Publisher: Elsevier

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Volume 240, Number 3, May 2002

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Contents Continued
pp. iv-iv(1)

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Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy
pp. 333-339(7)
Authors: Lee, S.C.; Dawson, L.R.; Brueck, S.R.J.

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Crystal structure, carrier concentration and IR-sensitivity of PbTe thin films doped with Ga by two different methods
pp. 340-346(7)
Authors: Samoylov, A.M.; Sharov, M.K.; Buchnev, S.A.; Khoviv, A.M.; Dolgopolova, E.A.

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Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0001) sapphire
pp. 347-354(8)
Authors: Gonsalves, M.; Kim, W.; Narayanan, V.; Mahajan, S.

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Role of interfacial crystallites in the crystallization of α-Fe2O3/α-Al2O3(0001) thin films
pp. 355-362(8)
Authors: Joo Doh, S.; Ho Je, J.; Sik Cho, T.

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Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
pp. 368-372(5)
Authors: Feng, G.; Zheng, X.H.; Fu, Y.; Zhu, J.J.; Shen, X.M.; Zhang, B.S.; Zhao, D.G.; Wang, Y.T.; Yang, H.; Liang, J.W.

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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
pp. 373-381(9)
Authors: Nakajima, K.; Kusunoki, T.; Azuma, Y.; Usami, N.; Fujiwara, K.; Ujihara, T.; Sazaki, G.; Shishido, T.

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Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties
pp. 382-388(7)
Authors: Li, Z.; Bang, H.; Piao, G.; Sawahata, J.; Akimoto, K.

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Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
pp. 395-400(6)
Authors: He, J.; Xu, B.; Wang, Z.G.; Qu, S.C.; Liu, F.Q.; Zhu, T.W.; Ye, X.L.; Zhao, F.A.; Meng, X.Q.

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Investigation of semi-insulating oxygen-doped GaAs
pp. 401-406(6)
Authors: Lazarescu, M.F.; Pantelica, D.; Manea, A.S.; Ghita, R.V.; Negoita, F.

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The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy
pp. 423-430(8)
Authors: Novikov, S.V.; Winser, A.J.; Bell, A.; Harrison, I.; Li, T.; Campion, R.P.; Staddon, C.R.; Davis, C.S.; Ponce, F.A.; Foxon, C.T.

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Synthesis and characterization of PbSe and PbSe/PbS core-shell colloidal nanocrystals
pp. 431-438(8)
Authors: Sashchiuk, A.; Langof, L.; Chaim, R.; Lifshitz, E.

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Nucleation and ripening of seeded InAs/GaAs quantum dots
pp. 439-444(6)
Authors: Bennett, A.J.; Murray, R.

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Density and surface tension of molten calcium fluoride
pp. 445-453(9)
Authors: Chen, X.; Jinguu, S.; Nishimura, S.; Oyama, Y.; Terashima, K.

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Growth and characterization of CdSe single crystals by modified vertical vapor phase method
pp. 454-458(5)
Authors: Zhu, S.; Zhao, B.; Jin, Y.; Yang, W.; Chen, X.; den, Y.

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Growth of NaBi(WO4)2 crystal by modified-Bridgman method
pp. 459-462(4)
Authors: Shi, H.; Shen, D.; Ren, G.; Zhang, H.; Gong, B.; Deng, Q.

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High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
pp. 463-466(4)
Authors: Zhang, X.T.; Liu, Y.C.; Zhi, Z.Z.; Zhang, J.Y.; Lu, Y.M.; Xu, W.; Shen, D.Z.; Zhong, G.Z.; Fan, X.W.; Kong, X.G.

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High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn
pp. 467-472(6)
Authors: Chen, S.J.; Liu, Y.C.; Ma, J.G.; Zhao, D.X.; Zhi, Z.Z.; Lu, Y.M.; Zhang, J.Y.; Shen, D.Z.; Fan, X.W.

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The photoluminescence of ZnO thin films grown on Si (100) substrate by plasma-enhanced chemical vapor deposition
pp. 479-483(5)
Authors: Li, B.S.; Liu, Y.C.; Zhi, Z.Z.; Shen, D.Z.; Lu, Y.M.; Zhang, J.Y.; Fan, X.W.

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Ammonia-free chemical bath deposition of CdS films: tailoring the nanocrystal sizes
pp. 484-488(5)
Authors: Nemec, P.; Nemec, I.; Nahalkova, P.; Knzek, K.; Maly, P.

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Bi20TiO32 nanocones prepared from Bi-Ti-O mixture by metalorganic decomposition method
pp. 489-494(6)
Authors: Hou, Y.; Wang, M.; Xu, X.; Wang, H.; Shang, S.; Wang, D.; Yao, W.

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Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum
pp. 501-507(7)
Authors: Kakanakova-Georgieva, A.; Yakimova, R.; Gueorguiev, G.K.; Linnarsson, M.K.; Syvajarvi, M.; Janzen, E.

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Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
pp. 508-512(5)
Authors: Carlos Rojo, J.; Schowalter, L.J.; Gaska, R.; Shur, M.; Khan, M.A.; Yang, J.; Koleske, D.D.

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Effect of NH3 on the growth characterization of TiN films at low temperature
pp. 513-520(8)
Authors: Huang, H.H.; Hon, M.H.; Wang, M.C.

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Synthesis, thermal and magnetic properties of new metal iodate: (LiFe1/3)(IO3)2
pp. 526-530(5)
Authors: Lan, Y.C.; Chen, X.L.; Xie, A.Y.; Jiang, P.Z.; Lin, C.L.

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Growth and characterisation of benzaldehyde semicarbazone (BSC) single crystals
pp. 545-548(4)
Authors: Ramesh Babu, R.; Vijayan, N.; Gopalakrishnan, R.; Ramasamy, P.

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Solvent effects on the growth kinetics of subtilisin crystals
pp. 549-559(11)
Authors: Pan, X.; Glatz, C.E.

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A new thermal assembly design for the directional solidification of transparent alloys
pp. 560-568(9)
Authors: Liu, S.; Mazumder, P.; Trivedi, R.

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The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy - [J. Crystal Growth 235 (2001) 411-414]
pp. 611-611(1)
Authors: Wang, Z.; Sun, D.; Hu, J.; Cui, D.; Xu, X.; Wang, D.; Zhang, Y.; Wang, M.; Wang, H.; Chen et al., H.

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Author Index
pp. 612-618(7)

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Subject Index
pp. 619-620(2)

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