Journal of Crystal Growth

Preface
pp. xi-xi(1)

Contents
pp. xiii-xvii(5)

Engineering analysis of microdefect formation during silicon crystal growth
pp. 97-109(13)
Authors: Brown R.A.; Wang Z.; Mori T.

ZnO Schottky ultraviolet photodetectors
pp. 110-113(4)
Authors: Liang S.; Sheng H.; Liu Y.; Huo Z.; Lu Y.; Shen H.

Semiconductor crystal optimization of gamma detection
pp. 114-117(4)
Author: Lachish U.

Thick films of X-ray polycrystalline mercuric iodide detectors
pp. 118-123(6)
Authors: Schieber M.; Hermon H.; Zuck A.; Vilensky A.; Melekhov L.; Shatunovsky R.; Meerson E.; Saado Y.; Lukach M.; Pinkhasy E.; Ready S.E.; Street R.A.

Performance of TAS crystal for AOTF imaging
pp. 124-128(5)
Authors: Singh N.B.; Suhre D.; Gupta N.; Rosch W.; Gottlieb M.

Characterization of thallium bromide crystals for radiation detector applications
pp. 129-133(5)
Authors: Hitomi K.; Matsumoto M.; Muroi O.; Shoji T.; Hiratate Y.

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
pp. 134-140(7)
Authors: Davis R.F.; Gehrke T.; Linthicum K.J.; Zheleva T.S.; Preble E.A.; Rajagopal P.; Zorman C.A.; Mehregany M.

Thermodynamics and nucleation kinetics of Al_xGa_1-xN/GaN and In_xGa_1-xN/GaN heterostructures
pp. 141-144(4)
Authors: Varadarajan E.; Dhanasekaran R.; Ramasamy P.

Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD
pp. 145-149(5)
Authors: Juang F.-S.; Chu T.K.

Growth of high quality GaN layers with AlN buffer on Si(111) substrates
pp. 150-154(5)
Authors: Chen P.; Zhang R.; Zhao Z.M.; Xi D.J.; Shen B.; Chen Z.Z.; Zhou Y.G.; Xie S.Y.; Lu W.F.; Zheng Y.D.

High-temperature solution growth of intermetallic single crystals and quasicrystals
pp. 155-161(7)
Authors: Canfield P.C.; Fisher I.R.

Growth of single crystals (Ca,Sr)₁₀Cu₁₇O₂₉ by ''melted band'' method from Bi-containing fluxes and formation of subsidiary phases
pp. 162-167(6)
Authors: Maltsev V.; Leonyuk L.; Babonas G.J.; Reza A.; Dapkus L.

Growth of phthalocyanine doped anthracene crystal using a three-zone furnace by vacuum sublimation method
pp. 168-172(5)
Authors: Selvaraj S.L.; Xavier F.P.

Preparation of (001)-oriented PZT thin films on silicon wafers using pulsed laser deposition
pp. 173-177(5)
Authors: Zhao J.; Lu L.; Thompson C.V.; Lu Y.F.; Song W.D.

Surface engineering along the close-packed direction of SrTiO₃
pp. 178-182(5)
Authors: Doan T.-D.; Giocondi J.L.; Rohrer G.S.; Salvador P.A.

Thermodynamic stability and kinetics of Y-Ba-Cu-O film growth at high rates in atomic and molecular oxygen
pp. 183-189(7)
Authors: Jo W.; Peng L.S.-J.; Wang W.; Ohnishi T.; Marshall A.F.; Hammond R.H.; Beasley M.R.; Peterson E.J.

RETRACTED: Substrate preparations in epitaxial ZnO film growth
pp. 190-196(7)
Authors: Zhu S.; Su C.-H.; Lehoczky S.L.; Harris M.T.; Callahan M.J.; McCarty P.; George M.A.

Control of morphology and orientation of ZnO thin films grown on SiO₂/Si substrates
pp. 197-201(5)
Authors: Muthukumar S.; Gorla C.R.; Emanetoglu N.W.; Liang S.; Lu Y.

Study of defects and interfaces in epitaxial ZnO films on (1120) Al₂O₃ grown by electron cyclotron resonance-assisted molecular beam epitaxy
pp. 202-207(6)
Authors: Lim S.-H.; Shindo D.; Kang H.-B.; Nakamura K.

Structural characterization of epitaxial ZnO films grown on (0001) Al₂O₃ by electron cyclotron resonance-assisted molecular beam epitaxy
pp. 208-213(6)
Authors: Lim S.-H.; Shindo D.; Kang H.-B.; Nakamura K.

