Journal of Crystal Growth

Preface
pp. xi-xi(1)
Authors: Onabe K.; Kawai H.

Surface processes in OMVPE - the frontiers
pp. 1-11(11)
Authors: Stringfellow G.B.; Shurtleff J.K.; Lee R.T.; Fetzer C.M.; Jun S.W.

TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
pp. 12-19(8)
Authors: Patriarche G.; Glas F.; Le Roux G.; Largeau L.; Mereuta A.; Ougazzaden¹ A.; Benchimol² J.L.

MOVPE strain layers - growth and application
pp. 20-25(6)
Authors: Strupinski W.; Dillner L.; Sass J.; Kosiel K.; Stake J.; Ingvarson M.; Jakiela R.

Fabrication of a P-stabilized GaP(001)-(2x1) surface at very low pressure studied by LEED, STM, AES, and RHEED
pp. 26-30(5)
Authors: Fukuda Y.; Sekizawa N.; Mochizuki S.; Sanada N.

Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga_0.5In_0.5P grown by metalorganic-vapor-phase epitaxy
pp. 31-36(6)
Authors: Suzuki T.; Ichihashi T.; Kurihara K.; Nishi K.

Perfect ''fractal'' behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy
pp. 37-40(4)
Authors: Isshiki H.; Lee J.S.; Aoyagi Y.; Sugano T.

Impurity incorporation of unintentionally doped Al_xGa_1-xAs during MOVPE
pp. 41-46(6)
Authors: Fujii K.; Kawamura K.; Gotoh¹ H.

Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces
pp. 47-52(6)
Authors: Motohisa J.; Tazaki C.; Akabori M.; Fukui T.

Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
pp. 53-58(6)
Authors: Brunner F.; Bergunde T.; Richter E.; Kurpas P.; Achouche M.; Maaszdorf A.; Wurfl J.; Weyers M.

Heavily carbon-doped GaAsSb grown on InP for HBT applications
pp. 59-65(7)
Authors: Watkins S.P.; Pitts O.J.; Dale C.; Xu¹ X.G.; Dvorak M.W.; Matine N.; Bolognesi C.R.

Carbon doping of InAlAs in LP-MOVPE using CBr₄
pp. 66-69(4)
Authors: Ougazzaden A.; Holavanahalli J.; Geva M.; Smith L.E.

Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H₂ and N₂ carrier gas
pp. 70-74(5)
Authors: Schroeter-Janssen H.; Roehle H.; Franke D.; Bochnia R.; Harde P.; Grote N.

Influence of Zn introduction on Al_xGa_1-xAs crystal growth by MOVPE
pp. 75-80(6)
Authors: Fujii K.; Kawamura K.; Gotoh¹ H.

Synthesis of oxygen-free trimethylindium using second generation adduct purification techniques
pp. 81-85(5)
Authors: Coward K.M.; Jones A.C.; Bickley J.F.; Steiner A.; Smith L.M.; Ravetz M.S.; Rushworth S.A.; Odedra R.; Roberts J.S.; Pemble M.E.

Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices
pp. 86-90(5)
Authors: Smith L.M.; Rushworth S.A.; Ravetz M.S.; Odedra R.; Kanjolia R.; Agert C.; Dimroth F.; Schubert U.; Bett A.W.

On the choice of precursors for the MOVPE-growth of high-quality Al_0.30Ga_0.70As/GaAs v-groove quantum wires with large subband spacing
pp. 91-97(7)
Authors: Kaluza A.; Schwarz A.; Gauer D.; Hardtdegen H.; Nastase N.; Luth H.; Schapers T.; Meertens D.; Maciel A.; Ryan J.; O'Sullivan E.

In situ studies of the effect of silicon on GaN growth modes
pp. 98-105(8)
Authors: Munkholm A.; Stephenson G.B.; Eastman J.A.; Auciello O.; Murty M.V.R.; Thompson C.; Fini P.; Speck J.S.; DenBaars S.P.

In situ observation of superstructures on InP(0 0 1) surface under hydrogen atmospheric environment with using grazing incidence X-ray diffraction
pp. 106-110(5)
Authors: Kawamura T.; Watanabe Y.; Utsumi¹ Y.; Uwai² K.; Matsui J.; Kagoshima Y.; Tsusaka Y.; Fujikawa S.

