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Publisher: Elsevier

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Volume 234, Number 1, January 2002

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Diamond formation using Fe3C as a carbon source at high temperature and high pressure
pp. 1-4(4)
Authors: Yin L.-W.; Li, M.; Cui, J.; Zou, Z.; Liu, P.; Hao, Z.

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Crystallization of diamond from CO2 fluid at high pressure and high temperature
pp. 5-8(4)
Authors: Yamaoka, S.; Shaji Kumar, M.D.; Kanda, H.; Akaishi, M.

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Formation of α-Si3N4 whiskers with addition of NaN3 as catalyst
pp. 9-11(3)
Authors: Cao, Y.G.; Chen, H.; Li, J.T.; Ge, C.C.; Tang, S.Y.; Tang, J.X.; Chen, X.

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Te distribution in space grown GaSb
pp. 12-24(13)
Authors: Voloshin, A.E.; Nishinaga, T.; Ge, P.; Huo, C.

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Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy
pp. 25-31(7)
Authors: Li, Z.; Bang, H.; Piao, G.; Sawahata, J.; Akimoto, K.; Kinoshita, H.; Watanabe, K.

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Global simulation of a silicon Czochralski furnace
pp. 32-46(15)
Authors: Li, M.; Li, Y.; Imaishi, N.; Tsukada, T.

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Controlling transport phenomena in the Czochralski crystal growth process
pp. 47-62(16)
Authors: Gunzburger, M.; Ozugurlu, E.; Turner, J.; Zhang, H.

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Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE
pp. 63-69(7)
Authors: Chaussende, D.; Ferro, G.; Monteil, Y.

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Catalytic growth of high quality GaN micro-crystals
pp. 70-76(7)
Authors: Ahn, S.H.; Lee, S.H.; Nahm, K.S.; Suh, E.K.; Hong, M.H.

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Statistical investigation on morphology development of gallium nitride in initial growth stage
pp. 77-84(8)
Authors: Yuan, H.; Lu D.-C.; Liu, X.; Chen, Z.; Han, P.; Wang, X.; Wang, D.

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Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
pp. 85-90(6)
Authors: Gao, Y.Z.; Kan, H.; Gao, F.S.; Gong, X.Y.; Yamaguchi, T.

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Detached growth of gallium doped germanium
pp. 91-98(8)
Authors: Dold, P.; Szofran, F.R.; Benz, K.W.

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Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
pp. 99-104(6)
Authors: Lu, L.W.; Fong, W.K.; Zhu, C.F.; Leung, B.H.; Surya, C.; Wang, J.; Ge, W.

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Growth of Si-doped InAs quantum dots and annealing effects on size distribution
pp. 105-109(5)
Authors: Kim, J.S.; Yu, P.W.; Leem J.-Y.; Lee, J.I.; Noh, S.K.; Kim, J.S.; Kim, G.H.; Kang, S.; Ban, S.I.; Kim, S.G.; Jang, Y.D.; Lee, U.H.; Yim, J.S.; Lee, D.

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Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy
pp. 110-114(5)
Authors: Kim, G.H.; Choi, J.B.; Leem J.-Y.; Lee, J.I.; Noh, S.K.; Kim, J.S.; Kim, J.S.; Kang, S.; Ban, S.I.

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A geometrical model of GaN morphology in initial growth stage
pp. 115-120(6)
Authors: Yuan, H.; Chen, Z.; Lu D.-C.; Liu, X.; Han, P.; Wang, X.

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Kinetics of self-assembled island formation: Part I-Island density
pp. 132-138(7)
Authors: Johansson, J.; Seifert, W.

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Kinetics of self-assembled island formation: Part II-Island size
pp. 139-144(6)
Authors: Johansson, J.; Seifert, W.

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Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
pp. 145-152(8)
Authors: Lu D.-C.; Duan, S.

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Study on the lateral growth of silicon films from metal solutions with temperature gradient
pp. 153-158(6)
Authors: Kita, K.; Wen, C.; Otomo, J.; Yamada, K.; Komiyama, H.; Takahashi, H.

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Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique
pp. 159-163(5)
Authors: Arulchakkaravarthi, A.; Jayavel, P.; Santhanaraghavan, P.; Ramasamy, P.

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Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification
pp. 164-170(7)
Authors: Dariel, M.P.; Dashevsky, Z.; Jarashnely, A.; Shusterman, S.; Horowitz, A.

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Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties
pp. 171-175(5)
Authors: Wang, Y.W.; Zhang, L.D.; Wang, G.Z.; Peng, X.S.; Chu, Z.Q.; Liang, C.H.

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Crystallization kinetics and mechanism of the LixNi2-xO2 (02CO3 and NiO
pp. 176-183(8)
Authors: Lin, S.P.; Fung, K.Z.; Hon, Y.M.; Hon, M.H.

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Crystal growth of undoped semi-insulating CdTe
pp. 184-189(6)
Authors: Zha, M.; Gorog, T.; Zappettini, A.; Bissoli, F.; Zanotti, L.; Paorici, C.

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Growth and stoichiometry of THM-bulk single crystals of CuAlSe2
pp. 190-196(7)
Authors: Shim, Y.; Horikawa1, S.; Kikuno2, Y.; Yamamoto, N.

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Characterization of strain distribution in quantum dots by X-ray diffraction
pp. 197-201(5)
Authors: Uragami, T.; Acosta, A.S.; Fujioka, H.; Mano, T.; Ohta, J.; Ofuchi, H.; Oshima, M.; Takagi, Y.; Kimura, M.; Suzuki, T.

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Growth kinetics of CO2 hydrate just below melting point of ice
pp. 220-226(7)
Authors: Kawamura, T.; Komai, T.; Yamamoto, Y.; Nagashima, K.; Ohga, K.; Higuchi, K.

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Experimental simulations of the biomineralization phenomena in avian eggshells using BaCO3 aggregates grown inside an alkaline silica matrix
pp. 227-236(10)
Authors: Reyes-Grajeda, J.P.; Jauregui-Zuniga, D.; Batina, N.; Salmon-Salazar, M.; Moreno, A.

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The growth and dissolution of sodium chloride in a fluidized bed crystallizer
pp. 237-246(10)
Authors: Al-Jibbouri, S.; Ulrich, J.

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The effect of amphiphilic additives on the growth and morphology of Aspergillus niger acid proteinase A crystals
pp. 247-254(8)
Authors: Tanaka, S.; Ataka, M.; Kubota, T.; Soga, T.; Homma, K.; Lee, W.C.; Tanokura, M.

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Morphological control of Ca3Al2(OH)12
pp. 255-262(8)
Authors: Fogg, A.M.; Freij, A.J.; Oliveira, A.; Rohl, A.L.; Ogden, M.I.; Parkinson, G.M.

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Sonochemical synthesis of copper selenides nanocrystals with different phases
pp. 263-266(4)
Authors: Xu, S.; Wang, H.; Zhu J.-J.; Chen, H.

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Usefulness of experiments with model fluid for thermocapillary convection-effect of Prandtl number on two-dimensional thermocapillary convection
pp. 272-278(7)
Authors: Zeng, Z.; Mizuseki, H.; Shimamura, K.; Fukuda, T.; Kawazoe, Y.; Higashino, K.

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