High temperature X-ray diffraction study of LiGaO₂
pp. 214-220(7)
Authors: Rawn C.J.; Chaudhuri J.

Dependence of temperature gradient on growth rate in CZ silicon
pp. 221-224(4)
Authors: Natsume A.; Inoue N.; Tanahashi K.; Mori A.

Improved phosphorus injection synthesis for bulk InP
pp. 225-230(6)
Authors: Higgins W.M.; Iseler G.W.; Bliss D.F.; Bryant G.; Tassev V.; Jafri I.; Ware R.M.; Carlson D.J.

Comparison of inductively coupled plasma-mass spectrometry, neutron activation analysis, and Hall effect techniques using antimony doped germanium
pp. 231-235(5)
Authors: Keefer L.A.; Matthiesen D.H.

Solution growth of thick III-V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for ''virtual substrates''
pp. 236-243(8)
Authors: Mauk M.G.; Tata A.N.; Cox J.A.

Hydrogen neutralization effect in bulk N-type LEC InP materials
pp. 244-248(5)
Authors: Sun N.; Wu X.; Wu X.; Zhao Y.; Cao L.; Zhao Q.; Guo W.; Zhang J.; Bi K.; Sun T.

Preparation conditions of chromium doped ZnSe and their infrared luminescence properties
pp. 249-256(8)
Authors: Burger A.; Chattopadhyay K.; Ndap J.-O.; Ma X.; Morgan S.H.; Rablau C.I.; Su C.-H.; Feth S.; Page R.H.; Schaffers K.I.; Payne S.A.

Effect of pulling rates on the quality of YIG single crystal fibers
pp. 257-263(7)
Authors: Hu C.-C.; Chen J.-C.; Huang C.-H.

Oscillatory growth of directionally solidified ammonium chloride dendrites
pp. 264-267(4)
Authors: Gudgel K.A.; Jackson K.A.

Quasi-thermodynamic model of SiGe epitaxial growth
pp. 268-273(6)
Authors: Segal A.S.; Karpov S.Y.; Sid'ko A.P.; Makarov Y.N.

Numerical computation of sapphire crystal growth using heat exchanger method
pp. 274-281(8)
Authors: Lu C.-W.; Chen J.-C.

Phase-field model of crystal grains
pp. 282-288(7)
Authors: Lobkovsky A.E.; Warren J.A.

Phase-field approach to crystal growth in the presence of strain
pp. 289-293(5)
Authors: Kassner K.; Misbah C.; Muller J.; Kappey J.; Kohlert P.

Modeling of point defect behavior by the stress due to impurity doping in growing silicon
pp. 294-298(5)
Authors: Tanahashi K.; Harada H.; Koukitsu A.; Inoue N.

Modeling of transport processes and kinetics of silicon carbide bulk growth
pp. 299-306(8)
Authors: Chen Q.-S.; Zhang H.; Ma R.-H.; Prasad V.; Balkas C.M.; Yushin N.K.

Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth
pp. 307-311(5)
Authors: Bogdanov M.V.; Galyukov A.O.; Karpov S.Y.; Kulik A.V.; Kochuguev S.K.; Ofengeim D.K.; Tsiryulnikov A.V.; Ramm M.S.; Zhmakin A.I.; Makarov Y.N.

Impact of source material on silicon carbide vapor transport growth process
pp. 312-316(5)
Authors: Wellmann P.J.; Hofmann D.; Kadinski L.; Selder M.; Straubinger T.L.; Winnacker A.

Growth related distribution of secondary phase inclusions in 6H-SiC single crystals
pp. 317-321(5)
Authors: Rost H.-J.; Dolle J.; Doerschel J.; Siche D.; Schulz D.; Wollweber J.

Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide
pp. 322-329(8)
Authors: Mauk M.G.; Feyock B.W.; Sharma A.; Hunsperger R.G.

Enhanced bulk polysilicon production using silicon tubes
pp. 330-334(5)
Authors: Jafri I.; Chandra M.; Zhang H.; Prasad V.; Reddy C.; Amato-Wierda C.; Landry M.; Ciszek T.

High-quality and low-temperature epitaxial Si films deposited at very high deposition rate
pp. 335-339(5)
Authors: Bergmann R.B.; Oberbeck L.; Wagner T.A.

