Publisher: Elsevier

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Volume 222, Number 3, January 2001

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Contents continued
pp. i-i(1)

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Effect of atmosphere on the crystallization temperature of BaB2O4 melt
pp. 427-430(4)
Authors: Sangeeta; Sabharwal, S.C.

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Crystal growth of gallium nitride in supercritical ammonia
pp. 431-434(4)
Authors: Ketchum, D.R.; Kolis, J.W.

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CdTe crystal growth process by the Bridgman method: numerical simulation
pp. 435-451(17)
Authors: Martnez-Tomas, C.; Munoz, V.

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In situ cleaning of GaN/6H-SiC substrates in NH3
pp. 452-458(7)
Authors: McGinnis, A.J.; Thomson, D.; Davis, R.F.; Chen, E.; Michel, A.; Lamb, H.H.

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The effect of p-GaN:Mg layers on the turn-on voltage of p-n junction LED
pp. 459-464(6)
Authors: Lee C.-R.; Seol, K.; Yeon, J.; Choi, D.; Ahn, H.

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(AlGa)As composition profile analysis of trenches overgrown with MOVPE
pp. 465-470(6)
Authors: Hofmann, L.; Rudloff, D.; Rechenberg, I.; Knauer, A.; Christen, J.; Weyers, M.

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In situ etching at InGaAs/GaAs quantum well interfaces
pp. 471-476(6)
Authors: Chirlias, E.; Massies1, J.; Marcadet, X.; Guyaux, J.L.; Grattepain, C.

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Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy
pp. 477-481(5)
Authors: Yasuda, K.; Samion, H.B.; Miyata, M.; Araki, N.; Masuda, Y.; Tomita, Y.

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Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies
pp. 482-496(15)
Authors: Gil-Lafon, E.; Napierala, J.; Castelluci, D.; Pimpinelli, A.; Cadoret, R.; Gerard, B.

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Defect luminescence of GaN grown by pulsed laser deposition
pp. 497-502(6)
Authors: Mah, K.W.; McGlynn, E.; Castro, J.; Lunney, J.G.; Mosnier, J.; O'Mahony, D.; Henry, M.O.

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Nucleation of hexagonal AlN in nitridized AlAs buffer on (001) GaAs substrate
pp. 507-510(4)
Authors: Wan, L.; Duan, X.F.; Chen, H.; Liu, H.F.; Li, Z.Q.; Huang, Q.; Zhou, J.M.

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A study on the growth and the microstructure of double doping Bi2-xPbxSr2-yLayCuOz single crystals
pp. 518-523(6)
Authors: Zhang, J.; Zhang, C.; Xie, H.; Zhang, Y.

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Large crystal growth and measurement of electro-optical coefficients of ADP
pp. 524-527(4)
Authors: Li, Z.; Huang, X.; Wu, D.; Xiong, K.

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Hydrothermal synthesis and characterization of La1-xCexOHSO4 phosphors
pp. 528-533(6)
Authors: Han, Z.; Zhong, C.; Cao, J.; Yu, S.; Tang, K.; Zhao, H.; Qian, Y.

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Facet formation and overgrowth of sub-m W-patterns on GaAs(001) surfaces
pp. 534-537(4)
Authors: Jarlskog, L.; Wernersson, L.; Borgstrom, M.; Seifert, W.; Samuelson, L.

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Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen
pp. 538-548(11)
Authors: Aujol, E.; Napierala, J.; Trassoudaine, A.; Gil-Lafon, E.; Cadoret, R.

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Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation
pp. 558-564(7)
Authors: Lei, C.H.; van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C.

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Preparation and some physical properties of tetradymite-type Sb2Te3 single crystals doped with CdS
pp. 565-573(9)
Authors: Lost'ak, P.; Drasar, C.; Krejcova, A.; Benes, L.; Dyck, J.S.; Chen, W.; Uher, C.

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Phase diagram of the CaS - Ga2S3 system and melt growth of CaGa2S4 single crystals
pp. 574-578(5)
Authors: Komatsu-Hidaka, C.; Takizawa, T.

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In-situ observation of silicon carbide sublimation growth by X-ray topography
pp. 579-585(7)
Authors: Kato, T.; Oyanagi, N.; Yamaguchi, H.; Nishizawa, S.; Nasir Khan, M.; Kitou, Y.; Arai, K.

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Radial growth dynamics of nanowires
pp. 586-590(5)
Authors: Chen, X.L.; Lan, Y.C.; Li, J.Y.; Cao, Y.G.; He, M.

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Reducing the grain size for fabrication of nanocrystalline diamond films
pp. 591-594(4)
Authors: Jiang, N.; Sugimoto, K.; Eguchi, K.; Inaoka, T.; Shintani, Y.; Makita, H.; Hatta, A.; Hiraki, A.

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Effects of bovine amelogenins on the crystal morphology of octacalcium phosphate in a model system of tooth enamel formation
pp. 615-626(12)
Authors: Iijima, M.; Moriwaki, Y.; Takagi, T.; Moradian-Oldak, J.

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Hydrothermal crystal growth of stishovite (SiO2)
pp. 627-629(3)
Authors: Lityagina, L.M.; Dyuzheva, T.I.; Nikolaev, N.A.; Bendeliani, N.A.

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Increase in dissolution rate of sodium chlorate induced by elastic strain
pp. 637-644(8)
Authors: Morel, J.; den Brok, S.W.J.

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Coupled growth behavior in the rapidly solidified Ti-Al peritectic alloys
pp. 645-654(10)
Authors: Liu, Y.C.; Yang, G.C.; Guo, X.F.; Huang, J.; Zhou, Y.H.

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On the boundary conditions at a mush-melt interface
pp. 655-666(12)
Author: Loper, D.E.

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On the stability of (001) Au/Ni artificially modulated structures grown by MBE
pp. 685-691(7)
Authors: Abadias, G.; Schuster, I.; Marty, A.; Gilles, B.; Deutsch, T.

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