Real-time monitoring of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy
pp. 111-116(6)
Authors: Lee J.-S.; Masumoto Y.

In situ monitoring of the MOCVD growth of CdS/CdTe
pp. 117-123(7)
Authors: Irvine S.J.C.; Hartley A.; Stafford A.

Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)
pp. 124-128(5)
Authors: Hannappel T.; Visbeck S.; Zorn M.; Zettler J.-T.; Willig F.

Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometry
pp. 129-135(7)
Authors: Feron O.; Nakano Y.; Shimogaki Y.

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE
pp. 136-141(6)
Authors: Nakano T.; Nakano Y.; Shimogaki Y.

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
pp. 142-148(7)
Authors: Stafford A.; Irvine S.J.C.; Bougrioua Z.; Jacobs K.; Moerman I.; Thrush E.J.; Considine L.

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy
pp. 149-155(7)
Authors: Pristovsek M.; Han B.; Zettler J.-T.; Richter W.

In situ reflectance monitoring of overgrowth of InGaAs gratings in laser diode manufacture
pp. 156-159(4)
Authors: Ebert C.W.; Joyner C.H.; Rao G.K.; Venables R.D.

In situ characterisation of epiready III-V substrates for MOVPE
pp. 160-165(6)
Authors: Allwood D.A.; Grant I.R.; Mason N.J.; Palmer R.A.; Walker P.J.

Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
pp. 166-171(6)
Authors: Watkins S.P.; Pinnington T.; Hu J.; Yeo P.; Kluth M.; Mason N.J.; Nicholas R.J.; Walker P.J.

Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD
pp. 172-176(5)
Authors: Wang G.; Ogawa T.; Soga T.; Jimbo T.; Umeno M.

MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
pp. 177-182(6)
Authors: Wolfram P.; Ebert W.; Kreissl J.; Grote N.

Highly selective growth of AlGaInAs assisted by CBr₄ during MOCVD growth
pp. 183-188(6)
Authors: Arakawa S.; Itoh M.; Kasukawa A.

Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices
pp. 189-195(7)
Authors: Sudo¹ S.; Yokoyama Y.; Nakazaki T.; Mori¹ K.; Kudo K.; Yamaguchi M.; Sasaki¹ T.

Wavelength control of arrayed waveguide by MOVPE selective area growth
pp. 196-200(5)
Authors: Kihara T.; Nitta Y.; Suda H.; Miki K.; Shimomura K.

Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices
pp. 201-207(7)
Authors: Son C.-S.; Kim T.G.; Wang X.-L.; Ogura M.

Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE
pp. 208-211(4)
Authors: Fukuhisa T.; Imafuji O.; Mannoh M.; Yuri M.; Itoh K.

GaAs buried growth over tungsten stripe using TEG and TMG
pp. 212-219(8)
Authors: Arai T.; Tobita H.; Miyamoto Y.; Furuya K.

Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth
pp. 220-224(5)
Authors: Soga T.; Arokiaraj J.; Taguchi H.; Jimbo T.; Umeno M.

Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors
pp. 225-230(6)
Authors: Philippens M.; Oligschlaeger R.; Gerard B.; Rushworth S.; Gil-Lafon E.; Napierala J.; Jimenez J.; Heime K.

Progress in crystal growth of nitride semiconductors
pp. 231-239(9)
Author: Akasaki I.

Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition
pp. 240-245(6)
Authors: Ki Kwon H.; Eiting¹ C.J.; Lambert D.J.H.; Wong M.M.; Shelton B.S.; Zhu T.G.; Liliental-Weber Z.; Benamura M.; Dupuis R.D.

MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine
pp. 246-250(5)
Authors: Bourret-Courchesne E.D.; Yu K.-M.; Irvine S.J.C.; Stafford A.; Rushworth S.A.; Smith L.M.; Kanjolia R.

Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model
pp. 251-257(7)
Authors: Krost A.; Blasing J.; Schulze F.; Schon O.; Alam A.; Heuken M.

Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio
pp. 258-261(4)
Authors: Ohba Y.; Sato R.

In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
pp. 262-266(5)
Authors: Figge S.; Bottcher T.; Einfeldt S.; Hommel D.

