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Publisher: Elsevier

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Volume 225, Number 1, May 2001

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Observation of inhomogeneity in congruent LiTaO3 crystal
pp. 6-8(3)
Authors: Hu, X.B.; Jiang, H.D.; Liu, H.; Jiang, S.S.; Li, Q.; Wang, J.Y.; Zhang, C.Q.; Teng, B.; Tian, Y.L.; Huang, W.X.

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Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction
pp. 9-15(7)
Authors: Sun, Y.T.; Rodrguez Messmer, E.; Soderstrom, D.; Jahan, D.; Lourdudoss, S.

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The stress and strain in cubic films on (113), emphasizing Ge on Si(113)
pp. 16-22(7)
Authors: Bottomley, D.J.; Omi, H.; Ogino, T.

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Nature and occurrence of defects in 6H-SiC Lely crystals
pp. 23-33(11)
Authors: Tuominen1, M.; Ellison, A.; Tuomi, T.; Yakimova, R.; Milita, S.; Janzen, E.

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Laser ultrasonic sensing of the melting and solidification of cadmium telluride
pp. 34-44(11)
Authors: Queheillalt, D.T.; Wadley, H.N.G.

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Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
pp. 45-49(5)
Authors: Fu, Y.; Yang, H.; Zhao, D.G.; Zheng, X.H.; Li, S.F.; Sun, Y.P.; Feng, Z.H.; Wang, Y.T.; Duan, L.H.

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Modeling halogen chemical vapor deposition for III-V semiconductor compounds
pp. 50-58(9)
Authors: Mimila-Arroyo, J.; Daz-Reyes, J.

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Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method
pp. 59-66(8)
Authors: Kinoshita, K.; Kato, H.; Iwai, M.; Tsuru, T.; Muramatsu, Y.; Yoda, S.

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Experimental observation of local heteroepitaxy between cubic-C3N4 and Ti2N in CNx/TiNy bilayers prepared by ion beam sputtering
pp. 67-72(6)
Authors: Tian, Y.J.; Yu, D.L.; He, J.L.; Xiao, F.R.; Wang, T.S.; Li, D.C.; Li, L.; Zheng, G.; Yanagisawa, O.

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Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE
pp. 73-78(6)
Authors: Ohta, J.; Fujioka, H.; Sumiya, M.; Koinuma, H.; Oshima, M.

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Synthesis of SnS2 nanocrystals via a solvothermal process
pp. 92-95(4)
Authors: Hai, B.; Tang, K.; Wang, C.; An, C.; Yang, Q.; Shen, G.; Qian, Y.

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