Publisher: Elsevier

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Volume 224, Number 1, April 2001

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Room temperature growth of rod-like nanocrystalline Ag2Te in mixed solvent
pp. 1-4(4)
Authors: Jiang, Y.; Wu, Y.; Yang, Z.; Xie, Y.; Qian, Y.

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A chemical assessment of the suitability of allyl-iso-propyltelluride as a Te precursor for metal organic vapour phase epitaxy
pp. 21-31(11)
Authors: Hails, J.E.; Cole-Hamilton, D.J.; Stevenson, J.; Bell, W.; Foster, D.F.; Ellis, D.

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Photoluminescence studies of ZnSe starting materials and vapor grown bulk crystals
pp. 32-40(9)
Authors: Su C.-H.; Feth1, S.; Wang, L.J.; Lehoczky, S.L.

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Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
pp. 41-46(6)
Authors: Zhang, Y.C.; Huang, C.J.; Xu, B.; Ye, X.L.; Ding, D.; Wang, J.Z.; Li, Y.F.; Liu, F.Q.; Wang, Z.G.

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Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAs substrates by molecular beam epitaxy
pp. 47-51(5)
Authors: Yan F.-W.; Zhang, W.; Zhang, R.; Cui, L.; Liang, C.; Liu, S.

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Dynamics of native point defects in H2 and Ar plasma-etched narrow gap (HgCd)Te
pp. 52-58(7)
Authors: Belas, E.; Grill, R.; Franc, J.; Moravec, P.; Varghova, R.; Hoschl, P.; Sitter, H.; Toth, A.L.

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Effect of gadolinium (Gd3+) addition on the monophased field and crystal growth of Ba2NaNb5O15 (BNN)
pp. 59-66(8)
Authors: Lebbou, K.; Itagaki, H.; Yoshikawa, A.; Fukuda, T.; Boulon, G.; Brenier, A.

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Flux growth and optical spectra of NdTa7O19 crystals
pp. 67-73(7)
Authors: Cavalli, E.; Leonyuk, L.I.; Leonyuk, N.I.

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Characterization of Cu doped CdSe thin films grown by vacuum evaporation
pp. 74-82(9)
Authors: Ramaiah, K.S.; Su, Y.K.; Chang, S.J.; Juang, F.S.; Ohdaira, K.; Shiraki, Y.; Liu, H.P.; Chen, I.G.; Bhatnagar, A.K.

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Self-assembled growth of cubic silicon carbide nano-islands on silicon
pp. 83-88(6)
Authors: Yang, J.; Wang, X.; Zhai, G.; Cue, N.; Wang, X.

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Crystal growth of Trans-stilbene by vertical Bridgman technique with modified growth vessels and its characterisation
pp. 89-94(6)
Authors: Arulchakkaravarthi, A.; Santhanaraghavan, P.; Ramasamy, P.

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Kinetics and modeling of sublimation growth of silicon carbide bulk crystal
pp. 101-110(10)
Authors: Chen Q.-S.; Zhang, H.; Prasad, V.; Balkas, C.M.; Yushin, N.K.; Wang, S.

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Characterization of N-doped diamond films by transmission electron microscopy
pp. 111-116(6)
Authors: Jiang, N.; Shinjo, S.; Inaoka, T.; Shintani, Y.; Ito, T.; Makita, H.; Hatta, A.; Hiraki, A.

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In situ catalytic growth of Al2O3 and Si nanowires
pp. 117-121(5)
Authors: Tang, C.C.; Fan, S.S.; Li, P.; Chapelle, M.L.d.l.; Dang, H.Y.

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Growth and characterization of non-linear optical l-hystidine tetrafluoroborate (l-HFB) single crystals
pp. 122-127(6)
Authors: Rajendran, K.V.; Jayaraman, D.; Jayavel, R.; Mohan Kumar, R.; Ramasamy, P.

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Solution-mediated transformation of photographic coupler
pp. 128-133(6)
Authors: Li, N.; Shanks, R.A.; Murphy, D.M.

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Effect of flow due to density change on eutectic growth
pp. 145-154(10)
Authors: Coriell, S.R.; McFadden, G.B.; Mitchell, W.F.; Murray, B.T.; Andrews, J.B.; Arikawa, Y.

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Stable shape of crystal growth face in crystallization from solution under microgravity
pp. 155-164(10)
Authors: Zhu, Z.; Ge, P.; Huo, C.; Chen, D.; Li, C.

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