High hole concentrations in Mg-doped InGaN grown by MOVPE
pp. 267-270(4)
Authors: Kumakura K.; Makimoto T.; Kobayashi N.

AFM measurement of initially grown GaN layer on GaAs substrate
pp. 271-275(5)
Authors: Tanaka H.; Nakadaira A.

Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (100) substrates by inserting an intermediate protection layer
pp. 276-279(4)
Authors: Wu J.; Zhao F.; Onabe K.; Shiraki Y.

AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy
pp. 280-285(6)
Authors: Ishido T.; Funato M.; Hamaguchi A.; Fujita S.; Fujita S.

Growth characteristics of GaN on (001) GaP substrates by MOVPE
pp. 286-292(7)
Authors: Wuu D.-S.; Lin W.-T.; Pan C.-C.; Horng R.-H.

Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
pp. 293-296(4)
Authors: Strittmatter A.; Bimberg D.; Krost A.; Blasing J.; Veit P.

Nucleation control in MOVPE of group III-nitrides on SiC substrate
pp. 297-300(4)
Authors: Nishida T.; Kobayashi N.

Growth and characterization of graded AlGaN conducting buffer layers on n⁺ SiC substrates
pp. 301-304(4)
Authors: Moran B.; Hansen M.; Craven M.D.; Speck J.S.; DenBaars S.P.

Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy
pp. 305-310(6)
Authors: Wakahara A.; Genba J.; Yoshida A.; Saiki H.

Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD
pp. 311-315(5)
Authors: Sugianto; Sani R.A.; Arifin P.; Budiman M.; Barmawi M.

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
pp. 316-326(11)
Authors: Hiramatsu K.; Nishiyama K.; Onishi M.; Mizutani H.; Narukawa M.; Motogaito A.; Miyake H.; Iyechika Y.; Maeda T.

Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N₂ carrier gas
pp. 327-333(7)
Authors: Yamaguchi S.; Kariya M.; Nitta S.; Kashima T.; Kosaki M.; Yukawa Y.; Amano H.; Akasaki I.

A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
pp. 334-337(4)
Authors: Sakai S.; Wang T.; Morishima Y.; Naoi Y.

High-quality GaN films obtained by air-bridged lateral epitaxial growth
pp. 338-344(7)
Authors: Ishibashi A.; Kidoguchi I.; Sugahara G.; Ban Y.

Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure
pp. 345-349(5)
Authors: Ishida M.; Ogawa M.; Orita K.; Imafuji O.; Yuri M.; Sugino T.; Itoh K.

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
pp. 350-355(6)
Authors: Makimoto T.; Kumakura K.; Kobayashi N.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
pp. 356-361(6)
Authors: Lu D.-C.; Wang C.; Yuan H.; Liu X.; Wang X.

Optical properties of undoped and modulation-doped Al_xGa_1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition
pp. 362-367(6)
Authors: Kwon H.K.; Eiting¹ C.J.; Lambert D.J.H.; Shelton B.S.; Wong M.M.; Zhu T.G.; Dupuis R.D.

Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
pp. 368-372(5)
Authors: Kim D.-J.; Moon Y.-T.; Song K.-M.; Choi C.-J.; Ok Y.-W.; Seong T.-Y.; Park S.-J.

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence
pp. 373-377(5)
Authors: Shee S.K.; Kwon Y.H.; Lam J.B.; Gainer G.H.; Park G.H.; Hwang S.J.; Little B.D.; Song J.J.

Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy
pp. 378-381(4)
Authors: Kurimoto M.; Takano T.; Yamamoto J.; Ishihara Y.; Horie M.; Tsubamoto M.; Kawanishi H.

The reaction mechanisms for precursors in photo-assisted metalorganic-vapor-phase epitaxy growth of ZnSe
pp. 382-387(6)
Author: Fujita Y.

Optical and structural properties of high-quality ZnS epitaxial layers grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition
pp. 388-392(5)
Authors: Nakamura S.; Takagimoto S.; Ando T.; Kugimiya H.; Yamada Y.; Taguchi T.

Compensation of nitrogen acceptor in ZnSe:N/ZnSe grown by MOCVD
pp. 393-397(5)
Authors: Wang J.; Miki T.; Omino A.; Park¹ K.S.; Isshiki M.

Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy
pp. 398-403(6)
Authors: Kawahara T.; Ohbuchi Y.; Tabuchi N.; Morimoto J.; Goto H.; Ido T.

Effects of substrate temperature upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE
pp. 404-409(6)
Authors: Hayashida K.; Nishio M.; Harada H.; Furukawa S.; Guo Q.; Ogawa H.

Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs
pp. 410-415(6)
Authors: Prete P.; Lovergine N.; Tapfer L.; Berti M.; Sinha S.K.; Mancini A.M.

ZnMgCdSe structures on InP grown by MOVPE
pp. 416-420(5)
Authors: Straszburg M.; Straszburg M.; Schulz O.; Pohl U.W.; Bimberg D.; Litvinov D.; Gerthsen D.; Schmidbauer M.; Schafer P.

Epitaxial growth of Mg_xZn_1-xS heterostructures by low-pressure MOCVD
pp. 421-424(4)
Authors: Yoshimura K.; Ishizaki S.; Yamada Y.; Taguchi T.

Growth mechanism of selectively grown II-VI semiconductor photonic dots for short-wavelength light emitters
pp. 425-430(6)
Authors: Ueta A.; Shimozawa T.; Avramescu A.; Suemune I.; Machida H.; Shimoyama N.

Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method
pp. 431-434(4)
Authors: Kashiwaba Y.; Katahira F.; Haga K.; Sekiguchi T.; Watanabe H.

Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy
pp. 435-439(5)
Authors: Ashrafi A.A.; Ueta A.; Kumano H.; Suemune I.

Homoepitaxial YBa₂Cu₃O_x films grown on single-crystal YBa₂Cu₃O_x substrates by metalorganic chemical vapor deposition using -diketonates
pp. 440-443(4)
Authors: Zama H.; Tanaka N.; Morishita T.

Novel Sb-based materials for uncooled infrared photodetector applications
pp. 444-449(6)
Authors: Lee J.J.; Razeghi M.

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor
pp. 450-455(6)
Authors: Giesen C.; Szymakowski A.; Rushworth S.; Heuken M.; Heime K.

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
pp. 456-460(5)
Authors: Toivonen J.; Hakkarainen T.; Sopanen M.; Lipsanen H.

Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy
pp. 461-466(6)
Authors: Takahashi M.; Moto A.; Tanaka S.; Tanabe T.; Takagishi S.; Karatani K.; Nakayama M.; Matsuda K.; Saiki T.

Spatial distribution of deep level traps in GaNAs crystals
pp. 467-474(8)
Authors: Tanaka S.; Moto A.; Takahashi M.; Tanabe T.; Takagishi S.

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE
pp. 475-480(6)
Authors: Auvray L.; Dumont H.; Dazord J.; Monteil Y.; Bouix J.; Bru-Chevalier C.

Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs_1-xN_x alloys using spectroscopic ellipsometry
pp. 481-484(4)
Authors: Matsumoto S.; Yaguchi H.; Kashiwase S.; Hashimoto T.; Yoshida S.; Aoki D.; Onabe K.

Hydrogen and carbon incorporation in GaInNAs
pp. 485-490(6)
Authors: Moto A.; Takahashi M.; Takagishi S.

Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure
pp. 491-495(5)
Authors: Kitatani T.; Kondow M.; Tanaka T.

Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050nm
pp. 496-502(7)
Authors: Bugge F.; Zeimer U.; Gramlich S.; Rechenberg I.; Sebastian J.; Erbert G.; Weyers M.

Critical layer thickness of 1.2-m highly strained GaInAs/GaAs quantum wells
pp. 503-508(6)
Authors: Schlenker D.; Miyamoto T.; Chen Z.B.; Kawaguchi M.; Kondo T.; Gouardes E.; Koyama F.; Iga K.

Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy
pp. 509-514(6)
Authors: Sharma T.K.; Arora B.M.; Gokhale M.R.; Rajgopalan S.

Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces
pp. 515-519(5)
Authors: Tanaka T.; Takano K.; Tsuchiya T.; Sakaguchi H.

Rapid high-resolution X-ray diffraction measurement and analysis of MOVPE pHEMT structures using a high-brilliance X-ray source and automatic pattern fitting
pp. 520-524(5)
Authors: Lafford T.; Taylor M.; Wall J.; Loxley N.

MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates
pp. 525-529(5)
Authors: Kim J.; Cho S.; Sanz-Hervas¹ A.; Majerfeld A.; Kim B.W.

Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD
pp. 530-534(5)
Authors: Nishiyama N.; Arai M.; Shinada S.; Miyamoto T.; Koyama F.; Iga K.

Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells
pp. 535-539(5)
Authors: Venkataraghavan R.; Gokhale M.R.; Shah A.P.; Bhattacharya A.; Chandrasekaran K.S.; Arora B.M.

OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires
pp. 540-545(6)
Authors: Lelarge F.; Kaufman D.; Dwir B.; Mautino S.; Rudra A.; Kapon E.

Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy
pp. 546-550(5)
Authors: Suemune I.; Morooka N.; Uesugi K.; Ok Y.-W.; Seong T.-Y.

Origin of disorder in self-ordered GaAs/AlGaAs quantum wires grown by OMVPE on V-grooved substrate
pp. 551-555(5)
Authors: Lelarge F.; Otterburg T.; Oberli D.Y.; Rudra A.; Kapon E.

Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source
pp. 556-560(5)
Authors: Wang X.-L.; Ogura M.

GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
pp. 561-565(5)
Authors: Makino S.; Miyamoto T.; Kageyama T.; Nishiyama N.; Koyama F.; Iga K.

Size control of self-assembled quantum dots
pp. 566-570(5)
Authors: Johansson J.; Seifert W.

Growth of self-assembled Ga_xIn_1-xP quantum islands on GaP
pp. 571-575(5)
Authors: Porsche J.; Scholz F.

Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images
pp. 576-580(5)
Authors: Tachibana K.; Someya T.; Ishida S.; Arakawa Y.

Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots
pp. 581-585(5)
Authors: Sellin R.; Heinrichsdorff¹ F.; Ribbat C.; Grundmann M.; Pohl U.W.; Bimberg D.

Low-index facet formation in InGaAs islands on GaAs (n11)B substrates
pp. 586-591(6)
Authors: Lee J.-S.; Nishi K.; Masumoto Y.

Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques
pp. 592-598(7)
Authors: Steimetz E.; Wehnert T.; Kirmse H.; Poser F.; Zettler J.-T.; Neumann W.; Richter W.

Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy
pp. 599-604(6)
Authors: Koo Hahn C.K.; Motohisa J.; Fukui T.

Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy
pp. 605-610(6)
Authors: Zhou Y.K.; Asahi H.; Asakura J.; Okumura S.; Asami K.; Gonda S.

Thin GaSb insertions and quantum dot formation in GaAs by MOCVD
pp. 611-615(5)
Authors: Muller-Kirsch L.; Pohl U.W.; Heitz R.; Kirmse H.; Neumann W.; Bimberg D.

Performance of multiwafer reactor GaN MOCVD system
pp. 616-621(6)
Authors: Tokunaga H.; Tan H.; Inaishi Y.; Arai T.; Yamaguchi A.; Hidaka J.

Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design
pp. 622-628(7)
Authors: Pawlowski R.P.; Theodoropoulos C.; Salinger A.G.; Mountziaris T.J.; Moffat H.K.; Shadid J.N.; Thrush E.J.

Uniformity control of group-III nitrides grown on 5x3 inch Al₂O₃ substrates inch Planetary Reactors⁽R)
pp. 629-634(6)
Authors: Protzmann H.; Luenenbuerger M.; Bremser M.; Heuken M.; Juergensen H.

A study of cylinder design for solid OMVPE sources
pp. 635-639(5)
Authors: Timmons M.; Rangarajan P.; Stennick R.

Properties of GaN-based laser diodes with a buried-ridge structure
pp. 640-645(6)
Authors: Asatsuma T.; Nakajima H.; Hashimoto S.; Yamaguchi T.; Yoshida H.; Tomiya S.; Asano T.; Hino T.; Ozawa M.; Miyajima T.; Kobayashi T.; Ikeda M.

AlGaInN high-power lasers grown on an ELO-GaN layer
pp. 646-651(6)
Authors: Takeya M.; Yanashima K.; Asano T.; Hino T.; Ikeda S.; Shibuya K.; Kijima S.; Tojyo T.; Ansai S.; Uchida S.; Yabuki Y.; Aoki T.; Asatsuma T.; Ozawa M.; Kobayashi T.; Morita E.; Ikeda M.