Crystalline silicon thin-film (CSiTF) solar cells on SSP and on ceramic substrates
pp. 340-347(8)
Authors: Eyer A.; Haas F.; Kieliba T.; Oszwald D.; Reber S.; Zimmermann W.; Warta W.

Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions
pp. 348-353(6)
Authors: Mauk M.G.; Curran J.P.

Sulphur-terminated silicon surfaces for the epitaxial growth of chalcopyrite semiconductors
pp. 354-358(5)
Authors: Metzner H.; Hahn T.

Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic-photoelectrolysis cells
pp. 359-365(7)
Authors: Mauk M.G.; Tata A.N.; Feyock B.W.

Epitaxial growth of (001)-oriented and (116)-oriented SrBi₂Ta₂O₉ thin films by chemical solution deposition method
pp. 366-371(6)
Authors: Kim J.H.; Ha T.-J.; Cheon C.I.; Lange F.F.

Epitaxial growth of BGaAs and BGaInAs by MOCVD
pp. 372-376(5)
Authors: Geisz J.F.; Friedman D.J.; Kurtz S.; Olson J.M.; Swartzlander A.B.; Reedy R.C.; Norman A.G.

Evolution of surface structure and phase separation in GaInAsSb
pp. 377-383(7)
Authors: Wang C.A.; Calawa D.R.; Vineis C.J.

The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
pp. 384-390(7)
Authors: Biefeld R.M.; Cederberg J.G.; Peake G.M.; Kurtz S.R.

Enabling Terabit Systems through MOVPE
pp. 391-396(6)
Authors: Campbell K.T.; Joyner C.H.; Ebert C.W.; Robertson A.; Wilt D.P.; Zilko J.L.

Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors
pp. 397-404(8)
Authors: Pan N.; Welser R.E.; Lutz C.R.; DeLuca P.M.; Han B.; Hong K.

Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment
pp. 405-409(5)
Authors: Fu Q.; Begarney M.J.; Li C.H.; Law D.C.; Hicks R.F.

A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces
pp. 410-414(5)
Authors: McMahon W.E.; Olson J.M.

MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates
pp. 415-419(5)
Authors: Kim J.; Cho S.; Sanz-Hervas A.; Majerfeld A.; Kim B.W.

In-situ reflectance monitoring of GaSb substrate oxide desorption
pp. 420-425(6)
Authors: Vineis C.J.; Wang C.A.; Jensen K.F.

MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor
pp. 426-430(5)
Authors: Agert C.; Lanyi P.; Bett A.W.

The effect of diffusion on formation of self-assembled CdSe quantum dots
pp. 431-434(4)
Authors: Yang Y.; Shen D.Z.; Zhang J.Y.; Fan X.W.; Zhen Z.H.; Zhao X.W.; Zhao D.X.; Liu Y.N.

Optical absorption and electron paramagnetic resonance of Fe ions in KDP crystals
pp. 435-439(5)
Authors: Garces N.Y.; Stevens K.T.; Halliburton L.E.; Yan M.; Zaitseva N.P.; DeYoreo J.J.

Defect segregation in CdGeAs₂
pp. 440-444(5)
Authors: Schunemann P.G.; Setzler S.D.; Pollak T.M.; Ptak A.J.; Myers T.H.

Material and laser characterizations of intermediate compositions of Ce:LiSr_xCa_1-xAlF₆
pp. 445-448(4)
Authors: Castillo V.K.; Quarles G.J.; Chang R.S.F.

Progress in the growth of Yb:S-FAP laser crystals
pp. 449-453(5)
Authors: Schaffers K.I.; Tassano J.B.; Waide P.A.; Payne S.A.; Morris R.C.

Growth conditions and composition of terbium aluminum garnet single crystals grown by the micro pulling down technique
pp. 454-457(4)
Authors: Ganschow S.; Klimm D.; Epelbaum B.M.; Yoshikawa A.; Doerschel J.; Fukuda T.

Influence of [K]/[Li] and [Li]/[Nb] ratios in melts on the TSSG growth and SHG characteristics of potassium lithium niobate crystals
pp. 458-464(7)
Authors: Xu X.W.; Chong T.C.; Zhang G.Y.; Kumagai H.

Bulk growth of high quality nonlinear optical crystals of L-arginine tetrafluoroborate (L-AFB)
pp. 465-469(5)
Authors: Owens C.; Bhat K.; Wang W.S.; Tan A.; Aggarwal M.D.; Penn B.G.; Frazier D.O.

