Publisher: Elsevier

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Volume 244, Number 3, October 2002

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Contents continued
pp. IV-IV(1)

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Editorial Board
pp. ii-ii(1)

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Characteristics of BaNbxTi1-xO3 thin films grown by laser molecular beam epitaxy
pp. 225-228(4)
Authors: Yan, L.; Lu, H.; Chen, Z.; Dai, S.; Zhou, Y.; Yang, G.

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Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
pp. 229-235(7)
Authors: Luo, M.C.; Wang, X.L.; Li, J.M.; Liu, H.X.; Wang, L.; Sun, D.Z.; Zeng, Y.P.; Lin, L.Y.

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Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3
pp. 236-242(7)
Authors: Nishizawa, J.; Kurabayashi, T.; Plotka, P.; Kikuchi, H.; Hamano, T.

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High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells
pp. 243-248(6)
Authors: Carta, G.; D'Andrea, A.; Fernandez-Alonso, F.; El Habra, N.; Righini, M.; Rossetto, G.; Schiumarini, D.; Selci, S.; Zanella, P.

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Crystal growth of zinc selenide under g-conditions
pp. 249-256(8)
Authors: Siche, D.; Bottcher, K.; Rinas, U.; Hartmann, H.

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Dislocation conversion in 4H silicon carbide epitaxy
pp. 257-266(10)
Authors: Ha, S.; Mieszkowski, P.; Skowronski, M.; Rowland, L.B.

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Crystal growth and some properties of REMn2Si2 (RE=Er, Tm, Yb, Lu) compounds
pp. 267-273(7)
Authors: Okada, S.; Kudou, K.; Mori, T.; Iizumi, K.; Shishido, T.; Tanaka, T.; Rogl, P.

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Evidence of hetero-epitaxy of Sm-orthoferrite on MgO(001) substrates by the pulsed laser deposition technique
pp. 274-280(7)
Authors: Dumont, Y.; Vedpathak, M.; Keller, N.; Tessier, M.; Tromson-Carli, A.; Guyot, M.

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Growth morphology of {100} faces of zinc cadmium thiocyanate crystal investigated by atomic force microscopy
pp. 281-286(6)
Authors: Jiang, X.N.; Xu, D.; Yuan, D.R.; Sun, D.L.; Lu, M.K.; Wang, X.Q.; Zhang, G.H.

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Ga2O3 nanomaterials synthesized from ball-milled GaN powders
pp. 287-295(9)
Authors: Lee, J.; Park, K.; Nahm, S.; Kim, S.; Kim, S.

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Floating zone growth and characterization of semiconducting Ru2Si3 single crystals
pp. 296-304(9)
Authors: Souptel, D.; Behr, G.; Ivanenko, L.; Vinzelberg, H.; Schumann, J.

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Enhanced magnetoresistance in nanocrystalline La0.6Pb0.4MnO3 thin films
pp. 313-317(5)
Authors: Singh, A.; Aswal, D.K.; Viswanadham, C.S.; Goswami, G.L.; Gupta, L.C.; Gupta, S.K.; Yakhmi, J.V.

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Growth of belt-like SnS crystals from ethylenediamine solution
pp. 333-338(6)
Authors: An, C.; Tang, K.; Shen, G.; Wang, C.; Yang, Q.; Hai, B.; Qian, Y.

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Solubility of emerald in H2SO4 aqueous solution under hydrothermal conditions
pp. 339-341(3)
Authors: Chen, Z.; Zhang, G.; Shen, H.; Huang, C.

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In situ measurement of pH and supersaturation-dependent growth kinetics of the prismatic and pyramidal facets of KDP crystals
pp. 342-348(7)
Authors: Sharma, S.K.; Verma, S.; Shrivastava, B.B.; Wadhawan, V.K.

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The study of ANSH crystallization from solution with concentration measurement by magnetic weigh method
pp. 359-363(5)
Authors: Xinxin, Z.; Su, G.; He, Y.; Li, Z.; Li, G.; Ma, J.

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Growth of single-crystal PbS nanorods via a biphasic solvothermal interface reaction route
pp. 364-368(5)
Authors: Mo, M.; Shao, M.; Hu, H.; Yang, L.; Yu, W.; Qian Y.-t.

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Controlling the kinetic versus thermodynamic crystallisation of calcium carbonate
pp. 369-378(10)
Authors: Dickinson, S.R.; Henderson, G.E.; McGrath, K.M.

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Coupled growth of unidirectionally solidified Al2O3-YAG eutectic ceramics
pp. 384-392(9)
Authors: Mizutani, Y.; Yasuda, H.; Ohnaka, I.; Maeda, N.; Waku, Y.

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Author Index
pp. 393-397(5)

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Subject Index
pp. 398-399(2)

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