Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Temperature control in InGaAs-based quantum well structures grown by molecular beam epitaxy on GaAs (100) and GaAs (111)B substrates
pp. 1-8(8)
Authors: Hernando J.; Tijero J.M.G.; Sanchez de Rojas J.L.

Atomic depth distribution and growth modes of Sn on Si(111)-4x1-In and -&Eth;3x&Eth;3-Au surfaces at room temperature
pp. 9-14(6)
Authors: Yamanaka T.; Ino S.

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
pp. 15-20(6)
Authors: Oyama Y.; Tezuka K.; Suto K.; Nishizawa J.-I.

Defect-selective etching of GaN in a modified molten bases system
pp. 21-24(4)
Authors: Kamler G.; Weyher J.L.; Grzegory I.; Jezierska E.; Wosinski T.

N-type doping behavior of A1_0.15Ga_0.85N:Si with various Si incorporations
pp. 25-30(6)
Author: Lee C.-R.

On mass transport and surface morphology of sublimation grown 4H silicon carbide
pp. 31-36(6)
Authors: Schulz D.; Doerschel J.; Lechner M.; Rost H.-J.; Siche D.; Wollweber J.

A global thermal analysis of multizone resistance furnaces with specular and diffuse samples
pp. 37-54(18)
Authors: Perez-Grande I.; Rivas D.; de Pablo V.

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy
pp. 55-63(9)
Authors: Haus E.; Smorchkova I.P.; Heying B.; Fini P.; Poblenz C.; Mates T.; Mishra U.K.; Speck J.S.

A new phenomenon in the floating-zone (FZ) growth of Si nanowires
pp. 64-68(5)
Authors: Hu Q.; Li G.; Suzuki H.; Araki H.; Ishikawa N.; Yang W.; Noda T.

Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
pp. 69-72(4)
Authors: Shen X.M.; Fu Y.; Feng G.; Zhang B.S.; Feng Z.H.; Wang Y.T.; Yang H.

Temperature dependence of stresses in GaN/AlN/6H-SiC(0001) structures: correlation between AlN buffer thickness and intrinsic stresses in GaN
pp. 73-77(5)
Authors: Keckes J.; Koblmueller G.; Averbeck R.

Crystal structure and ferroelectricity of nanocrystalline barium titanate thin films
pp. 78-84(7)
Authors: Wang M.-C.; Hsiao F.-Y.; Hsi C.-S.; Wu N.-C.

Preparation of high-quality anthracene crystals using double run selective self-seeding vertical Bridgman technique (DRSSVBT)
pp. 85-89(5)
Authors: Arulchakkaravarthi A.; Laksmanaperumal C.K.; Santhanaraghavan P.; Sivaji K.; Kumar R.; Muralithar S.; Ramasamy P.

Relationships between DTA and DIL characteristics of nano-sized alumina powders during - to -phase transformation
pp. 90-98(9)
Authors: Yen F.S.; Chang J.L.; Yu P.C.

Characteristics and crystal structure of the Ba(Zr_xTi_1-x)O₃ thin films deposited by RF magnetron sputtering
pp. 99-107(9)
Authors: Wang M.-C.; Chen C.-Y.; Hsi C.-S.; Wu N.-C.

Directional CdS nanowires fabricated by chemical bath deposition
pp. 108-112(5)
Authors: Zhang H.; Ma X.; Xu J.; Niu J.; Sha J.; Yang D.

Thermal stability and interfacial reaction of TiB_x films deposited on (100)Si by dual-electron-beam evaporation
pp. 113-120(8)
Author: Lee Y.-K.

Growth and characterization of Pb_1-x(Mg_1-ySr_y)_xS thin films prepared by hot-wall epitaxy
pp. 121-126(6)
Authors: Abe S.; Masumoto K.

Investigation of interfacial microstructures of MBE-grown NdF₃/Si (111) heterostructures
pp. 127-132(6)
Authors: Cho N.T.; Ko J.M.; Shim K.B.; Fukuda T.

CrN single-crystal growth using Cr-Ga-Na ternary melt
pp. 133-138(6)
Authors: Aoki M.; Yamane H.; Shimada M.; Kajiwara T.

Surface imaging of a natural mineral surface using scanning-probe microscopy
pp. 139-149(11)
Authors: Bokern D.G.; Ducker W.A.C.; Hunter K.A.; McGrath K.M.

A new phase of cadmium titanate by hydrothermal method
pp. 150-154(5)
Authors: Wang H.; Zhang X.; Huang A.; Xu H.; Zhu M.; Wang B.; Yan H.; Yoshimura M.

Growth, spectroscopic and thermal behavior of Cd(SCN)₂(DMSO)₂
pp. 155-160(6)
Authors: Wang X.Q.; Xu D.; Yuan D.R.; Lu M.K.; Cheng X.F.; Huang J.; Lu G.W.; Guo S.Y.; Zhang G.H.

Sonochemical preparation of lead sulfide nanocrystals in an oil-in-water microemulsion
pp. 161-168(8)
Authors: Wang H.; Zhang J.-R.; Zhu J.-J.

Solvothermal preparation of Cu₂O crystalline particles
pp. 169-175(7)
Authors: Chen S.-J.; Chen X.-T.; Xue Z.; Li L.-H.; You X.-Z.