Growth of vanillin crystals for second harmonic generation (SHG) applications in the near-IR wavelength region
pp. 470-473(4)
Authors: Singh O.P.; Singh Y.P.; Singh N.; Singh N.B.

Crystal growth and hydration effects in morpholinium 4-hydroxybenzoate (M4HB)
pp. 474-478(5)
Authors: Bahra G.S.; Chaloner P.A.; Dutta L.M.; Healy W.; Hitchcock P.B.

Growth and spectra characterization of Ce and Eu doped SBN crystals
pp. 479-483(5)
Authors: Li M.-H.; Chong T.-C.; Xu X.-W.; Kumagai H.

Nb:BST: Crystal growth and ferroelectric properties
pp. 484-488(5)
Authors: Varatharajan R.; Madeswaran S.; Jayavel R.

Blue SHG characteristics and homogeneity of the TSSG grown potassium lithium niobate (KLN) crystal with high Li₂O content
pp. 489-494(6)
Authors: Chong T.C.; Xu X.W.; Zhang G.Y.; Kumagai H.

Cracking mechanism of the potassium lithium niobate crystal related to its internal structure
pp. 495-500(6)
Authors: Zhang G.; Chong T.-C.; Xu X.; Kumagai H.

New wide-band nonlinear optics CsGeCl₃ crystal
pp. 501-504(4)
Authors: Qing-Tian G.; Chang-Shui F.; Wei S.; Xiang-Wen W.; Qi-Wei P.

Preparation and thermophysical properties of AgGaTe₂ crystals
pp. 505-511(7)
Authors: Burger A.; Ndap J.-O.; Cui Y.; Roy U.; Morgan S.; Chattopadhyay K.; Ma X.; Faris K.; Thibaud S.; Miles R.; Mateen H.; Goldstein J.T.; Rawn C.J.

Thermal conductivity measurement in lead bromide
pp. 512-515(4)
Authors: Singh N.B.; Coriell S.R.; Duval W.M.B.; Mani S.S.; Green K.; Glicksman M.E.

Effect of void location on segregation patterns in microgravity solidification
pp. 516-521(6)
Authors: Kassemi M.; Barsi S.; Kaforey M.; Matthiesen D.

Gravity-related transport process in off-axis sputtering deposition
pp. 522-527(6)
Authors: Zhu S.; Su C.-H.; Carpenter P.; Lehoczky S.

GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour
pp. 528-533(6)
Authors: Mauk M.G.; Feyock B.W.; Cotter J.E.

Epitaxially grown Fe/Ag ultrathin films on GaAs and their application to wideband microwave notch filter
pp. 534-539(6)
Authors: Wu W.; Lee C.C.; Tsai C.S.; Su J.; So W.; Yoo H.J.; Chuang R.; Hopster H.J.

Effect of H₂ addition on characteristics of TiN films deposited by APCVD
pp. 540-543(4)
Authors: Huang H.-H.; Hon M.-H.

As-soak control of the InAs-on-GaSb interface
pp. 544-549(6)
Authors: Kaspi R.; Steinshnider J.; Weimer M.; Moeller C.; Ongstad A.

Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy
pp. 550-555(6)
Authors: Chang C.-A.; Wu C.-Z.; Wang P.-Y.; Guo X.-J.; Wu Y.-T.; Liang C.-Y.; Hwang F.-C.; Jiang W.-C.; Lay F.-J.; Sung L.-W.; Lin H.-H.

Response surface modeling of the composition of AlAs_ySb_1-y alloys grown by molecular beam epitaxy
pp. 556-560(5)
Authors: Gopaladasu P.; Cecchi J.L.; Malloy K.J.; Kaspi R.

200mm GaAs crystal growth by the temperature gradient controlled LEC method
pp. 561-565(5)
Authors: Seidl A.; Eichler S.; Flade T.; Jurisch M.; Kohler A.; Kretzer U.; Weinert B.

Shaped crystal growth of 50cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG)
pp. 566-571(6)
Authors: Garcia D.; Ouellette M.; Mackintosh B.; Kalejs J.P.

Growth of the world's largest sapphire crystals
pp. 572-579(8)
Authors: Khattak C.P.; Schmid F.

Multiple batch recharging for industrial CZ silicon growth
pp. 580-585(6)
Authors: Fickett B.; Mihalik G.

Author Index
pp. 586-593(8)

Subject Index
pp. 594-595(2)