Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Contents
pp. viii-ix(1)

Mechanisms of crystallization of bulk GaN from the solution under high N₂ pressure
pp. 177-186(10)
Authors: Grzegory I.; Bockowski M.; Lucznik B.; Krukowski S.; Romanowski Z.; Wroblewski M.; Porowski S.

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
pp. 187-193(7)
Authors: Edgar J.H.; Liu L.; Liu B.; Zhuang D.; Chaudhuri J.; Kuball M.; Rajasingam S.

Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE
pp. 194-206(13)
Authors: Bockowski M.; Grzegory I.; Krukowski S.; Lucznik B.; Romanowski Z.; Wroblewski M.; Borysiuk J.; Weyher J.; Hageman P.; Porowski S.

Growth and separation related properties of HVPE-GaN free-standing films
pp. 207-214(8)
Authors: Paskova T.; Darakchieva V.; Paskov P.P.; Sodervall U.; Monemar B.

Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN
pp. 215-222(8)
Authors: Kumagai Y.; Murakami H.; Seki H.; Koukitu A.

Growth and characterization of low defect GaN by hydride vapor phase epitaxy
pp. 223-229(7)
Authors: Xu X.; Vaudo R.P.; Loria C.; Salant A.; Brandes G.R.; Chaudhuri J.

Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring
pp. 230-236(7)
Authors: Koukitu A.; Mayumi M.; Kumagai Y.

Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers
pp. 237-243(7)
Authors: Butcher K.S.A.; Afifuddin; Chen P.P.-T.; Godlewski M.; Szczerbakow A.; Goldys E.M.; Tansley T.L.; Freitas J.A.

Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN
pp. 244-251(8)
Authors: Myers T.H.; VanMil B.L.; Holbert L.J.; Peng C.Y.; Stinespring C.D.; Alam J.; Freitas J.A.; Dmitriev V.A.; Pechnikov A.; Shapovalova Y.; Ivantsov V.

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials
pp. 252-258(7)
Authors: Rodriguez B.J.; Gruverman A.; Kingon A.I.; Nemanich R.J.

Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods
pp. 259-270(12)
Authors: Liliental-Weber Z.; Jasinski J.; Washburn J.

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
pp. 271-280(10)
Authors: Raghothamachar B.; Vetter W.M.; Dudley M.; Dalmau R.; Schlesser R.; Sitar Z.; Michaels E.; Kolis J.W.

Vacancies as compensating centers in bulk GaN: doping effects
pp. 281-286(6)
Authors: Saarinen K.; Ranki V.; Suski T.; Bockowski M.; Grzegory I.

Some effects of oxygen impurities on AlN and GaN
pp. 287-298(12)
Authors: Slack G.A.; Schowalter L.J.; Morelli D.; Freitas J.A.

Optical characterization of bulk GaN grown by a Na-Ga melt technique
pp. 299-306(8)
Authors: Skromme B.J.; Palle K.; Poweleit C.D.; Yamane H.; Aoki M.; DiSalvo F.J.

Donors in hydride-vapor-phase epitaxial GaN
pp. 307-314(8)
Authors: Freitas J.A.; Moore W.J.; Shanabrook B.V.; Braga G.C.B.; Lee S.K.; Park S.S.; Han J.Y.; Koleske D.D.

Do we know the fundamental energy gap of InN?
pp. 315-319(5)
Authors: Bechstedt F.; Furthmuller J.

Band structure effects on the transient electron transport in wurtzite InN
pp. 320-324(5)
Authors: de Vasconcelos T.F.; Maia F.F.; Caetano E.W.S.; Freire V.N.; da Costa J.A.P.; da Silva E.F.

Excitons of the structure in wurtzite In_xGa_1-xN and their properties
pp. 325-340(16)
Author: Alexandrov D.

Strong exciton energy blue shift in graded wurtzite and zincblende GaN/Al_0.2Ga_0.8N single quantum wells
pp. 341-346(6)
Authors: Caetano E.W.S.; Freire V.N.; Farias G.A.

Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells
pp. 347-354(8)
Authors: Rodrigues S.C.P.; Sipahi G.M.

Author Index
pp. 355-359(5)

Subject Index
pp. 360-361(2)