Publisher: Elsevier

Related content
Volume 220, Number 3, December 2000

< previous issue | all issues | next issue >

Favourites:Add to Favourites

Epitaxial growth of InN films on MgAl2O4 (111) substrates
pp. 185-190(6)
Authors: Tsuchiya, T.; Miki, O.; Shimada, K.; Ohnishi, M.; Wakahara, A.; Yoshida, A.

Favourites:Add to Favourites

Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00.1) substrates
pp. 191-196(6)
Authors: Tsuchiya, T.; Ohnishi, M.; Wakahara, A.; Yoshida, A.

Favourites:Add to Favourites

Initial growth of cubic GaN on Si(001) coated with a thin flat SiC buffer layer
pp. 204-208(5)
Authors: Wang, D.; Hiroyama1, Y.; Tamura, M.; Ichikawa, M.; Yoshida, S.

Favourites:Add to Favourites

MOCVD growth and characterization of ZnS and Zn1-xMgxS alloys
pp. 209-215(7)
Authors: Sallet, V.; Lusson, A.; Rommeluere, M.; Gorochov, O.

Favourites:Add to Favourites

Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
pp. 216-219(4)
Authors: Liu, H.Y.; Wang, X.D.; Wei, Y.Q.; Xu, B.; Ding, D.; Wang, Z.G.

Favourites:Add to Favourites
Favourites:Add to Favourites

SIMS measurements of oxygen impurities in AlGaInP semiconductor material and laser diodes
pp. 226-230(5)
Authors: Najda, S.P.; Kean, A.; Streater, R.W.; SpringThorpe, A.J.

Favourites:Add to Favourites

A chemical solution transport mechanism for one-dimensional growth of CdS nanowires
pp. 231-234(4)
Authors: Zhan, J.H.; Yang, X.G.; Li, S.D.; Wang, D.W.; Xie, Y.; Qian, Y.T.

Favourites:Add to Favourites

Transport effects in the sublimation growth of aluminum nitride
pp. 243-253(11)
Authors: Liu, L.; Edgar, J.H.

Favourites:Add to Favourites

Surface characterization of transparent conductive oxide Al-doped ZnO films
pp. 254-262(9)
Authors: Chen, M.; Pei, Z.L.; Sun, C.; Wen, L.S.; Wang, X.

Favourites:Add to Favourites

Synthesis, growth and assessment of mixed niobate-borate (XYB2O6) compounds
pp. 263-274(12)
Authors: Nicholls, J.F.H.; Henderson, B.; Gallagher, H.G.; Chai, B.H.T.

Favourites:Add to Favourites

Influence of starting melt composition on La3(TaxGa1-x) Ga5O14 crystals grown by Czochralski method
pp. 275-280(6)
Authors: Jung, I.H.; Min Ko, J.; Bo Shim, K.; Fukuda, T.; Ho Auh, K.

Favourites:Add to Favourites

The epitaxial growth of wurtzite ZnO films on LiNbO3 (0001) substrates
pp. 281-285(5)
Authors: Yin, J.; Liu, Z.G.; Liu, H.; Wang, X.S.; Zhu, T.; Liu, J.M.

Favourites:Add to Favourites

The formation process of self-assembled CdSe quantum dots below critical thickness
pp. 286-290(5)
Authors: Yang, Y.; Shen, D.Z.; Zhang, J.Y.; Fan, X.W.; Zhen, Z.H.; Zhao, X.W.; Zhao, D.X.; Liu, Y.N.

Favourites:Add to Favourites

Growth and characterization of TiC nanorods activated by nickel nanoparticles
pp. 296-300(5)
Authors: Liang, C.H.; Meng, G.W.; Chen, W.; Wang, Y.W.; Zhang, L.D.

Favourites:Add to Favourites

Theoretical investigation of crystal growth shaping process with the wetting boundary condition
pp. 301-307(7)
Authors: Tatarchenko, V.A.; Uspenski, V.S.; Tatarchenko, E.V.; Roux, B.

Favourites:Add to Favourites

Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
pp. 308-315(8)
Authors: Ha, S.; Nuhfer, N.T.; Rohrer, G.S.; de Graef, M.; Skowronski, M.

Favourites:Add to Favourites

Axisymmetry breaking instabilities of natural convection in a vertical bridgman growth configuration
pp. 316-325(10)
Authors: Gelfgat1, A.Y.; Bar-Yoseph, P.Z.; Solan, A.

Favourites:Add to Favourites

High-rate deposition of LiNb1-xTaxO3 films by thermal plasma spray CVD
pp. 336-340(5)
Authors: Majima, T.; Yamamoto, H.; Kulinich, S.A.; Terashima, K.

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more