Publisher: Elsevier

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Volume 234, Number 2, January 2002

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Antisite incorporation during epitaxial growth of GaAs
pp. 279-284(6)
Authors: Gandouzi, M.; Bourgoin, J.C.; El Mir, L.; Stellmacher, M.; Ortiz, V.

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Transient convection of Te doped GaSb induced by g-jitter
pp. 285-295(11)
Authors: Saghir, M.Z.; Chacha, M.; Islam, M.R.

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Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography
pp. 296-304(9)
Authors: Ma, M.; Irisawa, T.; Ogawa, T.; Huang, X.; Taishi, T.; Hoshikawa, K.

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Growth of crack-free AlGaN film on high-temperature thin AlN interlayer
pp. 305-310(6)
Authors: Lee I.-H.; Kim, T.G.; Park, Y.

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Growth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation
pp. 311-317(7)
Authors: Tobenas, S.; Larramendi, E.M.; Puron, E.; de Melo1, O.; Cruz-Gandarilla, F.; Hesiquio-Garduno, M.; Tamura, M.

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors
pp. 318-322(5)
Authors: Kurtz, S.; Reedy, R.; Barber, G.D.; Geisz, J.F.; Friedman, D.J.; McMahon, W.E.; Olson, J.M.

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Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN
pp. 323-326(4)
Authors: Kurtz, S.; Reedy, R.; Keyes, B.; Barber, G.D.; Geisz, J.F.; Friedman, D.J.; McMahon, W.E.; Olson, J.M.

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Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy
pp. 327-336(10)
Authors: Shurtleff, J.K.; Lee, R.T.; Fetzer, C.M.; Stringfellow, G.B.; Lee, S.; Seong, T.Y.

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Dislocation assessment of CdZnTe by chemical etching on both {111}B and {211}B faces
pp. 337-342(6)
Authors: Jianrong, Y.; Huiming, G.; Xinqiang, C.; Weizheng, F.; Li, H.

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules
pp. 343-348(6)
Authors: Foxon, C.T.; Harrison, I.; Novikov, S.V.; Li, T.; Campion, R.P.; Staddon, C.R.; Davis, C.S.; Winser, A.J.; Kovarsky, A.P.; Ber, B.J.

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Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
pp. 354-358(5)
Authors: Jia, R.; Jiang, D.S.; Liu, H.Y.; Wei, Y.Q.; Xu, B.; Wang, Z.G.

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(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition
pp. 359-363(5)
Authors: Yang, J.; Chen, N.; Liu, Z.; Yang, S.; Chai, C.; Liao, M.; He, H.

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InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4
pp. 364-368(5)
Authors: Hao, Z.; Ren, Z.; Xiong, B.; Guo, W.; Luo, Y.

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells
pp. 369-372(4)
Authors: Lampert, W.V.; Eiting, C.J.; Smith, S.A.; Mahalingam, K.; Grazulis1, L.; Haas, T.W.

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Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer
pp. 379-383(5)
Authors: Wang, X.; Du, G.; Yin, J.; Li, M.; Li, M.; Qu, Y.; Bo, B.; Yang, S.

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Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy
pp. 384-390(7)
Authors: Brown, P.D.; Fay, M.; Bock, N.; Marlafeka, S.; Cheng, T.S.; Novikov1, S.V.; Davis, C.S.; Campion, R.P.; Foxon, C.T.

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Self-assembled InAs quantum dots on InP nano-templates
pp. 391-398(8)
Authors: Lefebvre, J.; Poole, P.J.; Fraser, J.; Aers, G.C.; Chithrani, D.; Williams, R.L.

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Observation of carbon clusters of a few nanometers in the oxyacetylene diamond CVD process
pp. 399-403(5)
Authors: Ahn, H.; Park, H.; Kim, D.; Hwang, N.M.

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Influence of polarized PZT on the crystal growth of calcium phosphate
pp. 404-410(7)
Authors: Sun, X.; Ma, C.; Wang, Y.; Li, H.

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Crystal growth, structure and magnetic behavior of ytterbium cobalt gallium oxide YbCoGaO4
pp. 411-414(4)
Authors: Dabkowska, H.A.; Dabkowski, A.; Luke, G.M.; Gaulin, B.D.

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Crystal growth and electrical properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 perovskite single crystals
pp. 415-420(6)
Authors: Zhang, S.; Rehrig, P.W.; Randall, C.; Shrout, T.R.

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Brush plating of tin(II) selenide thin films
pp. 421-426(6)
Authors: Subramanian, B.; Sanjeeviraja, C.; Jayachandran, M.

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Structural and optical properties of MgxZn1-xO thin films prepared by the sol-gel method
pp. 427-430(4)
Authors: Zhao, D.; Liu, Y.; Shen, D.; Lu, Y.; Zhang, J.; Fan, X.

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Floating zone growth of LaB6 crystals from the CaB6-added feed rods
pp. 431-434(4)
Authors: Otani, S.; Aizawa, T.; Yajima, Y.

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Growth of AlN-SiC solid solutions by sequential supply epitaxy
pp. 435-439(5)
Authors: Avramescu, A.; Hirayama, H.; Aoyagi, Y.; Tanaka, S.

