Publisher: Elsevier

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Volume 219, Number 1, 1 October 2000

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Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition
pp. 1-9(9)
Authors: Keckes1, J.; Gerlach, J.W.; Rauschenbach, B.

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Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
pp. 17-21(5)
Authors: Li, Y.F.; Liu, F.Q.; Xu, B.; Ye, X.L.; Ding, D.; Sun, Z.Z.; Jiang, W.H.; Liu, H.Y.; Zhang, Y.C.; Wang, Z.G.

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Chemical inhomogeneities of flux grown rare-earth aluminate RAlO3 (R=La,Gd,Tb,Dy,Ho and Er) crystals
pp. 40-55(16)
Authors: Razdan, A.K.; Bamzai, K.K.; Hangloo, V.; Kotru, P.N.; Wanklyn, B.M.

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Study of single-crystal growth of Tm3+:CaYAlO4 by the floating-zone method
pp. 56-60(5)
Authors: Wang, W.; Yan, X.; Wu, X.; Zhang, Z.; Hu, B.; Zhou, J.

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Crystal growth of Ca1.29Bi0.14VO4
pp. 61-66(6)
Authors: Kim, H.K.; Kim, M.S.; Park, S.M.; Sleight, A.W.

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Growth mechanism of sucrose in pure solutions and in the presence of glucose and fructose
pp. 67-74(8)
Authors: Wang, B.; Krafczyk, S.; Follner, H.

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Determination of growth and dissolution mass rate of boric acid crystals by a simple computer program
pp. 75-82(8)
Authors: Sahin, O.; Ozdemir, M.; Kendirci, H.; Nusret Bulutcu, A.

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Schlieren technique to in situ monitor rapidly-growing KDP crystal surface
pp. 83-90(8)
Authors: Bredikhin, V.I.; Galushkina, G.L.; Kuznetsov, S.P.

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Effect of cationic surfactant on the transformation of octacalcium phosphate
pp. 91-97(7)
Authors: Horvath, L.; Smit, I.; Sikiric, M.; Filipovic-Vincekovic, N.

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Dissolution studies of Zn-containing carbonated hydroxyapatites
pp. 98-101(4)
Authors: Mayer, I.; Featherstone, J.D.B.

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The effect of ordering of internal water in thaumatin and lysozyme crystals as revealed by Raman method
pp. 102-114(13)
Authors: Kudryavtsev, A.B.; Christopher, G.; Smith, C.D.; Mirov, S.B.; Rosenblum, W.M.; deLucas, L.J.

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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate
pp. 115-122(8)
Authors: Hayashi, T.; Ueno, K.; Saiki, K.; Koma, A.

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A Monte Carlo study of dislocation growth and etching of crystals
pp. 165-175(11)
Authors: Cuppen, H.M.; van Veenendaal, E.; van Suchtelen, J.; van Enckevort, W.J.P.; Vlieg, E.

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Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor
pp. 176-179(4)
Authors: Liu, Z.; Atakan, B.; Kohse-Hoinghaus, K.

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Self-assembled InAs quantum wires on InP(001)
pp. 180-183(4)
Authors: Wu, J.; Zeng, Y.P.; Sun, Z.Z.; Lin, F.; Xu, B.; Wang, Z.G.

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