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Publisher: Elsevier

Volume 236, Number 1, March 2002

Jan Czochralski-father of the Czochralski method
pp. 1-4(4)
Author: Tomaszewski, P.E.

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Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition
pp. 5-9(5)
Authors: Bhattacharya, P.; Sharma, T.K.; Singh, S.; Ingale, A.; Kukreja, L.M.

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SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition
pp. 10-20(11)
Authors: Hartmann, J.M.; Loup, V.; Rolland, G.; Holliger, P.; Laugier, F.; Vannuffel, C.; Semeria, M.N.

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Organometallic vapor phase epitaxy of GaN on Si(111) with a -Al2O3(111) epitaxial intermediate layer
pp. 21-25(5)
Authors: Wakahara, A.; Oishi, H.; Okada, H.; Yoshida, A.; Koji, Y.; Ishida, M.

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Epitaxial growth of InGaAs on misoriented GaAs(100) substrate by metal-organic vapor phase epitaxy
pp. 31-36(6)
Authors: Takano, Y.; Masuda, M.; Kobayashi, K.; Kuwahara, K.; Fuke, S.; Shirakata, S.

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Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing
pp. 37-40(4)
Authors: Shimura, T.; Hosoi, T.; Fukuda, K.; Umeno, M.; Ogura, A.

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Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample
pp. 41-45(5)
Authors: da Silva, M.J.; Quivy, A.A.; Gonzalez-Borrero, P.P.; Marega, E.

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Nitrogen effect on grown-in defects in Czochralski silicon crystals
pp. 46-50(5)
Authors: Umeno, S.; Ono, T.; Tanaka, T.; Asayama, E.; Nishikawa, H.; Hourai, M.; Katahama, H.; Sano, M.

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In-situ HRTEM observation of the melting-crystallization process of silicon
pp. 51-58(8)
Authors: Nishizawa, H.; Hori, F.; Oshima, R.

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High temperature growth of InN on GaP(111)B substrate using a new two-step growth method
pp. 59-65(7)
Authors: Bhuiyan, A.G.; Yamamoto, A.; Hashimoto, A.; Ito, Y.

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Pre-treatment of GaN template for homoepitaxial growth by radio-frequency molecular beam epitaxy
pp. 66-70(5)
Authors: Kubo, S.; Nanba, Y.; Okazaki, T.; Manabe, S.; Kurai, S.; Taguchi, T.

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Regular arrays of GaN nanorods
pp. 71-76(6)
Authors: Li, Z.J.; Chen, X.L.; Li, H.J.; Xu, Y.P.

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Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer
pp. 77-84(8)
Authors: Lu, Y.; Liu, X.; Lu D.-C.; Yuan, H.; Chen, Z.; Fan, T.; Li, Y.; Han, P.; Wang, X.; Wang, D.; Wang, Z.

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Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si
pp. 85-89(5)
Authors: Liao, M.Y.; Meng, X.M.; Zhou, X.T.; Hu, J.Q.; Wang, Z.G.

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Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells
pp. 90-94(5)
Authors: Han, Y.J.; Guo, L.W.; Bao, C.L.; Huang, Q.; Zhou, J.M.

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Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers
pp. 95-100(6)
Authors: Kim, M.H.; Choi, Y.; Yi, J.H.; Yang, M.; Jeon, J.; Khym, S.; Leem, S.

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Nitrogen doping of epitaxial silicon carbide
pp. 101-112(12)
Authors: Forsberg, U.; Danielsson, O.; Henry, A.; Linnarsson, M.K.; Janzen, E.

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In-situ monitoring system of the position and temperature at the crystal-solution interface
pp. 125-131(7)
Authors: Sazaki, G.; Azuma, Y.; Miyashita, S.; Usami, N.; Ujihara, T.; Fujiwara, K.; Murakami, Y.; Nakajima, K.

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InGaP lattice-mismatched LPE growth on GaAs substrates by epitaxial lateral overgrowth technique
pp. 132-136(5)
Authors: Nakayama, S.; Kaneko, M.; Aizawa, S.; Kashiwa, K.; Takahashi, N.S.

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Nanofabrication of grid-patterned substrate by holographic lithography
pp. 141-144(4)
Authors: Huang, C.J.; Zhu, X.P.; Li, C.; Zuo, Y.H.; Cheng, B.W.; Li, D.Z.; Luo, L.P.; Yu, J.Z.; Wang, Q.M.

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InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects
pp. 145-154(10)
Authors: Riel, B.J.; Hinzer, K.; Moisa, S.; Fraser, J.; Finnie, P.; Piercy, P.; Fafard, S.; Wasilewski, Z.R.

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Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates
pp. 155-164(10)
Authors: Nosho, B.Z.; Bennett, B.R.; Aifer, E.H.; Goldenberg, M.

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Growth of diamond films on grooved Si substrates
pp. 176-180(5)
Authors: Yamamoto, H.; Naoi, Y.; Shintani, Y.

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The variation of the equilibrium of chemical reactions in the process of (Bi2Te3)(Sb2Te3)(Sb2Se3) crystal growth
pp. 181-190(10)
Authors: Sokolov, O.B.; Skipidarov, S.Y.; Duvankov, N.I.

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The growth and absorption characterization of Cr, Ca:YAG by liquid-phase epitaxy
pp. 191-196(6)
Authors: Haibo, R.; Jianbo, C.; Zonglin, H.; Tao, G.; Huarong, G.

