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Publisher: Elsevier

Volume 243, Number 3, September 2002

Editorial Board
pp. ii-ii(1)

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Germanium effect on void defects in Czochralski silicon
pp. 371-374(4)
Authors: Yang, D.; Yu, X.; Ma, X.; Xu, J.; Li, L.; Que, D.

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Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy
pp. 375-380(6)
Authors: Zamir, S.; Meyler, B.; Salzman, J.

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Initial stage of liquid phase heteroepitaxy of III-V ternary alloys
pp. 381-388(8)
Authors: Asomoza, R.; Elyukhin, V.A.; Pena-Sierra, R.; Rivera Flores, B.L.

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Strain effect in ZnSe epilayers grown on GaAs substrates
pp. 389-395(7)
Authors: Yu, Y.; Nam, S.; Byungsung; Lee, K.; Yu, P.Y.; Lee, J.; Choi, Y.D.

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Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN
pp. 396-403(8)
Authors: Reifsnider, J.M.; Govindaraju, S.; Holmes, A.L.

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Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors
pp. 404-409(6)
Authors: Chichibu, S.F.; Sugiyama, M.; Ohbasami, M.; Hayakawa, A.; Mizutani, T.; Nakanishi, H.; Negami, T.; Wada, T.

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Computer simulations of fluid flow and heat transfer in metal strip heating zone crystal growth
pp. 410-418(9)
Authors: Zhang, S.Y.; Ni, D.Q.; Song, Y.T.; Wu, X.

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Reciprocal space mapping of GaNxAs1-x grown by RF plasma-assisted solid source molecular beam epitaxy
pp. 427-431(5)
Authors: Loke, W.K.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Fan, W.J.

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Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3m
pp. 432-438(7)
Authors: Meng, X.Q.; Xu, B.; Jin, P.; Ye, X.L.; Zhang, Z.Y.; Li, C.M.; Wang, Z.G.

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Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions
pp. 439-443(5)
Authors: Zhang, Y.; Du, G.; Liu, D.; Wang, X.; Ma, Y.; Wang, J.; Yin, J.; Yang, X.; Hou, X.; Yang, S.

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Elaboration and characterisation of Bi2Se3 thin films using ditertiarybutylselenide as a precursor by MOCVD system
pp. 444-449(6)
Authors: Al Bayaz, A.; Giani, A.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

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A study on the growth of Yb:YVO4 single crystal
pp. 450-455(6)
Authors: Chen, J.Z.; Guo, F.; Zhuang, N.; Lan, J.; Hu, X.; Gao, S.

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GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE
pp. 456-462(7)
Authors: Kim, E.; Rusakova, I.; Berishev, I.; Tempez, A.; Bensaoula, A.

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A numerical study of thermal conditions in the THM growth of HgTe
pp. 463-475(13)
Authors: Martnez-Tomas, M.C.; Munoz-Sanjose, V.; Reig, C.

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Nucleation of gas hydrates
pp. 476-489(14)
Authors: Kashchiev, D.; Firoozabadi, A.

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Effects of ferrocyanide ions on NaCl crystallization in porous stone
pp. 503-516(14)
Authors: Rodriguez-Navarro, C.; Linares-Fernandez, L.; Doehne, E.; Sebastian, E.

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Striations in the KCl single crystals grown from aqueous solutions
pp. 517-521(5)
Authors: Kamei, T.; Inoue, T.; Yanagiya, S.; Mori, A.

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Novel seeding technique for growing KTiOPO4 single crystals by the TSSG method
pp. 522-525(4)
Authors: Bhaumik, I.; Ganesamoorthy, S.; Bhatt, R.; Sundar, R.; Karnal, A.K.; Wadhawan, V.K.

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Growth of organic nonlinear optical material: hippuric acid
pp. 526-530(5)
Authors: Bhat, M.N.; Dharmaprakash, S.M.

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Growth of dendrites in a rapidly solidified Al-23 Sr alloy
pp. 531-538(8)
Authors: Zhang, Z.; Bian, X.; Wang, Y.

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Approximate material-balance solution to the moving meniscus model of detached solidification
pp. 546-560(15)
Authors: Wang, Y.; Regel, L.L.; Wilcox, W.R.

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Author Index
pp. 561-567(7)

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Subject Index
pp. 568-569(2)

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