Journal of Crystal Growth

Editorial Board
pp. ii-ii(1)

Germanium effect on void defects in Czochralski silicon
pp. 371-374(4)
Authors: Yang D.; Yu X.; Ma X.; Xu J.; Li L.; Que D.

Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy
pp. 375-380(6)
Authors: Zamir S.; Meyler B.; Salzman J.

Initial stage of liquid phase heteroepitaxy of III-V ternary alloys
pp. 381-388(8)
Authors: Asomoza R.; Elyukhin V.A.; Pena-Sierra R.; Rivera Flores B.L.

Strain effect in ZnSe epilayers grown on GaAs substrates
pp. 389-395(7)
Authors: Yu Y.-M.; Nam S.; Byungsung O; Lee K.-S.; Yu P.Y.; Lee J.; Choi Y.D.

Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN
pp. 396-403(8)
Authors: Reifsnider J.M.; Govindaraju S.; Holmes A.L.

Use of diethylselenide as a less-hazardous source for preparation of CuInSe₂ photo-absorbers by selenization of metal precursors
pp. 404-409(6)
Authors: Chichibu S.F.; Sugiyama M.; Ohbasami M.; Hayakawa A.; Mizutani T.; Nakanishi H.; Negami T.; Wada T.

Computer simulations of fluid flow and heat transfer in metal strip heating zone crystal growth
pp. 410-418(9)
Authors: Zhang S.Y.; Ni D.Q.; Song Y.T.; Wu X.

Low temperature growth and structural characterization of nanocrystalline silicon films
pp. 419-426(8)
Authors: Wong T.-C.; Yu C.-C.; Wu J.-J.

Reciprocal space mapping of GaN_xAs_1-x grown by RF plasma-assisted solid source molecular beam epitaxy
pp. 427-431(5)
Authors: Loke W.K.; Yoon S.F.; Ng T.K.; Wang S.Z.; Fan W.J.

Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3m
pp. 432-438(7)
Authors: Meng X.Q.; Xu B.; Jin P.; Ye X.L.; Zhang Z.Y.; Li C.M.; Wang Z.G.

Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions
pp. 439-443(5)
Authors: Zhang Y.; Du G.; Liu D.; Wang X.; Ma Y.; Wang J.; Yin J.; Yang X.; Hou X.; Yang S.

Elaboration and characterisation of Bi₂Se₃ thin films using ditertiarybutylselenide as a precursor by MOCVD system
pp. 444-449(6)
Authors: Al Bayaz A.; Giani A.; Foucaran A.; Pascal-Delannoy F.; Boyer A.

A study on the growth of Yb:YVO₄ single crystal
pp. 450-455(6)
Authors: Chen J.Z.; Guo F.; Zhuang N.; Lan J.; Hu X.; Gao S.

GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE
pp. 456-462(7)
Authors: Kim E.; Rusakova I.; Berishev I.; Tempez A.; Bensaoula A.

A numerical study of thermal conditions in the THM growth of HgTe
pp. 463-475(13)
Authors: Martnez-Tomas M.C.; Munoz-Sanjose V.; Reig C.

Nucleation of gas hydrates
pp. 476-489(14)
Authors: Kashchiev D.; Firoozabadi A.

Calcareous scales formed by cathodic protection-an assessment of characteristics and kinetics
pp. 490-502(13)
Authors: Neville A.; Morizot A.P.

Effects of ferrocyanide ions on NaCl crystallization in porous stone
pp. 503-516(14)
Authors: Rodriguez-Navarro C.; Linares-Fernandez L.; Doehne E.; Sebastian E.

Striations in the KCl single crystals grown from aqueous solutions
pp. 517-521(5)
Authors: Kamei T.; Inoue T.; Yanagiya S.-i.; Mori A.

Novel seeding technique for growing KTiOPO₄ single crystals by the TSSG method
pp. 522-525(4)
Authors: Bhaumik I.; Ganesamoorthy S.; Bhatt R.; Sundar R.; Karnal A.K.; Wadhawan V.K.

Growth of organic nonlinear optical material: hippuric acid
pp. 526-530(5)
Authors: Bhat M.N.; Dharmaprakash S.M.

Growth of dendrites in a rapidly solidified Al-23 Sr alloy
pp. 531-538(8)
Authors: Zhang Z.; Bian X.; Wang Y.

Structural defects and characteristics of lead fluoride (PbF₂) crystals grown by non-vacuum Bridgman method
pp. 539-545(7)
Authors: Ren G.; Shen D.; Wang S.; Yin Z.

Approximate material-balance solution to the moving meniscus model of detached solidification
pp. 546-560(15)
Authors: Wang Y.; Regel L.L.; Wilcox W.R.

Author Index
pp. 561-567(7)

Subject Index
pp. 568-569(2)