Journal of Crystal Growth

Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition
pp. 1-9(9)
Authors: Keckes¹ J.; Gerlach J.W.; Rauschenbach B.

Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layers on InP substrates
pp. 10-16(7)
Author: Oe K.

Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
pp. 17-21(5)
Authors: Li Y.F.; Liu F.Q.; Xu B.; Ye X.L.; Ding D.; Sun Z.Z.; Jiang W.H.; Liu H.Y.; Zhang Y.C.; Wang Z.G.

Numerical analysis of Cd_1-xZn_xTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique
pp. 22-31(10)
Authors: Xiaohua¹ L.; Wanqi J.; Yaohe Z.

Growth of Pb_1-xSn_xTe (x~0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy
pp. 32-39(8)
Authors: Nugraha; Tamura W.; Itoh O.; Suto K.; Nishizawa J.-i.

Chemical inhomogeneities of flux grown rare-earth aluminate RAlO₃ (R=La,Gd,Tb,Dy,Ho and Er) crystals
pp. 40-55(16)
Authors: Razdan A.K.; Bamzai K.K.; Hangloo V.; Kotru P.N.; Wanklyn B.M.

Study of single-crystal growth of Tm³⁺:CaYAlO₄ by the floating-zone method
pp. 56-60(5)
Authors: Wang W.; Yan X.; Wu X.; Zhang Z.; Hu B.; Zhou J.

Crystal growth of Ca_1.29Bi_0.14VO₄
pp. 61-66(6)
Authors: Kim H.K.; Kim M.S.; Park S.M.; Sleight A.W.

Growth mechanism of sucrose in pure solutions and in the presence of glucose and fructose
pp. 67-74(8)
Authors: Wang B.-G.; Krafczyk S.; Follner H.

Determination of growth and dissolution mass rate of boric acid crystals by a simple computer program
pp. 75-82(8)
Authors: Sahin O.; Ozdemir M.; Kendirci H.; Nusret Bulutcu A.

Schlieren technique to in situ monitor rapidly-growing KDP crystal surface
pp. 83-90(8)
Authors: Bredikhin V.I.; Galushkina G.L.; Kuznetsov S.P.

Effect of cationic surfactant on the transformation of octacalcium phosphate
pp. 91-97(7)
Authors: Horvath L.; Smit I.; Sikiric M.; Filipovic-Vincekovic N.

Dissolution studies of Zn-containing carbonated hydroxyapatites
pp. 98-101(4)
Authors: Mayer I.; Featherstone J.D.B.

The effect of ordering of internal water in thaumatin and lysozyme crystals as revealed by Raman method
pp. 102-114(13)
Authors: Kudryavtsev A.B.; Christopher G.; Smith C.D.; Mirov S.B.; Rosenblum W.M.; DeLucas L.J.

Investigation of the growth mechanism of an InSe epitaxial layer on a MoS₂ substrate
pp. 115-122(8)
Authors: Hayashi T.; Ueno K.; Saiki K.; Koma A.

Three-dimensional simulation of flow and thermal field in a Czochralski melt using a block-structured finite-volume method
pp. 123-143(21)
Authors: Basu¹ B.; Enger S.; Breuer M.; Durst F.

Numerical study of three-dimensional mixed convection due to buoyancy and centrifugal force in an oxide melt for Czochralski growth
pp. 144-164(21)
Authors: Enger S.; Basu¹ B.; Breuer M.; Durst F.

A Monte Carlo study of dislocation growth and etching of crystals
pp. 165-175(11)
Authors: Cuppen H.M.; van Veenendaal E.; van Suchtelen J.; van Enckevort W.J.P.; Vlieg E.

Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor
pp. 176-179(4)
Authors: Liu Z.-J.; Atakan B.; Kohse-Hoinghaus K.

Self-assembled InAs quantum wires on InP(001)
pp. 180-183(4)
Authors: Wu J.; Zeng Y.P.; Sun Z.Z.; Lin F.; Xu B.; Wang Z.G.