGaO₃-(1-x-y)PbTiO₃ single crystals
pp. 131-136(6)
Authors: Zhang S.; Jeong D.-Y.; Zhang Q.; Shrout T.R.

Dependence of photochromic damage on polarization in KTiOPO₄ crystals
pp. 137-140(4)
Authors: Hu X.B.; Wang J.Y.; Zhang H.J.; Jiang H.D.; Liu H.; Mu X.D.; Ding Y.J.

Transmission loss of lead fluoride crystals induced by oxygen contamination
pp. 141-147(7)
Authors: Ren G.; Qun D.; Li Z.; Shen D.

Synthesis, crystal growth and second harmonic generation properties of trivalent rare-earth-doped non-linear tungsten-bronze-type structure Ba₂Na_1-3xRE_xNb₅O₁₅ (RE=Sc, Y, La, Gd, Yb and Lu)
pp. 148-156(9)
Authors: Yoshikawa A.; Itagaki H.; Fukuda T.; Lebbou K.; El Hassouni A.; Brenier A.; Goutaudier C.; Tillement O.; Boulon G.

On the thermal and optical properties of ZnSe and doped ZnSe crystals grown by PVT
pp. 157-165(9)
Authors: Sankar N.; Ramachandran K.

A new membrane-based crystallization technique: tests on lysozyme
pp. 166-176(11)
Authors: Curcio E.; Profio G.D.; Drioli E.

Protein crystal quality in diffusive environments and its evaluation
pp. 177-184(8)
Authors: Lopez-Jaramillo F.J.; Otalora F.; Gavira J.A.

Growth-induced inhomogeneities in synthetic quartz crystals revealed by the cathodoluminescence method
pp. 185-191(7)
Author: Kawasaki M.

Rapid sonocrystallization in the salting-out process
pp. 192-198(7)
Authors: Li H.; Wang J.; Bao Y.; Guo Z.; Zhang M.

Growth and characterization of pure and doped potassium pentaborate (KB5) single crystals
pp. 199-206(8)
Authors: Rajasekar S.A.; Thamizharasan K.; Joseph Arul Pragasam A.; Packiam Julius J.; Sagayaraj P.

Reinvestigation of phase relations around the oxyapatite phase in the Nd₂O₃-SiO₂ system
pp. 207-212(6)
Authors: Masubuchi Y.; Higuchi M.; Kodaira K.

Luminescence characteristics of pulsed laser deposited ZnGa₂O₄ thin film phosphors grown on various substrates
pp. 213-218(6)
Authors: Yi S.S.; Kim I.W.; Park H.L.; Bae J.S.; Moon B.K.; Jeong J.H.

Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals
pp. 219-235(17)
Authors: Klein O.; Philip P.