Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes
pp. 181-192(12)
Authors: Oyama Y.; Kochiya T.; Suto K.; Nishizawa J.-i.

Optical characteristics of Mn⁺-ion-implanted GaN epilayers
pp. 193-197(5)
Authors: Shon Y.; Kwon Y.H.; Kang T.W.; Fan X.; Fu D.; Kim Y.

Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry
pp. 198-206(9)
Authors: Balmer R.S.; Pickering C.; Pidduck A.J.; Martin T.

Fabrication of silicon-on-insulator structure with Si₃N₄ as buried insulating films by epitaxial layer transfer
pp. 207-211(5)
Authors: Xie X.; Zhang N.; Men C.; Liu W.; Lin Q.; An Z.; Lin C.

Self-organized InGaAs quantum dots grown on GaAs (311)B substrate studied by conductive atomic force microscope technique
pp. 212-218(7)
Authors: Okada Y.; Miyagi M.; Akahane K.; Kawabe M.; Shigekawa H.

Microstructural evolution of precursor-derived gallium nitride thin films
pp. 219-227(9)
Authors: Puchinger M.; Kisailus D.J.; Lange F.F.; Wagner T.

InGaAs zone growth single crystal with convex solid-liquid interface toward the melt
pp. 228-236(9)
Authors: Nishijima Y.; Otsubo K.; Tezuka H.; Nakajima K.; Ishikawa H.

Vertical gradient freeze growth of GaAs with a rotating magnetic field
pp. 237-246(10)
Authors: Patzold O.; Grants I.; Wunderwald U.; Jenkner K.; Croll A.; Gerbeth G.

Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD
pp. 247-253(7)
Authors: Kim S.; Seo J.; Lee K.; Lee H.; Park K.; Kim Y.; Kim C.-S.

Growth behavior and crystal structures of different phases in Mn_xCd_1-xIn₂Te₄ grown by Bridgman method
pp. 254-260(7)
Authors: Chang Y.; Guo X.; Jie W.; An W.

Temperature dependence of band gap and photocurrent properties for the AgInS₂ epilayers grown by hot wall epitaxy
pp. 261-266(6)
Authors: You S.H.; Hong K.J.; Lee B.J.; Jeong T.S.; Youn C.J.; Park J.S.; Baek S.N.

Influence of powder supply on radio-frequency power stability and compositional uniformity in near-stoichiometric LiTaO₃ crystal grown by double-crucible Czochralski method
pp. 267-272(6)
Authors: Nakamura M.; Takekawa S.; Furukawa Y.; Kitamura K.

Studies on the solubility of GaPO₄ in phosphoric acid
pp. 273-277(5)
Authors: Barz R.-U.; Grassl M.; Gille P.

Description of the adhesive crystal growth under normal and micro-gravity conditions employing experimental and numerical approaches
pp. 278-288(11)
Authors: Maruyama S.; Ohno K.; Komiya A.; Sakai S.

TSSG of RbTiOPO₄ single crystals from phosphate flux and their characterization
pp. 289-296(8)
Authors: Kannan C.V.; Ganesa Moorthy S.; Kannan V.; Subramanian C.; Ramasamy P.

Comparison between pure and deuterated potassium acid phthalate (DKAP) single crystals
pp. 297-303(7)
Authors: Mohan Kumar R.; Rajan Babu D.; Murugakoothan P.; Jayavel R.

Low-temperature synthesis and characterization of -La₂S₃ nanorods
pp. 304-308(5)
Authors: Tang K.B.; An C.; Xie P.; Shen G.; Qian Y.

Nucleation and growth kinetics in synthesizing nanometer calcite
pp. 309-320(12)
Authors: Lin R.-Y.; Zhang J.-Y.; Zhang P.-X.

X-ray diffraction properties of protein crystals prepared in agarose gel under hydrostatic pressure
pp. 321-333(13)
Authors: Charron C.; Robert M.-C.; Capelle B.; Kadri A.; Jenner G.; Giege R.; Lorber B.

Parallel computation of radiative heat transfer in an axisymmetric closed chamber: an application to crystal growth
pp. 334-345(12)
Authors: Garber W.; Tangerman F.

Author Index
pp. 346-349(4)

Subject Index
pp. 350-351(2)