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Preparation and properties of TiSi2 thin films from TiCl4/H2 by plasma enhanced chemical vapor deposition
pp. 440-446(7)
Authors: Fouad, O.A.; Yamazato, M.; Era, M.; Nagano, M.; Hirai, T.; Usui, I.

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Epitaxial growth of dhcp samarium: single crystal films and Sm/Nd superlattices
pp. 447-453(7)
Authors: Dufour, C.; Dumesnil, K.; Soriano, S.; Pierre, D.; Senet, C.; Mangin, P.

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Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates
pp. 454-458(5)
Authors: Yoo, D.C.; Lee, J.Y.; Kim, I.S.; Kim, Y.T.

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Catalytic effect of Ni for activation of Mg-doped GaN in N2 and N2O
pp. 459-462(4)
Authors: Waki, I.; Fujioka, H.; Oshima, M.; Miki, H.; Okuyama, M.

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Growth and characterization of Tm, Ho-codoped Lu3Al5O12 single crystals by the Czochralski technique
pp. 463-468(6)
Authors: Sato, H.; Shimamura, K.; Sudesh, V.; Ito, M.; Machida, H.; Fukuda, T.

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Growth and characterization of a novel UV nonlinear optical crystal: [MnHg(SCN)4(H2O)2].2C4H9N O
pp. 469-479(11)
Authors: Wang, X.Q.; Xu, D.; Lu, M.; Yuan, D.; Huang, J.; Cheng, X.; Xie, T.; Zhang, G.; Wang, S.; Guo, S.; Liu, J.; Yang, Z.; Wang, P.

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Ex situ atomic force microscopy studies of growth mechanisms of cadmium mercury thiocyanate crystals
pp. 480-486(7)
Authors: Jiang, X.N.; Xu, D.; Sun, D.L.; Yuan, D.R.; Lu, M.K.; Guo, S.Y.; Zhang, G.H.

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Crystal growth of HgZnTe alloy by directional solidification in low gravity environment
pp. 487-497(11)
Authors: Su C.-H.; Sha1, Y.; Lehoczky, S.L.; Szofran, F.R.; Gillies, D.C.; Scripa, R.N.; Cobb, S.D.; Wang, J.C.

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Surface chemistry of non-stoichiometric TiNx films grown on (100)Si substrate by DC reactive magnetron sputtering
pp. 498-504(7)
Authors: Lee Y.-K.; Kim, J.; Lee Y.-K.; Lee, M.; Kim, D.; Jin, D.; Nam, T.; Ahn, H.; Park, D.

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Growth dynamics of the epitaxial SrO film on SrTiO3(001)
pp. 505-508(4)
Authors: Takahashi, R.; Matsumoto, Y.; Ohsawa, T.; Lippmaa, M.; Kawasaki, M.; Koinuma, H.

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Distinctly different two-dimensional ordering alignments of InGaAs island arrays on GaAs(311)B and AlGaAs(311)B surfaces
pp. 509-515(7)
Authors: Xu, H.Z.; Akahane, K.; Song, H.Z.; Okada, Y.; Kawabe, M.

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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
pp. 516-522(7)
Authors: Sazaki, G.; Miyashita, S.; Nokura, M.; Ujihara, T.; Fujiwara, K.; Usami, N.; Nakajima, K.

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Correlation of KH2PO4 hillock chirality with absolute structure
pp. 523-528(6)
Authors: Kaminsky, W.; Haussuhl, E.; Bastin, L.D.; Anand Subramony, J.; Kahr, B.

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Flux growth of baryte-type BaSO4 from chloridic alkaline metal solvents
pp. 533-538(6)
Authors: Ehrentraut, D.; Pollnau, M.

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Effect of rare-earth dopants on the growth and properties of triglycine sulphate single crystals
pp. 545-550(6)
Authors: Muralidharan, R.; Mohankumar, R.; Ushasree, P.M.; Jayavel, R.; Ramasamy, P.

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Investigation of platinum films grown on sapphire (0001) by molecular beam epitaxy
pp. 561-568(8)
Authors: Zhou, H.; Wochner, P.; Schops, A.; Wagner, T.

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Growth orientation of carbon nanotubes by thermal chemical vapor deposition
pp. 584-588(5)
Authors: Zhu, S.; Su, C.; Cochrane, J.C.; Lehoczky, S.; Cui, Y.; Burger, A.

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Pyramids on {100} NaCl after formamide etching
pp. 589-598(10)
Authors: Radenovic, N.; Enckevort, W.v.

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Spontaneous generation of charged clusters of a few nanometers during thermal evaporation of copper
pp. 599-602(4)
Authors: Lee, B.S.; Barnes, M.C.; Kim, D.; Hwang, N.M.

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A new mechanism for misfit dislocation generation: superdislocations associated with Ruddlesden-Popper planar defects
pp. 603-609(7)
Authors: Wu, J.S.; Jia, C.L.; Urban, K.; Hao, J.H.; Xi, X.X.

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Erratum to ''Effects of pressure on growth kinetics of tetragonal lysozyme crystals'' J Crystal Growth 208 (2000) 638-644
pp. 610-610(1)
Authors: Suzuki, Y.; Miyashita, S.; Sazaki, G.; Nakada, T.; Sawada, T.; Komatsu, H.

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