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Crystal growth and characterization of new high Curie temperature (1-x)BiScO3-xPbTiO3 single crystals
pp. 210-216(7)
Authors: Zhang, S.; Lebrun, L.; Rhee, S.; Eitel, R.E.; Randall, C.A.; Shrout, T.R.

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Elaboration of Bi2Se3 by metalorganic chemical vapour deposition
pp. 217-220(4)
Authors: Giani, A.; Al Bayaz, A.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

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Low-temperature growth conditions of YBa2Cu3O7- using Ba-Cu-Ag-O-F solvent
pp. 221-224(4)
Authors: Yamada, Y.; Suga, T.; Hirabayashi, I.

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Epitaxial growth of SiC in a chimney CVD reactor
pp. 225-238(14)
Authors: Ellison, A.; Zhang, J.; Henry, A.; Janzen, E.

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Morphology and dielectric properties of Ba0.5Sr0.5TiO3 thin films on annealed (100) MgO
pp. 239-247(9)
Authors: Cukauskas, E.J.; Kirchoefer, S.W.; Chang, W.

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Growth of CuInS2 crystals by a hot-press method
pp. 253-256(4)
Authors: Komaki, H.; Yoshino, K.; Seto, S.; Yoneta, M.; Akaki, Y.; Ikari, T.

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Crystal growth of AgIn1-XGaXSe2 crystals grown by a vertical gradient freeze method
pp. 257-260(4)
Authors: Yoshino, K.; Komaki, H.; Itani, K.; Chichibu, S.F.; Akaki, Y.; Ikari, T.

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Very low-pressure VLP-CVD growth of high quality -Al2O3 films on silicon by multi-step process
pp. 261-266(6)
Authors: Tan, L.; Zan, Y.; Wang, J.; Wang, Q.; Yu, Y.; Wang, S.; Liu, Z.; Lin, L.

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Behaviors of trace amounts of metal-fluoride impurities in CaF2 single-crystal grown by Stockbarger's method
pp. 281-289(9)
Authors: Yonezawa, T.; Matsuo, K.; Tamada, H.; Kawamoto, Y.

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Growth of α-BaB2O4 single crystals from melts at various compositions: comparison of optical properties
pp. 290-296(7)
Authors: Solntsev, V.P.; Tsvetkov, E.G.; Gets, V.A.; Antsygin, V.D.

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Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature
pp. 297-304(8)
Authors: Syvajarvi, M.; Yakimova, R.; Janzen, E.

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Single crystals of Tb0.3Dy0.7Fe2 grown by Czochralski method with cold crucible
pp. 305-310(6)
Authors: Chen, J.; Gao, S.; Wang, W.; Zhang, M.; Wu G.-h.; Li, Y.; Qu, J.; Xu, G.

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Growth and characterization of a new nonlinear optical mixed borate crystal
pp. 318-322(5)
Authors: Ishwar Bhat, S.; Mohan Rao, P.; Upadyaya, V.; Nagaraja, H.S.

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Solvothermal growth of vaterite in the presence of ethylene glycol, 1,2-propanediol and glycerin
pp. 357-362(6)
Authors: Li, Q.; Ding, Y.; Li, F.; Xie, B.; Qian, Y.

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The effect of aminoacids on the crystal growth of calcium carbonate
pp. 363-370(8)
Authors: Manoli, F.; Kanakis, J.; Malkaj, P.; Dalas, E.

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Sol-gel preparation of Ge nanocrystals embedded in SiO2 glasses
pp. 371-375(5)
Authors: Yang, H.; Wang, X.; Shi, H.; Wang, F.; Gu, X.; Yao, X.

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Growth of nonlinear optical -glycine crystals
pp. 376-380(5)
Authors: Bhat, M.N.; Dharmaprakash, S.M.

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Growth and characterization of NMBA (4-nitro-4'-methyl benzylidene aniline) single crystals
pp. 381-392(12)
Authors: Srinivasan, K.; Biravaganesh, R.; Gandhimathi, R.; Ramasamy, P.

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Crystallization kinetics of epsomite influenced by pH-value and impurities
pp. 400-406(7)
Authors: Al-Jibbouri, S.; Strege, C.; Ulrich, J.

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Growth of semicarbazone of benzophenone single crystals
pp. 407-412(6)
Authors: Vijayan, N.; Ramesh Babu, R.; Gopalakrishnan, R.; Dhanuskodi, S.; Ramasamy, P.

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Hybrid model simulation of the cluster deposition process
pp. 429-433(5)
Authors: Hongo, K.; Mizuseki, H.; Kawazoe, Y.; Wille, L.T.

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In situ monitoring of growth of ice from supercooled water by a new electromagnetic method
pp. 434-440(7)
Authors: Shibkov, A.A.; Golovin, Y.I.; Zheltov, M.A.; Korolev, A.A.; Leonov, A.A.

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Synthesis and characterisation of boron carbide whiskers and thin elongated platelets
pp. 466-476(11)
Authors: Carlsson, M.; Garca-Garca, F.J.; Johnsson, M.

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Single-crystal growth of the Al-Cu-Ru icosahedral quasicrystal from the ternary melt
pp. 477-481(5)
Authors: Guo, J.Q.; Hasegawa, H.; Tsai, A.P.; Takeuchi, S.

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