Publisher: Elsevier

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Volume 243, Number 1, August 2002

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Contents Continued
pp. vi-vi(1)

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Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
pp. 8-12(5)
Authors: Higashino, T.; Kawamura, Y.; Fujimoto, M.; Amano, M.; Yokoyama, T.; Inoue, N.

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ZnO thin film grown on silicon by metal-organic chemical vapor deposition
pp. 13-18(6)
Authors: Wang, X.; Yang, S.; Yang, X.; Liu, D.; Zhang, Y.; Wang, J.; Yin, J.; Liu, D.; Ong, H.C.; Du, G.

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The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
pp. 19-24(6)
Authors: Chen, Z.; Lu, D.; Han, P.; Liu, X.; Wang, X.; Li, Y.; Yuan, H.; Lu, Y.; Bing, L.; Zhu, Q.; Wang, Z.; Wang, X.; Yan, L.

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A novel application to quantum dot materials to the active region of superluminescent diodes
pp. 25-29(5)
Authors: Zhang, Z.Y.; Meng, X.Q.; Jin, P.; Li, C.M.; Qu, S.C.; Xu, B.; Ye, X.L.; Wang, Z.G.

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Thermal desorption effects in chemical vapor deposition of silicon nanoparticles
pp. 30-40(11)
Authors: Leach, W.T.; Zhu, J.; Ekerdt, J.G.

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Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy
pp. 41-46(6)
Authors: Zhang, R.; Yoon, S.F.; Tan, K.H.; Sun, Z.Z.; Huang, Q.F.

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Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system
pp. 55-65(11)
Authors: Kakimoto, K.; Tashiro, A.; Shinozaki, T.; Ishii, H.; Hashimoto, Y.

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Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing
pp. 66-70(5)
Authors: Lee, D.Y.; Kim, J.S.; Kim, D.L.; Kim, K.H.; Son, J.S.; Kim, I.S.; Han, B.K.; Bae, I.H.

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Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
pp. 71-76(6)
Authors: Zhang, Z.; Yang, S.; Zhang, F.; Li, D.; Chen, Y.; Wang, Z.

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Defect structure of Ge-doped CdTe
pp. 77-86(10)
Authors: Fiederle, M.; Babentsov, V.; Franc, J.; Fauler, A.; Benz, K.W.; James, R.B.; Cross, E.

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Optimization of process conditions of selective epitaxial growth for elevated source/drain CMOS transistor
pp. 87-93(7)
Authors: Nakahata, T.; Sugihara, K.; Maruno, S.; Abe, Y.; Ozeki, T.

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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN
pp. 94-102(9)
Authors: Chen, W.M.; McNally, P.J.; Jacobs, K.; Tuomi, T.; Danilewsky, A.N.; Zytkiewicz, Z.R.; Lowney, D.; Kanatharana, J.; Knuuttila, L.; Riikonen, J.

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Investigations of growth of self-assembled GaInN-GaN islands on SiC substrate by metalorganic vapor phase epitaxy
pp. 103-107(5)
Authors: Kobayashi, Y.; Perez-Solorzano, V.; Off, J.; Kuhn, B.; Grabeldinger, H.; Schweizer, H.; Scholz, F.

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Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process
pp. 108-116(9)
Authors: Walker, J.S.; Henry, D.; BenHadid, H.

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Growth and characterization of CdS and doped CdS single crystals
pp. 117-123(7)
Authors: Sankar, N.; Sanjeeviraja, C.; Ramachandran, K.

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Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy
pp. 129-133(5)
Authors: Kawasaki, K.; Nakamatsu, I.; Hirayama, H.; Tsutsui, K.; Aoyagi, Y.

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Growth of epitaxial multilayers consisting of alternately stacked superconducting YBa2Cu3O7- and colossal magnetoresistive La1-xPbxMnO3 layers
pp. 134-142(9)
Authors: Singh, A.; Aswal, D.K.; Sen, S.; Viswanadham, C.S.; Goswami, G.L.; Gupta, L.C.; Gupta, S.K.; Yakhmi, J.V.; Sahni, V.C.

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Process of crystallization in thin amorphous tin oxide film
pp. 143-150(8)
Authors: Kobayashi, T.; Kimura, Y.; Suzuki, H.; Sato, T.; Tanigaki, T.; Saito, Y.; Kaito, C.

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The growth and annealing of single crystalline ZnO films by low-pressure MOCVD
pp. 151-156(6)
Authors: Ye, J.; Gu, S.; Zhu, S.; Chen, T.; Hu, L.; Qin, F.; Zhang, R.; Shi, Y.; Zheng, Y.

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Growth of Bi4Ge3O12 single crystal by the micro-pulling-down method from bismuth rich composition
pp. 157-163(7)
Authors: Shim, J.B.; Lee, J.H.; Yoshikawa, A.; Nikl, M.; Yoon, D.H.; Fukuda, T.

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Thin film crystal growth of BaZrO3 at low oxygen partial pressure
pp. 164-169(6)
Authors: Kitano, Y.; Matsui, T.; Fujimura, N.; Morii, K.; Ito, T.

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Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
pp. 170-184(15)
Authors: Danielsson, O.; Henry, A.; Janzen, E.

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Fabrication of periodic domain structure in '-Gd2(MoO4)3 crystal
pp. 185-189(5)
Authors: Yuan, Q.; Ren, T.; Luo, G.; Pan, S.; Xu, J.; Zhu, Y.; Zhu, S.

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Dynamics of crystal size distributions with size-dependent rates
pp. 204-213(10)
Authors: Madras, G.; McCoy, B.J.

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Low-temperature hydrothermal synthesis of pure metastable -manganese sulfide (MnS) crystallites
pp. 214-217(4)
Authors: Zhang, Y.; Wang, H.; Wang, B.; Yan, H.; Yoshimura, M.

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Carbon nanotube synthesis using a magnetic fluid via thermal chemical vapor deposition
pp. 224-229(6)
Authors: Cho, Y.; Choi, G.; Hong, S.; Kim, D.

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