High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes
pp. 652-656(5)
Authors: Hosokawa Y.; Nabekura W.; Hoshina T.; Takeuchi R.; Sakaue K.; Udagawa T.

Low threshold current densities in red VCSELs
pp. 657-662(6)
Authors: Butendeich R.; Graef D.; Schwarz J.; Ballmann T.; Schweizer H.; Scholz F.

Optimization of MOVPE growth for 650nm-emitting VCSELs
pp. 663-667(5)
Authors: Bhattacharya¹ A.; Zorn M.; Oster A.; Nasarek M.; Wenzel H.; Sebastian J.; Weyers M.; Trankle G.

InAlGaP microcavity LEDs on Ge-substrates
pp. 668-673(6)
Authors: Modak P.; Delbeke D.; Moerman I.; Baets R.; Van Daele P.; Demeester P.

InP 1.3m microcavity LEDs with high quantum efficiency
pp. 674-678(5)
Authors: Depreter B.; Moerman I.; Baets R.; Van Daele P.; Demeester P.

High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
pp. 679-682(4)
Authors: Lane B.; Razeghi M.

MOVPE growth of lattice-mismatched Al_0.88In_0.12As on GaAs (100) for space solar cell applications
pp. 683-687(5)
Authors: Sinharoy S.; Stan¹ M.A.; Pal A.M.; Weizer V.G.; Smith M.A.; Wilt D.M.; Reinhardt K.

Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application
pp. 688-692(5)
Authors: Imaizumi M.; Adachi M.; Fujii Y.; Hayashi Y.; Soga T.; Jimbo T.; Umeno M.

Polarization-insensitive InGaAsP/InP vertical coupler filter with deep grating by five-step MOVPE growth
pp. 693-698(6)
Authors: Horita M.; Yazaki T.; Tanaka S.; Matsushima Y.

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE
pp. 699-703(5)
Authors: Tawara T.; Yoshida H.; Yogo T.; Tanaka S.; Suemune I.

MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices
pp. 704-712(9)
Authors: Wernersson L.-E.; Borgstrom M.; Gustafson B.; Gustafsson A.; Jarlskog L.; Malm J.-O.; Litwin A.; Samuelson L.; Seifert W.

Metal-organic VPE growth of electron mobility enhanced GaInP/GaInAs pseudomorphic two-dimensional FET structure
pp. 713-716(4)
Authors: Kimura M.; Okano T.; Okuyama M.; Udagawa T.; Azuhata H.; Sawada A.; Takamasu T.

Low tensile strain GaInAs:uid/GaAs:C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer
pp. 717-721(5)
Authors: di Forte-Poisson M.-A.; Bernard S.; Teisseire L.; Brylinski C.; Cassette S.; di Persio J.

InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
pp. 722-729(8)
Authors: Velling P.; Agethen M.; Prost W.; Tegude F.J.

The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
pp. 730-733(4)
Authors: Lambert D.J.H.; Huang J.J.; Shelton B.S.; Wong M.M.; Chowdhury U.; Zhu T.G.; Kwon H.K.; Liliental-Weber Z.; Benarama M.; Feng M.; Dupuis R.D.

Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD
pp. 734-738(5)
Authors: Cheong M.G.; Kim K.S.; Namgung N.W.; Han M.S.; Yang G.M.; Hong C.-H.; Suh E.-K.; Lim K.Y.; Lee H.J.; Yoshikawa A.

Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE
pp. 739-742(4)
Authors: Kasu M.; Kobayashi N.

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy
pp. 743-750(8)
Authors: Koukitu A.; Kumagai Y.; Seki H.

Gas-phase chemistry of metalorganic and nitrogen-bearing compounds
pp. 751-757(7)
Authors: Watwe R.M.; Dumesic J.A.; Kuech T.F.

Detailed thermal boundary conditions in the 3D fluid-dynamic modelling of horizontal MOVPE reactors
pp. 758-764(7)
Authors: Mucciato R.; Lovergine N.

Regional density functional theory for crystal growth in GaN
pp. 765-771(7)
Authors: Nakamura K.; Hayashi T.; Tachibana A.; Matsumoto K.