Journal of Crystal Growth

Editorial(s)
pp. vii-vii(1)
Author: Kuech T.F.

Contents + Manuscript received
pp. ix

Report on the growth of bulk aluminum nitride and subsequent substrate preparation
pp. 317-321(5)
Authors: Carlos Rojo J.; Slack G.A.; Morgan K.; Raghothamachar B.; Dudley M.; Schowalter¹ L.J.

Structural and optical properties of thick freestanding GaN templates
pp. 322-328(7)
Authors: Freitas J.A.; Braga G.C.B.; Moore W.J.; Tischler J.G.; Culbertson J.C.; Fatemi M.; Park S.S.; Lee S.K.; Park Y.

Growth of GaN on (111) Si: a route towards self-supported GaN
pp. 329-334(6)
Authors: Lahreche H.; Nataf G.; Feltin E.; Beaumont B.; Gibart P.

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
pp. 335-341(7)
Authors: Davis R.F.; Gehrke T.; Linthicum K.J.; Preble E.; Rajagopal P.; Ronning C.; Zorman C.; Mehregany M.

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy
pp. 342-351(10)
Authors: Gu S.; Zhang R.; Shi Y.; Zheng Y.; Zhang L.; Dwikusuma F.; Kuech T.F.

III-N ternary epi-layers grown on the GaN bulk crystals
pp. 352-356(5)
Authors: Leszczynski M.; Prystawko P.; Czernecki R.; Lehnert J.; Suski T.; Perlin P.; Wisniewski P.; Grzegory I.; Nowak G.; Porowski S.; Albrecht M.

Growth of GaN nanowires by direct reaction of Ga with NH₃
pp. 357-365(9)
Authors: He¹ M.; Zhou P.; Mohammad S.N.; Harris G.L.; Halpern J.B.; Jacobs R.; Sarney W.L.; Salamanca-Riba L.

Al_xGa_1-xN for solar-blind UV detectors
pp. 366-370(5)
Authors: Sandvik P.; Mi K.; Shahedipour F.; McClintock R.; Yasan A.; Kung P.; Razeghi M.

Modeling of threading dislocation reduction in growing GaN layers
pp. 371-390(20)
Authors: Mathis¹ S.K.; Romanov A.E.; Chen L.F.; Beltz G.E.; Pompe W.; Speck J.S.

Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes
pp. 391-396(6)
Authors: Kuball M.; Hayes J.M.; Shi Y.; Edgar J.H.; Prins A.D.; van Uden N.W.A.; Dunstan D.J.

Effective electronic masses in wurtzite and zinc-blende GaN and AlN
pp. 397-406(10)
Authors: Persson C.; Ferreira da Silva A.; Ahuja R.; Johansson B.

First-principle calculations of optical properties of wurtzite AlN and GaN
pp. 407-414(8)
Authors: Persson C.; Ahuja R.; Ferreira da Silva A.; Johansson B.

Cubic III-nitrides-a key to understand radiative recombination in nitride heterostructures?
pp. 415-419(5)
Author: Lischka K.

Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
pp. 420-427(8)
Authors: Fernandez J.R.L.; Moyses Araujo C.; Ferreira da Silva A.; Leite J.R.; Sernelius B.E.; Tabata A.; Abramof E.; Chitta V.A.; Persson C.; Ahuja R.; Pepe I.; As D.J.; Frey T.; Schikora D.; Lischka K.

New valence control and spin control method in GaN and AlN by codoping and transition atom doping
pp. 428-436(9)
Authors: Katayama-Yoshida H.; Kato R.; Yamamoto T.

Author index
pp. 437-438(2)

Subject index
pp. 439-439(1)